Remotely microwave-enhanced wet anisotropic etching of monocrystalline silicon utilizing a memory effect of microwave activation of KOH

Abstract

A new microwave enhanced anisotropic wet method of etching of silicon (External Etching Microwave Silicon - E2Msi), has been presented. In the method an etchant is irradiated by microwave and then flows to an external reaction chamber where etching is performed. The reaction chamber is situated outside of area of microwave irradiation. The main characteristics of E2Msi etching has been presented. It has been shown that the new process utilizes a memory effect of high chemical reactivity observed in water and water-based solution irradiated by microwave.