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28th Annual Proceedings on Reliability Physics Symposium最新文献

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Distribution phenomena of charged defects and neutral electron traps in process-induced radiation-damaged IGFETs with gate insulators grown at 1000 degrees C and 800 degrees C 在1000℃和800℃生长栅绝缘体的过程诱导辐射损伤igfet中带电缺陷和中性电子陷阱的分布现象
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66075
M. Walters, A. Reisman
{"title":"Distribution phenomena of charged defects and neutral electron traps in process-induced radiation-damaged IGFETs with gate insulators grown at 1000 degrees C and 800 degrees C","authors":"M. Walters, A. Reisman","doi":"10.1109/RELPHY.1990.66075","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66075","url":null,"abstract":"Gate oxide defects, in the form of trapped charges and neutral electron traps, were measured before and after irradiation using optically assisted electron injection. Following irradiation and injection, the measured voltage shifts ( Delta V/sub T/) indicate that radiation-induced extrinsic defects are localized near, but not exactly at the Si-SiO/sub 2/ interface. Delta V/sub T/ is found to be linear with respect to the gate oxide thickness when the top electrode resides above the defect region, and quadratic with respect to the thickness when the top electrode encroaches on the defect region. For very thin gate oxides, Delta V/sub T/ approaches zero. Application of a defect distribution model based on this behavior reveals that the gate oxidation temperature does not influence the distribution of radiation-induced defects, but does influence their concentration; with the 800 degrees C oxides always containing more defects than the 1000 degrees C oxides. A gate oxide thickness regime of less than 5-6 nm in which radiation-induced threshold voltage shifts approach zero is identified.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"333 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124691260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal breakdown of VLSI by ESD pulses 用ESD脉冲热击穿VLSI
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66101
D. Lin
{"title":"Thermal breakdown of VLSI by ESD pulses","authors":"D. Lin","doi":"10.1109/RELPHY.1990.66101","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66101","url":null,"abstract":"A three-dimensional thermal model to determine the temperature rise and voltage build-up of VLSI devices stressed by human-body model (HBM) electrostatic discharges (ESD) is discussed. Application of the model to a specific device is yields failure thresholds and failure sites in agreement with the experimental results. This detailed model can be used to evaluate and improve designs of ESD protection circuits. It not only reconfirms the good design principles for ESD protection circuits, but also points out the importance of pulse risetime in determining the failure site. Allowing a wide range in risetime in ESD simulator specifications (such as the 0-10 ns range in MIL-STD Method 3015.6 Notice 7 and the 2-10 ns range in the EOS/ESD Association HBM Standard), may cause ESD pulses of different risetimes within the allowable range to deposit energy to different spots in a device and yield uncorrelatable ESD thresholds.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122932558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Electrical measurements of moisture penetration through passivation 通过钝化对水分渗透的电测量
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66065
C. Shirley, S.C. Maston
{"title":"Electrical measurements of moisture penetration through passivation","authors":"C. Shirley, S.C. Maston","doi":"10.1109/RELPHY.1990.66065","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66065","url":null,"abstract":"The low-frequency (10 KHz) dissipation factor of metal comb/serpentine structures sandwiched between a phosphosilicate glass (PSG) substrate and passivation is a useful electrical indication of moisture penetration through the passivation. Wafer-level dissipation factor readouts after periods of highly accelerated temperature/humidity stress technique (HAST) testing at 159 degrees C and 85% relative humidity were used to monitor the rate of moisture ingression through passivations of various compositions and thicknesses. For plasma-deposited oxynitride films the dominant mechanism is uniform penetration (intrinsic) with a median-time-to-failure of 370 hours (at 159/85). For oxynitride films capped by nitride films, the dominant mechanism is penetration through defects in the nitride film. The defect density of nitride cap films increases with decreasing nitride film thickness.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130094957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
h/sub FE/ instability and 1/f noise in bipolar transistors 双极晶体管的h/sub FE/不稳定性和1/f噪声
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66103
Z. Yiqi, S. Qing
{"title":"h/sub FE/ instability and 1/f noise in bipolar transistors","authors":"Z. Yiqi, S. Qing","doi":"10.1109/RELPHY.1990.66103","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66103","url":null,"abstract":"A series of accelerated life tests, with high-temperature storage and electric ageing, for NPN silicon planar transistors is discussed. It was found that at low current the current gain h/sub FE/ increases with time during the tests, and its drift is correlated with initial measured 1/f noise in the transistors. The correlation coefficient of relative drift Delta h/sub FE//h/sub FE/ and 1/f noise spectral density Si/sub B/(f) is far larger than that of Delta h/sub FE//h/sub FE/ and other initial DC parameters. A quantitative theory for the h/sub FE/ drift which can satisfactorily explain the h/sub FE/ drift characteristics in the tests is discussed. The model proves that h/sub FF/ drift and 1/f noise can be attributed to the same physical origin. Both are caused by the modulation of carrier traps near the Si-SiO/sub 2/ interface leading to Si surface recombination. 1/f noise measurement, therefore, can be used as a fast and nondestructive tool to predict h/sub FE/ instability of bipolar transistors.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123242501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
TEM analysis of failed bits and improvement of data retention properties in megabit-DRAMS 失效位的透射电镜分析及兆位dram数据保留性能的改进
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66098
S. Onishi, A. Ayukawa, K. Tanaka, K. Sakiyama
