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8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)最新文献

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Design of a 50 Gbit/s InP/InGaAs HBT master-slave D-type flip-flop 50gbit /s InP/InGaAs HBT主从d型触发器的设计
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919041
A. Kasbari, P. Andre, S. Blayac, M. Riet, A. Konczykowska, H. Ouslimani, J. Godin
{"title":"Design of a 50 Gbit/s InP/InGaAs HBT master-slave D-type flip-flop","authors":"A. Kasbari, P. Andre, S. Blayac, M. Riet, A. Konczykowska, H. Ouslimani, J. Godin","doi":"10.1109/EDMO.2000.919041","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919041","url":null,"abstract":"The design of a 50 Gbit/s master-slave D-type flip-flop for ETDM transmission system is presented. The chip is fabricated in an InP/InGaAs DHBT self-aligned technology with typical Ft and Fmax of about 160 GHz and 210 GHz respectively. We show how our design benefits at best from the available technology. The switching of the transistors is optimised as well as the sizing of basic blocks like emitter-followers or current switches. At this operating frequency, the layout step imposes to take into account propagation phenomena and interconnection parasitic elements, which necessarily degrade the performances. Appropriate methods are systematically applied to evaluate and reduce these effects.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"31 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133783264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-noise device and circuit characterization at cryogenic temperatures for high sensitivity microwave receivers 低温下高灵敏度微波接收机的低噪声器件和电路特性
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919036
A. Caddemi, N. Donato, M. Sannino
{"title":"Low-noise device and circuit characterization at cryogenic temperatures for high sensitivity microwave receivers","authors":"A. Caddemi, N. Donato, M. Sannino","doi":"10.1109/EDMO.2000.919036","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919036","url":null,"abstract":"The present paper focuses on the small-signal and noise characterization of microwave transistors and circuits at temperatures ranging from 290 to 90 K, in the 6-18 GHz frequency band. We here report on the measurement procedure adopted and the relevant experimental results, including also detailed linear circuit modeling to determine the temperature dependence of basic physical parameters of the tested pseudomorphic HEMT's. We have already worked at moderately low temperatures (down to 220 K) on either packaged and on wafer microwave transistors and present results at lower temperatures confirm what has been previously found.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"161 1-3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120930487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Ultrafast Photonics Collaboration (UPC) 超快光子学合作(UPC)
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919026
T. Krauss
{"title":"The Ultrafast Photonics Collaboration (UPC)","authors":"T. Krauss","doi":"10.1109/EDMO.2000.919026","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919026","url":null,"abstract":"The Ultrafast Photonics Collaboration (UPC) is a recently funded Interdisciplinary Research Collaboration with the aim of exploiting novel photonic technologies for ultrafast data communications networks. This paper discusses the nature of the collaboration and outlines the scientific programme.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121481582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
N- and p-type Si-SiGe hetero FETs N型和p型Si-SiGe异质场效应管
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919017
U. Konig
{"title":"N- and p-type Si-SiGe hetero FETs","authors":"U. Konig","doi":"10.1109/EDMO.2000.919017","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919017","url":null,"abstract":"The paper reviews the status of SiGe hetero field effect transistors. Essential layer structures for Schottky-, p-n junction-, MOS-gated devices are presented. Mobilities and sheet carrier concentrations are given. Currents, transconductances, frequencies at room- and cryo-temperatures, and high and low frequency noise elucidate the potential of this device concept. Finally, first circuit results are discussed.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124962522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Influence of O/sub 2/ on rectification properties of nickel phthalocyanine thin film devices O/ sub2 /对酞菁镍薄膜器件整流性能的影响
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-08 DOI: 10.1109/EDMO.2000.919054
T. Anthopoulos, T. Shafai
{"title":"Influence of O/sub 2/ on rectification properties of nickel phthalocyanine thin film devices","authors":"T. Anthopoulos, T. Shafai","doi":"10.1109/EDMO.2000.919054","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919054","url":null,"abstract":"Thin sandwich film structure devices of gold/nickel phthalocyanine/lead (Au/NiPc/Pb) were fabricated employing a novel in-situ method. Electrical measurements were performed prior to, and after exposure of the samples to dry air. Under forward bias and for low applied voltages an ohmic conduction was evident, followed by SCLC in the higher voltage range. In the reverse bias, devices were found to exhibit weak rectifying properties originated mainly from the bulk of the NiPe layer. After exposure of the sample to dry air for five days a strong rectifying effect at the NiPc/Pb interface was evident. The phenomenon is believed to be associated with a change of NiPc work function as result of O/sub 2/ adsorption on the NiPc layer. To verify this a second sample of the type Au/NiPcO/sub 2//Pb was fabricated. Electrical characterization of the sample showed stronger rectifying properties providing further experimental evidence on the influence of O/sub 2/ adsorption on the organic layer. Potential barrier height and diode ideality factor for both NiPc/Pb, and NiPcO/sub 2//Pb interfaces after exposure to dry air, were also calculated.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116671338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electro-thermal modelling of microwave transistors and MMICs for optimised transient and steady-state performance 优化瞬态和稳态性能的微波晶体管和mmic的电热建模
