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28th Annual Proceedings on Reliability Physics Symposium最新文献

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Analysis of thin film ferroelectric aging 薄膜铁电时效分析
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66093
D. Fisch, N. Abt, F. Bens, W. Miller, T. Pramanik, W. Saiki, W. Shepherd
{"title":"Analysis of thin film ferroelectric aging","authors":"D. Fisch, N. Abt, F. Bens, W. Miller, T. Pramanik, W. Saiki, W. Shepherd","doi":"10.1109/RELPHY.1990.66093","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66093","url":null,"abstract":"The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132194792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices 薄氧化物MOS器件中漏极雪崩诱导的空穴注入和界面陷阱的产生
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66078
R. Rakkhit, S. Haddad, C. Chang, J. Yue
{"title":"Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices","authors":"R. Rakkhit, S. Haddad, C. Chang, J. Yue","doi":"10.1109/RELPHY.1990.66078","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66078","url":null,"abstract":"Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"45 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134447587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Direct measurement of stress-induced void growth by thermal wave modulated optical reflectance image 利用热波调制光学反射图像直接测量应力引起的空洞生长
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66087
L. W. Smith, C. Welles, A. Bivas, F. Yost, J.E. Campbell
{"title":"Direct measurement of stress-induced void growth by thermal wave modulated optical reflectance image","authors":"L. W. Smith, C. Welles, A. Bivas, F. Yost, J.E. Campbell","doi":"10.1109/RELPHY.1990.66087","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66087","url":null,"abstract":"Thermal wave modulated optical reflectance imaging, for imaging stress-induced voids in metallization, is described. This method nondestructively detects, with submicron resolution, voids within metallization without removal of the stress-originating passivation layers. The width, area, location, and a thickness parameter for each void are measured after heat treatment at 673 K for various times. All voids in a selected field of view are automatically labeled and measured at each time step. This removes the tedium of manually measuring individual voids and greatly increases void growth statistics. These statistics are then compared with a stress-driven diffusive model of void growth. This nondestructive technique has allowed observation of two new stress-void phenomena: a growth process akin to Ostwald ripening and the physical movement and agglomeration of voids.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128996644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
h/sub FE/ instability and 1/f noise in bipolar transistors 双极晶体管的h/sub FE/不稳定性和1/f噪声
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66103
Z. Yiqi, S. Qing
{"title":"h/sub FE/ instability and 1/f noise in bipolar transistors","authors":"Z. Yiqi, S. Qing","doi":"10.1109/RELPHY.1990.66103","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66103","url":null,"abstract":"A series of accelerated life tests, with high-temperature storage and electric ageing, for NPN silicon planar transistors is discussed. It was found that at low current the current gain h/sub FE/ increases with time during the tests, and its drift is correlated with initial measured 1/f noise in the transistors. The correlation coefficient of relative drift Delta h/sub FE//h/sub FE/ and 1/f noise spectral density Si/sub B/(f) is far larger than that of Delta h/sub FE//h/sub FE/ and other initial DC parameters. A quantitative theory for the h/sub FE/ drift which can satisfactorily explain the h/sub FE/ drift characteristics in the tests is discussed. The model proves that h/sub FF/ drift and 1/f noise can be attributed to the same physical origin. Both are caused by the modulation of carrier traps near the Si-SiO/sub 2/ interface leading to Si surface recombination. 1/f noise measurement, therefore, can be used as a fast and nondestructive tool to predict h/sub FE/ instability of bipolar transistors.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123242501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
TEM analysis of failed bits and improvement of data retention properties in megabit-DRAMS 失效位的透射电镜分析及兆位dram数据保留性能的改进
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66098
S. Onishi, A. Ayukawa, K. Tanaka, K. Sakiyama
{"title":"TEM analysis of failed bits and improvement of data retention properties in megabit-DRAMS","authors":"S. Onishi, A. Ayukawa, K. Tanaka, K. Sakiyama","doi":"10.1109/RELPHY.1990.66098","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66098","url":null,"abstract":"Direct observation of failed bits in DRAMs indicates that the dislocation lines originating at the sidewall edge of the cell plate cause data retention errors. The elongated dislocation lines were observed during the annealing treatment after As-implantation. It was found that the failure due to n/sup +/-substrate leakage in the cell increased in proportion to the dislocation density. The failure due to the leakage was greatly decreased by eliminating As-implantation in the regions between the cell plate and the transfer gate. The yields were also improved.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115058019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Correlation of total gate current fluence with PMOS degradation 栅极总电流与PMOS降解的相关性
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66099
G. Reimbold, P. Saint-Bonnet, J. Gautier
