Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)最新文献

{"title":"Ultrathin body germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III–V substrates","authors":"Yunjun Xiao, Rui Zhang, Jian Kang, T. Osada, M. Hata, M. Takenaka, S. Takagi","doi":"10.1149/2.0031502SSL","DOIUrl":"https://doi.org/10.1149/2.0031502SSL","url":null,"abstract":"We report the first demonstration of thin body GeOI MOSFETs fabricated by a novel GeOI fabrication process based on epitaxial Ge grown on III-V compound semiconductor wafers. Normal operation of n- and p-MOSFET is confirmed for GeOI with thickness of 55 to 15 nm. The ION/IOFF ratio at room temperature is about 104 and the peak effective hole and electron mobility of 122 and 235 cm2/Vs, respectively, have been obtained for 15-nm-thick-GeOI n- and p-MOSFETs.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124380999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electroceuticals - replacing drugs by devices enabled through advanced VLSI technologies","authors":"D. Prutchi","doi":"10.1109/vlsi-dat.2014.6834929","DOIUrl":"https://doi.org/10.1109/vlsi-dat.2014.6834929","url":null,"abstract":"Summary form only given. Electroceuticals are medical devices that employ electrical currents to affect and modify body functions as an alternative to drug-based interventions. In contrast to pacemakers and other classical excitable-tissue stimulators, modern electroceuticals employ sophisticated control strategies that go beyond simple stimulation-response mechanisms in order to modulate physiological regulation loops. Examples include modulation of cardiac contractility as a therapy for heart failure, modulation of gastric contractility as a therapy for diabetes, and modulation of vagus nerve traffic as a therapy for epilepsy and inflammatory diseases. Electroceutical research is still in its early stages, and thus represents an enormous opportunity for which advanced VLSI technologies can enable the development of novel devices and therapies. Unlike other commercial devices however, developing microsystems for therapeutic applications takes place in a heavily regulated environment which requires decisive proof of the devices' safety and efficacy. Costs, schedules, and clinical strategies must be planned accordingly to achieve success. This keynote lecture will focus on the opportunities and challenges presented by this exciting new field in healthcare.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"222 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113949209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Scaling trends and challenges of advanced memory technology","authors":"Seok-Hee Lee","doi":"10.1109/VLSI-DAT.2014.6834928","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2014.6834928","url":null,"abstract":"Summary form only given. DRAM and NAND technologies have been successfully developed so far thanks to advanced patterning and device technologies, meeting high density, high performance and low cost requirements. However, imminent scaling limit in DRAM and NAND requires breakthrough technologies to meet market needs. DRAM technology in 1xnm and beyond faces severe challenges, such as difficulties in obtaining sufficient storage capacitance and sensing margin. To alleviate the problems, new materials for cell capacitor should be exploited and systematic aids such as error correction should be considered. Besides these scaling issues, DRAM has been suffering from performance issue, and it requires enhanced peripheral transistor performance with low power and high speed by using new process technologies such as HKMG. A 3D integration with TSV provides a new solution for high density, high speed, low power, and wider bandwidth without traditional device geometric scaling. However, 3D has its own challenges such as high manufacturing cost and reliability that need to be overcome before it could be widely used. 3D NAND flash memory technologies have been studied as a strong contender due to their potential for replacing conventional 2D floating gate cell. Recently, there has been remarkable progresses towards mass production even though their inherent issues of poor data retention and process complexity. Several challenges such as process, material, and cell architecture will be discussed. New non-volatile memories such as ReRAM, PRAM and STT-MRAM have undergone explosive study in the past decade. ReRAM and PRAM are now leading candidates to replace conventional NAND or NOR flash memories and to pioneer the field of Storage Class Memories, while STT-MRAM is regarded as the only a non-volatile memory that can have the performance of DRAM due to its high-speed read/write and excellent cycling endurance. Device characteristics of new non-volatile memories, key technology of device integration and materials will be discussed.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125980788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dark Silicon - A thermal perspective","authors":"J. Henkel","doi":"10.1109/vlsi-tsa.2014.6839641","DOIUrl":"https://doi.org/10.1109/vlsi-tsa.2014.6839641","url":null,"abstract":"Summary form only given. Dark Silicon is predicted to dominate the chip footage of upcoming many-core systems within a decade since Dennard Scaling fails mainly due to the voltage-scaling problem that results in higher power densities. It would deem upcoming technologies nodes inefficient since a majority of cores would lie fallow. International research efforts have recently started to investigate and mitigate Dark Silicon effects to ensure an effective use of available chip footage. The talk starts with an overview of state-of-the-art in Dark Silicon research and how it is driven by thermal constraints. Besides background on thermal issues and its impact on reliability, effective solutions are presented that scale especially with respect to many-core systems.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128589297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Trends and directions in networking - impact of virtualization and cloud","authors":"Atul Tambe","doi":"10.1109/vlsi-dat.2014.6834927","DOIUrl":"https://doi.org/10.1109/vlsi-dat.2014.6834927","url":null,"abstract":"Summary form only given. With the rise of virtualization and cloud computing, traditional networking models do not scale. Software-Defined Networking (SDN) has been labeled a game-changing technology in the data center and is gaining market share in enterprise and service provider environments. In this talk, I will discuss why there is so much interest in SDN, and present different approaches to SDN, ranging from overlay virtual networks, to network switches that can be controlled by an external controller, to new forwarding engines that can better reflect the requirements of applications. We will look at the impact of emerging open source bodies such as OpenStack, OpenDaylight and Open Compute on networking and how companies such as IBM are building full-fledged Software Defined Environments for cloud deployments based on SDN. The talk will also cover the impact of these changes on semiconductor solutions.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124740238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Will reliability limit Moore's law?","authors":"A. Oates","doi":"10.1109/VLSI-DAT.2014.6834930","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2014.6834930","url":null,"abstract":"Summary form only given. Moore's law continues to the engine of growth for the global electronics industry. The understanding of IC degradation mechanisms has resulted in rapid reliability improvements that have enabled the rapid rate technology progression we have experienced. Going forward it is clear that the reliability margins the industry has enjoyed in the past will shrink. The question is now whether reliability will pose a constraint on Moore's law. In this talk we will discuss reliability issues that can most directly impact the industry's capability to maintain the pace of technology progression required by Moore's law.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128027125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Internet of Things: Connecting the physical and digital worlds","authors":"Dipesh Patel","doi":"10.1109/VLSI-DAT.2014.6834925","DOIUrl":"https://doi.org/10.1109/VLSI-DAT.2014.6834925","url":null,"abstract":"Summary form only given. The Internet of Things (IoT) is a trend and not a single sector or market. The most common view is of IoT as a collection of smart, sensor-enabled physical objects, and the networks, servers and services that interact with them. Chip/System designers have to consider many challenges from implementation of sensors chips including, embedded microprocessors through to connectivity via wired or wireless networks that enable these objects to sense autonomously their environment, communicate with other objects, and interact with Internet based services and cloud based applications.","PeriodicalId":403085,"journal":{"name":"Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125282724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}