栅极总电流与PMOS降解的相关性

28th Annual Proceedings on Reliability Physics Symposium Pub Date : 1990-03-27 DOI:10.1109/RELPHY.1990.66099

G. Reimbold, P. Saint-Bonnet, J. Gautier

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引用次数: 3

摘要

讨论了不同工艺的埋地沟道PMOS晶体管老化过程中栅极电流减小和总栅极电流影响的系统测量。提出了与通常参数移位的相关性，允许对饱和度影响和寿命确定进行原始调查。打开了与Q/sub / BD/测量和电容器注入相关的新机会。

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Correlation of total gate current fluence with PMOS degradation

Systematic measurements of gate current decrease and total gate current fluence performed on buried channel PMOS transistors of different technologies during aging are discussed. Correlations with usual parameter shifts are presented, allowing original investigations of saturation effects and lifetime determination. New opportunities for correlations with Q/sub BD/ measurements and injection on capacitors are opened.<>

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28th Annual Proceedings on Reliability Physics Symposium

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