{"title":"TEM analysis of failed bits and improvement of data retention properties in megabit-DRAMS","authors":"S. Onishi, A. Ayukawa, K. Tanaka, K. Sakiyama","doi":"10.1109/RELPHY.1990.66098","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66098","url":null,"abstract":"Direct observation of failed bits in DRAMs indicates that the dislocation lines originating at the sidewall edge of the cell plate cause data retention errors. The elongated dislocation lines were observed during the annealing treatment after As-implantation. It was found that the failure due to n/sup +/-substrate leakage in the cell increased in proportion to the dislocation density. The failure due to the leakage was greatly decreased by eliminating As-implantation in the regions between the cell plate and the transfer gate. The yields were also improved.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115058019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Correlation of total gate current fluence with PMOS degradation 栅极总电流与PMOS降解的相关性
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66099
G. Reimbold, P. Saint-Bonnet, J. Gautier
{"title":"Correlation of total gate current fluence with PMOS degradation","authors":"G. Reimbold, P. Saint-Bonnet, J. Gautier","doi":"10.1109/RELPHY.1990.66099","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66099","url":null,"abstract":"Systematic measurements of gate current decrease and total gate current fluence performed on buried channel PMOS transistors of different technologies during aging are discussed. Correlations with usual parameter shifts are presented, allowing original investigations of saturation effects and lifetime determination. New opportunities for correlations with Q/sub BD/ measurements and injection on capacitors are opened.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133827753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Discrimination of parasitic bipolar operating modes in ICs with emission microscopy 发射显微镜对集成电路寄生双极工作模式的鉴别
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66066
C. Boit, J. Kolzer, H. Benzinger, A. Dallmann, M. Herzog, J. Qincke
{"title":"Discrimination of parasitic bipolar operating modes in ICs with emission microscopy","authors":"C. Boit, J. Kolzer, H. Benzinger, A. Dallmann, M. Herzog, J. Qincke","doi":"10.1109/RELPHY.1990.66066","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66066","url":null,"abstract":"The characterization of bipolar device operation modes by emission microscopy is discussed. In order to separate different radiation mechanisms, diode and parasitic bipolar n-MOS transistor test structures have been investigated at different temperatures and operating modes. Since it is extremely sensitive to the high energy branch of the radiation, the S25 photocathode of an image intensifier enables a distinction to be made, by means of temperature variation between forward and reverse operation, diffusion, and field current. This measuring technique allows latch-up to be identified as a diffusion-controlled phenomenon.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134633206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Reliability study on polycrystalline silicon thin film resistors used in LSIs under thermal and electrical stress 热应力和电应力作用下lsi用多晶硅薄膜电阻器的可靠性研究
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66100
H. Akimori, N. Owada, T. Taneoka, H. Uda
{"title":"Reliability study on polycrystalline silicon thin film resistors used in LSIs under thermal and electrical stress","authors":"H. Akimori, N. Owada, T. Taneoka, H. Uda","doi":"10.1109/RELPHY.1990.66100","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66100","url":null,"abstract":"A general expression for the sheet resistivity increase of polycrystalline silicon (poly-Si) resistors formed on field oxide under thermal and electrical stress is determined. The increase ratio of the resistivity under thermal stress is proportional to its initial value and square root of aging time with the activation energy of 0.68+or-0.22 eV. The increase ratio of the resistivity under constant DC current is also proportional to the square root of testing time, indicating that this increase is due to the effect of the above-mentioned thermal stress. Carrier trapping center generation is the poly-Si film caused by contact metallization is proposed for this phenomenon.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133758333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric 通过氧化物-氮化物-氧化物(ONO)内插介质的EPROM本征电荷损失模型
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66077
K. Wu, C.-S. Pan, J. Shaw, P. Freiberger, G. Sery
{"title":"A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric","authors":"K. Wu, C.-S. Pan, J. Shaw, P. Freiberger, G. Sery","doi":"10.1109/RELPHY.1990.66077","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66077","url":null,"abstract":"Intrinsic charge loss phenomena of an EPROM cell with an interpoly oxide-nitride-oxide (ONO) stacked film at elevated temperatures are discussed. There are three dominating charge loss mechanisms, which manifest themselves in three distinct phases in time evolution characteristics. The first phase is an initial fast threshold voltage shift which increases with nitride thickness and results from an intrinsic nitride property. The second phase is caused by electrons moving within the nitride. This electron transport follows a linear ohmic-like conduction. The third phase is a long-term charge loss due to electrons leaking through the top oxide. It can be minimized with a thick top oxide. Based on the above observations, a model to describe the intrinsic EPROM charge loss mechanisms is proposed. This model has been useful in developing a novel scaling methodology for an EPROM interpoly ONO films to improve charge retention capability.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116307944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Use of advanced analytical techniques for VLSI failure analysis 使用先进的分析技术进行VLSI故障分析
28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI: 10.1109/RELPHY.1990.66063
I. Banerjee, B. Tracy, P. Davies, B. McDonald
{"title":"Use of advanced analytical techniques for VLSI failure analysis","authors":"I. Banerjee, B. Tracy, P. Davies, B. McDonald","doi":"10.1109/RELPHY.1990.66063","DOIUrl":"https://doi.org/10.1109/RELPHY.1990.66063","url":null,"abstract":"Several new applications and techniques in the use of scanning electron microscopy (SEM), transmission electron microscopy (TEM), focused ion beam (FIB) microsurgery, and secondary ion mass spectroscopy (SIMS) for problem solving are presented. These tools, used in new ways, are playing a key role in identifying the sources of defects leading to potential device reliability problems, and are contributing to the elimination of their sources in the process line.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"50 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122215038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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