Solar cells with efficiencies above 21% processed from Czochralski grown silicon

J. Knobloch, S. Glunz, D. Biro, W. Warta, E. Schaffer, W. Wettling
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引用次数: 64

Abstract

Czochralski-Si (Cz-Si) of several manufacturers and with resistivities ranging from 1 to 13 /spl Omega/cm were processed into solar cells with efficiencies higher than 20% (AM1.5) using the LBSF/PERL processing sequence. The highest efficiency was 21.7%. The investigation of high efficiency Cz-Si solar cells was augmented by computer simulation and a study of the carrier lifetime before and after processing. A small degradation of solar cell performance in the lower resistivity material is discussed. Furthermore, a much simpler processing sequence is presented revealing efficiencies well above 19% on Cz-silicon and 21% on float zone-silicon.
太阳能电池的效率在21%以上,由Czochralski生长的硅加工而成
利用LBSF/PERL处理顺序,将几家制造商的Cz-Si (Cz-Si)电阻率范围从1到13 /spl ω /cm加工成效率高于20% (AM1.5)的太阳能电池。最高效率为21.7%。通过计算机模拟和对处理前后载流子寿命的研究,加强了对高效Cz-Si太阳能电池的研究。讨论了低电阻率材料对太阳能电池性能的影响。此外,提出了一个更简单的处理顺序,显示cz硅的效率远高于19%,浮子区硅的效率高于21%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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