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 1900-01-01 DOI: 10.1109/EDMO.2000.919060
S. David, W. Batty, A. J. Panks, R.G. Johnson, C. Snowden
{"title":"Electro-thermal modelling of microwave transistors and MMICs for optimised transient and steady-state performance","authors":"S. David, W. Batty, A. J. Panks, R.G. Johnson, C. Snowden","doi":"10.1109/EDMO.2000.919060","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919060","url":null,"abstract":"The influence of the physical layout of MESFET-based MMICs, on active device temperature and I-V characteristics, is investigated. These transient and steady state simulations represent the first reported, fully physical, coupled electro-thermal studies on CAD timescales. Calculated temperature rises are compared against experimental results obtained by thermal imaging.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"232 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128619607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Predictive microwave device design by coupled electro-thermal simulation based on a fully physical thermal model 基于全物理热模型的耦合电热模拟预测微波器件设计
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 1900-01-01 DOI: 10.1109/EDMO.2000.919042
T. Batty, C. Christoffersen, S. David, A. J. Panks, R.G. Johnson, C. M. Snowden, I.B. Steer
{"title":"Predictive microwave device design by coupled electro-thermal simulation based on a fully physical thermal model","authors":"T. Batty, C. Christoffersen, S. David, A. J. Panks, R.G. Johnson, C. M. Snowden, I.B. Steer","doi":"10.1109/EDMO.2000.919042","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919042","url":null,"abstract":"Coupled electro-thermal simulations are performed to demonstrate predictive design of microwave devices. These simulations are based on an original, fully physical, thermal impedance matrix approach, capable of describing 'nearly exactly' time-dependent heat flow in complex 3-dimensional systems, whilst requiring no model reduction for electro-thermal CAD. This thermal model is validated by thermal imaging of passive grid arrays representative of spatial power combining architectures. Electro-thermal transient, single-tone, two-tone and multi-tone harmonic balance simulations are presented for a MESFET amplifier, by implementing the thermal impedance matrix approach in microwave circuit simulator, Transim (NCSU).","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126223246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Metal gate strained silicon MOSFETs for microwave integrated circuits 微波集成电路用金属栅应变硅mosfet
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 1900-01-01 DOI: 10.1109/EDMO.2000.919024
G. Ternent, D.L. Edger, H. McLelland, F. Williamson, S. Ferguson, S. Kaya, C. Wilkinson, I. Thayne, K. Fobelets, J. Hampson
{"title":"Metal gate strained silicon MOSFETs for microwave integrated circuits","authors":"G. Ternent, D.L. Edger, H. McLelland, F. Williamson, S. Ferguson, S. Kaya, C. Wilkinson, I. Thayne, K. Fobelets, J. Hampson","doi":"10.1109/EDMO.2000.919024","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919024","url":null,"abstract":"In this work a III-V MODFET fabrication process has been adapted to fabricate metal gate silicon based MOSFETs. A range of MOSFETs with gate lengths varying from 1 /spl mu/m to 120 nm were fabricated and all showed good transistor action. The gate metal was Ti/Pd/Au 200 nm thick and both pyramidal and T shaped gates were fabricated. The parasitic gate-source capacitance was reduced by using a spin on dielectric. The strained silicon MOSFETs with rectangular 0.3 /spl mu/m Ti/Pd/Au gates had measured f/sub T/ and f/sub max/, of 11 GHz and 12 GHz respectively. By de-embedding the parasitic pad capacitance the intrinsic f/sub T/ and f/sub max/ are 20 GHz and 21 GHz.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125183679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of current-dependent and frequency-dependent gain suppression on the nonlinear dynamics of semiconductor lasers 电流相关和频率相关增益抑制对半导体激光器非线性动力学的影响
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 1900-01-01 DOI: 10.1109/EDMO.2000.919028
C. G. Lim, S. Iezekiel, C. M. Snowden
{"title":"Effects of current-dependent and frequency-dependent gain suppression on the nonlinear dynamics of semiconductor lasers","authors":"C. G. Lim, S. Iezekiel, C. M. Snowden","doi":"10.1109/EDMO.2000.919028","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919028","url":null,"abstract":"By taking the current and frequency-dependence of the nonlinear gain suppression factor into account, improved agreement between single-mode rate equations simulations and measured results for the nonlinear dynamics of a 1.55 /spl mu/m InGaAsP laser diode is obtained.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131093257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Very high volume production of GaAs MMICs 大量生产GaAs mmic
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 1900-01-01 DOI: 10.1109/EDMO.2000.919034
C. Snowden, N. Cameron
{"title":"Very high volume production of GaAs MMICs","authors":"C. Snowden, N. Cameron","doi":"10.1109/EDMO.2000.919034","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919034","url":null,"abstract":"The increase in demand for performance semiconductor devices supply the mobile communications market has led to dramatic developments in the compound semiconductor business, with the launch of a number of 6\" GaAs foundries. The background to the demand for very high volumes of RF products for this market is discussed, together with the prospects for future growth. The recent establishment of a very large 6\" GaAs facility by Filtronic plc in the UK is described together with the technical and economic considerations that will lead to a capacity of up to 175,000 wafers/annum.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124427412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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