Use of advanced analytical techniques for VLSI failure analysis

Abstract

Several new applications and techniques in the use of scanning electron microscopy (SEM), transmission electron microscopy (TEM), focused ion beam (FIB) microsurgery, and secondary ion mass spectroscopy (SIMS) for problem solving are presented. These tools, used in new ways, are playing a key role in identifying the sources of defects leading to potential device reliability problems, and are contributing to the elimination of their sources in the process line.<>