{"title":"Correlation of total gate current fluence with PMOS degradation","authors":"G. Reimbold, P. Saint-Bonnet, J. Gautier","doi":"10.1109/RELPHY.1990.66099","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66099","url":null,"abstract":"Systematic measurements of gate current decrease and total gate current fluence performed on buried channel PMOS transistors of different technologies during aging are discussed. Correlations with usual parameter shifts are presented, allowing original investigations of saturation effects and lifetime determination. New opportunities for correlations with Q/sub BD/ measurements and injection on capacitors are opened.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133827753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Discrimination of parasitic bipolar operating modes in ICs with emission microscopy 发射显微镜对集成电路寄生双极工作模式的鉴别
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66066
C. Boit, J. Kolzer, H. Benzinger, A. Dallmann, M. Herzog, J. Qincke
{"title":"Discrimination of parasitic bipolar operating modes in ICs with emission microscopy","authors":"C. Boit, J. Kolzer, H. Benzinger, A. Dallmann, M. Herzog, J. Qincke","doi":"10.1109/RELPHY.1990.66066","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66066","url":null,"abstract":"The characterization of bipolar device operation modes by emission microscopy is discussed. In order to separate different radiation mechanisms, diode and parasitic bipolar n-MOS transistor test structures have been investigated at different temperatures and operating modes. Since it is extremely sensitive to the high energy branch of the radiation, the S25 photocathode of an image intensifier enables a distinction to be made, by means of temperature variation between forward and reverse operation, diffusion, and field current. This measuring technique allows latch-up to be identified as a diffusion-controlled phenomenon.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134633206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Reliability study on polycrystalline silicon thin film resistors used in LSIs under thermal and electrical stress 热应力和电应力作用下lsi用多晶硅薄膜电阻器的可靠性研究
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66100
H. Akimori, N. Owada, T. Taneoka, H. Uda
{"title":"Reliability study on polycrystalline silicon thin film resistors used in LSIs under thermal and electrical stress","authors":"H. Akimori, N. Owada, T. Taneoka, H. Uda","doi":"10.1109/RELPHY.1990.66100","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66100","url":null,"abstract":"A general expression for the sheet resistivity increase of polycrystalline silicon (poly-Si) resistors formed on field oxide under thermal and electrical stress is determined. The increase ratio of the resistivity under thermal stress is proportional to its initial value and square root of aging time with the activation energy of 0.68+or-0.22 eV. The increase ratio of the resistivity under constant DC current is also proportional to the square root of testing time, indicating that this increase is due to the effect of the above-mentioned thermal stress. Carrier trapping center generation is the poly-Si film caused by contact metallization is proposed for this phenomenon.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133758333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric 通过氧化物-氮化物-氧化物(ONO)内插介质的EPROM本征电荷损失模型
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66077
K. Wu, C.-S. Pan, J. Shaw, P. Freiberger, G. Sery
{"title":"A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric","authors":"K. Wu, C.-S. Pan, J. Shaw, P. Freiberger, G. Sery","doi":"10.1109/RELPHY.1990.66077","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66077","url":null,"abstract":"Intrinsic charge loss phenomena of an EPROM cell with an interpoly oxide-nitride-oxide (ONO) stacked film at elevated temperatures are discussed. There are three dominating charge loss mechanisms, which manifest themselves in three distinct phases in time evolution characteristics. The first phase is an initial fast threshold voltage shift which increases with nitride thickness and results from an intrinsic nitride property. The second phase is caused by electrons moving within the nitride. This electron transport follows a linear ohmic-like conduction. The third phase is a long-term charge loss due to electrons leaking through the top oxide. It can be minimized with a thick top oxide. Based on the above observations, a model to describe the intrinsic EPROM charge loss mechanisms is proposed. This model has been useful in developing a novel scaling methodology for an EPROM interpoly ONO films to improve charge retention capability.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116307944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Use of advanced analytical techniques for VLSI failure analysis 使用先进的分析技术进行VLSI故障分析
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66063
I. Banerjee, B. Tracy, P. Davies, B. McDonald
{"title":"Use of advanced analytical techniques for VLSI failure analysis","authors":"I. Banerjee, B. Tracy, P. Davies, B. McDonald","doi":"10.1109/RELPHY.1990.66063","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66063","url":null,"abstract":"Several new applications and techniques in the use of scanning electron microscopy (SEM), transmission electron microscopy (TEM), focused ion beam (FIB) microsurgery, and secondary ion mass spectroscopy (SIMS) for problem solving are presented. These tools, used in new ways, are playing a key role in identifying the sources of defects leading to potential device reliability problems, and are contributing to the elimination of their sources in the process line.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"50 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122215038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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