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Magnetodiode equivalent circuits for simulation of magnetic field sensors 模拟磁场传感器的磁二极管等效电路
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517139
Z. Hotra, R. Holyaka, M. Hladun
{"title":"Magnetodiode equivalent circuits for simulation of magnetic field sensors","authors":"Z. Hotra, R. Holyaka, M. Hladun","doi":"10.1117/12.517139","DOIUrl":"https://doi.org/10.1117/12.517139","url":null,"abstract":"The models for magnetic field sensors in SPICE software for circuit simulation are considered in this paper. The new approach for synthesis of magnetodiode equivalent circuits is presented. It is shown that using combination of physical and empirical models it is possible to maintain effective analysis of sensors in specialized software for circuit simulation.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114489467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable semiconductor laser application for interferometric optical fiber sensors 可调谐半导体激光器在干涉式光纤传感器中的应用
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517051
P. Wierzba, R. Hypszer, J. Plucinski
{"title":"Tunable semiconductor laser application for interferometric optical fiber sensors","authors":"P. Wierzba, R. Hypszer, J. Plucinski","doi":"10.1117/12.517051","DOIUrl":"https://doi.org/10.1117/12.517051","url":null,"abstract":"Methods of operating point stabilization of interferometric sensors using tunable lasers are presented. These methods employ circuits which control the wavelength of an external cavity tunable semiconductor laser. Modes of operation of the control circuits and problems related to their design are discussed. The limitations restricting the use of discussed control circuit types are analyzed. An interferometric force sensor was built and tested. Results of measurements carried out using the sensor are presented.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116048726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sol-gel derived planar waveguides for sensor applications 用于传感器的溶胶-凝胶衍生平面波导
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517054
P. Karasiński, I. Zielonka
{"title":"Sol-gel derived planar waveguides for sensor applications","authors":"P. Karasiński, I. Zielonka","doi":"10.1117/12.517054","DOIUrl":"https://doi.org/10.1117/12.517054","url":null,"abstract":"The paper presents investigation results on the application of sol-gel technology for the production of planar waveguides. These waveguides are produced in a two-component system SiO2:TiO2. We discussed application potentials of the produced layers and presented the results of theoretical analysis involving future structures.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124283239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of polymer humidity sensor based on polyethyleneimine 聚乙烯亚胺聚合物湿度传感器的电性能研究
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517102
Teresa Zajt, G. Jasinski, B. Chachulski
{"title":"Electrical properties of polymer humidity sensor based on polyethyleneimine","authors":"Teresa Zajt, G. Jasinski, B. Chachulski","doi":"10.1117/12.517102","DOIUrl":"https://doi.org/10.1117/12.517102","url":null,"abstract":"In the paper the amperometric properties of polymer humidity sensor based on polythyleneimine are presented. Usually properties of this sensor are examined by means of impedance spectroscopy. The new approach is proposed. It is shown that the current flow in the investigated sensor is a result of the electrode reaction at the anode. The quasi-static diffusion current is a linear function (in the log-lin scale) of relative humidity, so this sensor can be used as an amperometric. An equivalent circuit, containing the elements representing diffusion effect, has been proposed. The shape of impedance plots show diffusion related process.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122173360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Smart sensors wireless measurement network based on Bluetooth standard 基于蓝牙标准的智能传感器无线测量网络
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517135
J. Weremczuk, R. Jachowicz, M. Jablonski
{"title":"Smart sensors wireless measurement network based on Bluetooth standard","authors":"J. Weremczuk, R. Jachowicz, M. Jablonski","doi":"10.1117/12.517135","DOIUrl":"https://doi.org/10.1117/12.517135","url":null,"abstract":"The paper briefly describes Bluetooth standard and authors’ Bluetoth sensors modules construction. At the beginning the short comparison of existing on the market standards of wireless data transmission (IEEE802.11, IEEE802.11b/g, IEEE802.11a, HomeRF, Bluetooth, Radiometrix, Motorola, IrDA) brought out by main firms is presented. Next selected Bluetooth features and functions useful to sensors wireless network creations are discussed. At the end our own Bluetooth sensor based on the newest Ericsson ROK 101 007 module is specified.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117163309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Remotely microwave-enhanced wet anisotropic etching of monocrystalline silicon utilizing a memory effect of microwave activation of KOH 利用微波活化KOH的记忆效应，微波增强单晶硅湿法各向异性刻蚀
