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Fluorescence measurements for chemical optical fiber sensor of cobalt 钴化学光纤传感器的荧光测量
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721106
A. Mazikowski, Emil Kaczmarek
{"title":"Fluorescence measurements for chemical optical fiber sensor of cobalt","authors":"A. Mazikowski, Emil Kaczmarek","doi":"10.1117/12.721106","DOIUrl":"https://doi.org/10.1117/12.721106","url":null,"abstract":"Opto-chemical sensors are sensors of quantities (pH level, heavy metal ions concentration), detection of which can be performed optically. These sensors utilize various optical phenomena such as changes of fluorescence in the presence of a certain agent. Many substances available and interesting from the sensor point of view exhibit different properties in solution and after physical and/or chemical mounting on glass slide or optical fiber. Because of this it is necessary to investigate application possibilities of a certain substance in well defined metrological environment. In this paper we described system for measuring fluorescence of sensing materials. We proposed system utilizing emission and absorption spectra separation and phase-sensitive detection. As an example of such system a fluorescence sensor of cobalt was of our interest. We described sample preparation process and measured some properties of chosen chemical substances. Achieved results are the basis for further research.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124894077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of polarimetric sensors using LabVIEW environment 利用LabVIEW环境对偏振传感器进行建模
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721107
P. Wierzba, A. Mazikowski
{"title":"Modeling of polarimetric sensors using LabVIEW environment","authors":"P. Wierzba, A. Mazikowski","doi":"10.1117/12.721107","DOIUrl":"https://doi.org/10.1117/12.721107","url":null,"abstract":"An application for modeling of polarimetric sensors is presented. Written using industry-standard LabVIEW platform, this application calculates response of a non-ideal sensor using a monochromatic source to force acting on the modulator. Problems existing when creating a modeling application in a graphic programming environment are discussed. Selected results of optical fiber sensors modeling are presented.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130422714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measuring system for the investigation upon surface distribution of pyroelectric charge 研究热释电电荷表面分布的测量系统
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721030
M. Trybus, W. Proszak
{"title":"Measuring system for the investigation upon surface distribution of pyroelectric charge","authors":"M. Trybus, W. Proszak","doi":"10.1117/12.721030","DOIUrl":"https://doi.org/10.1117/12.721030","url":null,"abstract":"Results of design and construction works upon measuring system for surface distribution of pyroelectric charge, in the process of phase transition of TGS-like ferroelectrics, are presented in this paper. Measurements of pyroelectric current for one channel as well as calibration of characteristics for the whole system and measurement results for TGSTe single crystal are also presented.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133332668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
M(O)EMS-based integrated micro-interferometric system 基于M(O) ems的集成微干涉测量系统
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721029
J. Krężel, L. Salbut, M. Kujawińska
{"title":"M(O)EMS-based integrated micro-interferometric system","authors":"J. Krężel, L. Salbut, M. Kujawińska","doi":"10.1117/12.721029","DOIUrl":"https://doi.org/10.1117/12.721029","url":null,"abstract":"In the paper idea of integrated waveguide micro-interferometric system is presented. Results of numerical simulation of beam propagation (geometrical and wave depiction) in the measurement interferometric module is presented. Article also briefly presents laboratory setups, which are used to model the interferometers.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134153752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Automatic system for determination of dielectric hysteresis loop parameters 电介质迟滞回路参数自动测定系统
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721112
W. Proszak
{"title":"Automatic system for determination of dielectric hysteresis loop parameters","authors":"W. Proszak","doi":"10.1117/12.721112","DOIUrl":"https://doi.org/10.1117/12.721112","url":null,"abstract":"Research works were focused on design and implementation of based on Sawyer-Tower measurement set, computer system, capable to record parameters of dielectric hysteresis loop of non-linear dielectrics. This measurement system makes possible automation and simplification of measurements process and preliminary data processing. Exemplary measurements of temperature characteristics of coercive field and spontaneous polarization of ferroelectric single crystals are also presented in the paper.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126265189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application of proton-conducting SrCeO3 for construction of potentiometric hydrogen gas sensor 质子导电SrCeO3在构建电位式氢气传感器中的应用
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721037
P. Pasierb, Anna Biernacka-Such, S. Komornicki, M. Rȩkas
