{"title":"离子选择性场效应晶体管在化学传感器中的工作分析","authors":"Z. Hotra, R. Holyaka, M. Hladun, Iryna Humenuk","doi":"10.1117/12.517063","DOIUrl":null,"url":null,"abstract":"In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The analysis of ion-selective field-effect transistor operation in chemical sensors\",\"authors\":\"Z. Hotra, R. Holyaka, M. Hladun, Iryna Humenuk\",\"doi\":\"10.1117/12.517063\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.\",\"PeriodicalId\":405495,\"journal\":{\"name\":\"Optoelectronic and Electronic Sensors\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optoelectronic and Electronic Sensors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.517063\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optoelectronic and Electronic Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.517063","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The analysis of ion-selective field-effect transistor operation in chemical sensors
In this paper we present the research results of influence of substrate potential in ion-selective field-effect transistors (ISFET) on output signal of chemical sensors, e.g. PH-meters. It is shown that the instability of substrate-source p-n junction bias in well-known chemical sensors, which use grounded reference electrode - ISFET gate, affect on sensor characteristics in negative way. The analytical description and research results of 'substrate effect' on ISFET characteristics are considered.
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