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517062
R. Walczak, J. Dziuban
{"title":"Remotely microwave-enhanced wet anisotropic etching of monocrystalline silicon utilizing a memory effect of microwave activation of KOH","authors":"R. Walczak, J. Dziuban","doi":"10.1117/12.517062","DOIUrl":"https://doi.org/10.1117/12.517062","url":null,"abstract":"A new microwave enhanced anisotropic wet method of etching of silicon (External Etching Microwave Silicon - E2Msi), has been presented. In the method an etchant is irradiated by microwave and then flows to an external reaction chamber where etching is performed. The reaction chamber is situated outside of area of microwave irradiation. The main characteristics of E2Msi etching has been presented. It has been shown that the new process utilizes a memory effect of high chemical reactivity observed in water and water-based solution irradiated by microwave.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115170740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigations of temperature and strain properties of fiber Bragg grating for dislocation sensors 位错传感器用光纤布拉格光栅的温度和应变特性研究
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517049
M. Szustakowski, N. Pałka, T. Karwowski, W. Ciurapinski
{"title":"Investigations of temperature and strain properties of fiber Bragg grating for dislocation sensors","authors":"M. Szustakowski, N. Pałka, T. Karwowski, W. Ciurapinski","doi":"10.1117/12.517049","DOIUrl":"https://doi.org/10.1117/12.517049","url":null,"abstract":"The paper presents a theoretical analysis and investigation on temperature and strain sensitivity of Fiber Bragg gratings verified in a laboratory setup. On these ground studies, researches of Fiber Bragg Grating Dislocation Sensor were conducted. Differences between real and measured strain at a constant temperature are depicted.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129749136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The analysis of ion-selective field-effect transistor operation in chemical sensors 离子选择性场效应晶体管在化学传感器中的工作分析
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517063
Z. Hotra, R. Holyaka, M. Hladun, Iryna Humenuk
{"title":"The analysis of ion-selective field-effect transistor operation in chemical sensors","authors":"Z. Hotra, R. Holyaka, M. Hladun, Iryna Humenuk","doi":"10.1117/12.517063","DOIUrl":"https://doi.org/10.1117/12.517063","url":null,"abstract":"In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121517856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microfluidic detectors for μ-TAS μ-TAS微流控检测器
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517115
A. Gorecka-Drzazga, J. Dziuban, S. Bargiel
{"title":"Microfluidic detectors for μ-TAS","authors":"A. Gorecka-Drzazga, J. Dziuban, S. Bargiel","doi":"10.1117/12.517115","DOIUrl":"https://doi.org/10.1117/12.517115","url":null,"abstract":"Microfluidic detectors have been designed for μ-TAS application. Micromechanical, integrated silicon-glass nanolitres range conductivity and fluorescence detectors have been presented. The construction, technology, and basic characteristics have been discussed for the first time in Poland.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121706270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon thermal conductivity detector (TCD) with the Pt resistors 硅导热探测器(TCD)与铂电阻
Optoelectronic and Electronic Sensors Pub Date : 2003-09-19 DOI: 10.1117/12.517125
J. Lysko, M. Górska, H. Wrzesinska, K. Hejduk, B. Latecki, Joanna Lozinko
{"title":"Silicon thermal conductivity detector (TCD) with the Pt resistors","authors":"J. Lysko, M. Górska, H. Wrzesinska, K. Hejduk, B. Latecki, Joanna Lozinko","doi":"10.1117/12.517125","DOIUrl":"https://doi.org/10.1117/12.517125","url":null,"abstract":"Pt resistors formation technology for the thermal conductivity detector (TCD) is presented. Channels for the gas flow were milled in the glass plate and etched in the silicon chip with use of the TMAH+ water solution. Resistors made up of the thin Pt layer, were located across the channels on the silicon chips. They were connected through the contract windows in the Si3N4 and SiO2 layers, with the n+-type regions of the p-type, (100) silicon substrate substrate. BSC-type contacts to the bonding pads allowed electrical contact to the bonding pads located on the opposite side of the silicon substrate. Resistors were electrically tested as a detector heaters and thermoresistors.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"344 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122033504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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