{"title":"Application of proton-conducting SrCeO3 for construction of potentiometric hydrogen gas sensor","authors":"P. Pasierb, Anna Biernacka-Such, S. Komornicki, M. Rȩkas","doi":"10.1117/12.721037","DOIUrl":"https://doi.org/10.1117/12.721037","url":null,"abstract":"The purpose of this work was to investigate the performance and working mechanism of potentiometric hydrogen sensors, based on proton-conducting oxide solid electrolytes. The SrCe1-xYxO3-y compounds (0≤×≤0.2) were prepared by solid-state reaction method; different concentrations of yttrium dopant (x) were used. The measurements of Open Cell Voltage (OCV) of constructed cells-sensors as a function of gas concentration and temperature were performed. Studied sensors exhibited short response and recovery times and satisfactory repeatability of the sensor signal. The discussion of the working mechanism within the frame of defect structure and transport properties of proton-conducting solid electrolyte was also presented in this work.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116957100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Magnetic tunnel junctions and their applications 磁隧道结及其应用
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721113
T. Stobiecki
{"title":"Magnetic tunnel junctions and their applications","authors":"T. Stobiecki","doi":"10.1117/12.721113","DOIUrl":"https://doi.org/10.1117/12.721113","url":null,"abstract":"Magnetic tunnel junction (MTJ) consists of at least two ferromagnetic layers, separated by an insulating tunnel barrier of amorphous aluminum oxide Al-O or monocrystalline (100)MgO. The magnetization direction of the free ferromagnetic layer (top electrode) is used for information storage. The tunnel resistance of the memory bit cell is either low or high, depending on the relative orientation of magnetizations (parallel or antiparallel) of the free layer with respect to the fixed layer (bottom electrode). The sense current flows perpendicular to the film plane of MTJ for the random access memory (MRAM) cell or reprogrammable magnetic logic (RML) system. The MRAM or RML bit cell is programmed by the magnetic field, generated by current flowing through conductors.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117299350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modified structures of multicrystalline silicon as light detectors 多晶硅光探测器的修饰结构
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721039
B. Swatowska, T. Stapiński, Z. Sobków
{"title":"Modified structures of multicrystalline silicon as light detectors","authors":"B. Swatowska, T. Stapiński, Z. Sobków","doi":"10.1117/12.721039","DOIUrl":"https://doi.org/10.1117/12.721039","url":null,"abstract":"Photovoltaic structures of multicrystalline silicon were modified by the deposition of a-Si:C:H thin films. The films have been deposited by Plasma Enhanced Chemical Vapor Deposition at 13.56 MHz in SiH4 +CH4 gaseous mixtures. The structures have been investigated by means of optical and electrical methods. Spectral photosensitivity measurements were done at room temperature in voltage and current modes. The signal was registered in the function of light in the visible and near infrared region from 400 to 1100 nm. Silicon structures covered by a-Si:C:H have higher spectral photosensitivities than uncover ones and the apparent increase in efficiency has been observed.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130891089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rapid temperature processing (RTP) system for selenization of photovoltaic materials 光伏材料硒化的快速温度处理(RTP)系统
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721040
M. Warzecha, H. Jankowski, L. Maksymowicz, T. Pisarkiewicz, C. Worek
{"title":"Rapid temperature processing (RTP) system for selenization of photovoltaic materials","authors":"M. Warzecha, H. Jankowski, L. Maksymowicz, T. Pisarkiewicz, C. Worek","doi":"10.1117/12.721040","DOIUrl":"https://doi.org/10.1117/12.721040","url":null,"abstract":"Rapid Temperature Processing (RTP) methodology is widely applied in thin-film photovoltaic materials technology due to high quality of fabricated cells and also perspectives for their mass manufacturing. This paper describes a RTP device structure which contains the graphite reactor for selenization of Cu/In or Cu/In/Se precursors. Strong nonlinearity of radiative energy transfer makes RTP controlling difficult so it still needs to be improved. Using mathematical model of the device, we are proposing the method of process controlling. Experimentally obtained temperature profiles of Rapid Temperature Processes are presented and compared with temperature profile of typical CIS selenization graphite reactor. Presented steering procedure, based on our model, gives improves by decreasing time needed for selenization and simultaneously reducing costs of the process.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130699305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transillumination of peripheral parts of the body with the use of optical radiation 透光术利用光辐射对身体周围部位进行透光照射
Optoelectronic and Electronic Sensors Pub Date : 2006-10-30 DOI: 10.1117/12.721027
G. Wiczyński
{"title":"Transillumination of peripheral parts of the body with the use of optical radiation","authors":"G. Wiczyński","doi":"10.1117/12.721027","DOIUrl":"https://doi.org/10.1117/12.721027","url":null,"abstract":"In the paper a result of hand fingers transillumination is presented. During experiments, an robot arm equipped with an optoelectronic system has been used. The object scanning was realized in the rectangular coordinates system. Optical radiation at the wavelength 880 nm was emitted by a high power LED to be supplied in pulse mode while a photodiode PIN was used as the photodetector. Both light source and photodetector were set into the special diaphragms in order to collect all ballistic photons. The signals obtained from the photodiode allowed determining the object optical attenuation occuring in particualr sites of the transilluminated surface in a form of two-dimensional image. Also selected examples of current modern transillumination applications in medical diagnostics are presented.","PeriodicalId":405495,"journal":{"name":"Optoelectronic and Electronic Sensors","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123962494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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