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8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)最新文献

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Electric field switching in a resonant tunneling diode electroabsorption modulator 谐振隧道二极管电吸收调制器中的电场开关
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2001-03-17 DOI: 10.1109/EDMO.2000.919048
J. Figueiredo, C. Ironside, C. Stanley
{"title":"Electric field switching in a resonant tunneling diode electroabsorption modulator","authors":"J. Figueiredo, C. Ironside, C. Stanley","doi":"10.1109/EDMO.2000.919048","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919048","url":null,"abstract":"The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analysed and the theory compared with experimental results; good agreement is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration and it is shown that an RTD-EAM can provide significant absorption coefficient change, via the Franz-Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve 28 dB optical modulation in a 200 /spl mu/m active length device. The advantage of the RTD-EAM, over the conventional reversed biased pn junction EAM, is that the RTD-EAM has in essence an integrated electronic amplifier.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114676398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Noise investigation of SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation 低温等离子阳极氧化生长栅极氧化SiGe和Si nmosfet的噪声研究
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919020
N. Lukyanchikova, M.V. Petrichuk, N.P. Garbar, L. Riley, S. Hall
{"title":"Noise investigation of SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation","authors":"N. Lukyanchikova, M.V. Petrichuk, N.P. Garbar, L. Riley, S. Hall","doi":"10.1109/EDMO.2000.919020","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919020","url":null,"abstract":"It is found that two noise components are responsible for the noise observed in the frequency range f=1 Hz to 100 kHz in SiGe and Si nMOSFETs with gate oxide grown by low temperature plasma anodisation. These components are the 1/f noise and the generation-recombination (GR) noise. It is shown that the 1/f noise component is due to fluctuations of the charge in slow oxide traps while the bulk centers located in some thin layer of the semiconductor give rise to the GR noise component. The analysis of the noise data allows one to get the following information concerning those oxide and bulk centers: (i) the density D/sub ot/ of the oxide traps in the SiGe nMOSFETs and the Si nMOSFETs are 7.2/spl middot/10/sup 12/ cm/sup -2/ (eV)/sup -1/ and 1.4-10/sup 11/ cm/sup -2/(eV)./sup -1/, respectively, so that the value of D/sub ot/ is 50 times higher in SiGe devices than in Si devices; (ii) the density D/sub ot/ of the bulk GR centers is equal to 3/spl middot/10/sup 10/ cm/sup -2/ in both the SiGe and Si devices; (iii) the electron and hole capture cross sections for these centers as well as their energy level and their depth below the oxide/semiconductor interface are also the same in the devices of both types. This suggests that those GR centers are of the same nature in all devices studied.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116744873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The design of a single frequency ice gauge using a microstrip patch antenna 采用微带贴片天线设计单频测冰仪
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919047
S.M. Khan
{"title":"The design of a single frequency ice gauge using a microstrip patch antenna","authors":"S.M. Khan","doi":"10.1109/EDMO.2000.919047","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919047","url":null,"abstract":"Ice gauges that are both highly sensitive and highly reliable are needed by the aerospace sector. One form of ice gauges uses a RMPA (Rectangular Microstrip Patch Antenna) to meter ice thickness with the help of multiple frequencies. The scheme uses a variable frequency generator, an impedance bridge and a frequency controller. The sensor relies on the principle that the changes in ice thickness result in a change in antenna impedance and the antenna becomes resonant at a different frequency. The microprocessor controlled variable frequency generator then seeks out the new resonant point and the thickness corresponding to that point is read off. At the department of Engineering Technology efforts are underway to design a new system that is less expensive, less bulky and at least as reliable as the previously mentioned design. This paper will elaborate on this scheme. The design does away with the variable signal generator and the impedance bridge to decrease both the cost and the size of the system. The design uses a RMPA and a printed circuit feed and detection network. Simulations have been run to both prove the concept and to study the effect of different kinds of ice formations (patterns) on the S11 of the antenna. Comments will be made on how a high impedance surface might benefit this design.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124590473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and realisation of a novel balanced self-oscillating mixer topology 一种新型平衡自振荡混频器拓扑结构的设计与实现
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919044
N. Bourhill, S. Iezekiel, D. Steenson
{"title":"Design and realisation of a novel balanced self-oscillating mixer topology","authors":"N. Bourhill, S. Iezekiel, D. Steenson","doi":"10.1109/EDMO.2000.919044","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919044","url":null,"abstract":"A balanced self-oscillating mixer is proposed and investigated as an up-converter. The circuit consists of a pair of AlGaAs/GaAs 10/spl times/45 /spl mu/m pHEMTs, which oscillate in anti-phase at 7.5 GHz using the extended resonance effect. The conversion gain is 3.6 dB and the second order intermodulation is reduced by 18.3 dB. The output of the two oscillators are combined using a Wilkinson power divider resulting in an LO to RF isolation of over 40 dB.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114624251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New method to determine the HBT's capacitances using multi-bias S-parameter measurements 利用多偏置s参数测量HBT电容的新方法
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919070
A. Ouslimani, H. Hafdallah, J. Gaubert, M. Medjnoun, P. Pouvil
{"title":"New method to determine the HBT's capacitances using multi-bias S-parameter measurements","authors":"A. Ouslimani, H. Hafdallah, J. Gaubert, M. Medjnoun, P. Pouvil","doi":"10.1109/EDMO.2000.919070","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919070","url":null,"abstract":"A new method to determine the base-emitter and the intrinsic and extrinsic base-collector capacitances is proposed. It uses nonlinear equations obtained from a combination of six coefficients of polynomial functions named \"expression blocks\". The polynomial function are derived from suitable organisation of combined Z-parameter analytical expressions of the small-signal HBT equivalent circuit. The value of each \"expression blocks\"\" is extracted in the adequate frequency range from S-parameter measurements. The method is validated treating HBTs at multi-bias conditions.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129931116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of impact ionization in scaled pHEMTs 冲击电离对phemt的影响
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919065
K. Kalna, A. Asenov, K. Elgaid, I. Thayne
{"title":"Effect of impact ionization in scaled pHEMTs","authors":"K. Kalna, A. Asenov, K. Elgaid, I. Thayne","doi":"10.1109/EDMO.2000.919065","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919065","url":null,"abstract":"The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an additional scattering mechanism in the Monte Carlo module. The critical drain voltage, at which device characteristics begin to indicate breakdown, decreases as the gate voltage is lowered. Similarly, the breakdown drain voltage is also found to decrease during the scaling process.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132432255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A novel optical fibre based sensor for monitoring a high power microwave powered UV light source and its use in detection of microwave electric fields 一种基于光纤的高功率微波紫外光源监测传感器及其在微波电场检测中的应用
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919055
C. Fitzpatrick, E. Lewis, A. Al-Shamma'a, J. Lucas, K. Grattan
{"title":"A novel optical fibre based sensor for monitoring a high power microwave powered UV light source and its use in detection of microwave electric fields","authors":"C. Fitzpatrick, E. Lewis, A. Al-Shamma'a, J. Lucas, K. Grattan","doi":"10.1109/EDMO.2000.919055","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919055","url":null,"abstract":"A novel optical fibre sensor has been developed which is capable of monitoring ultra violet light output from a high power (>100 W) light source. This sensor comprises of a large core multimode fibre which has had its cladding removed and been coated with a phosphor doped polymer. Experiments are described which show the sensor's response to varying ultra violet light powers and the phosphor's absorption spectrum. A significant application for this sensor is the detection of microwave radiation in a cavity or waveguide of a microwave source using a miniaturised version of the tube and fibre. A proposal for this design is included.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126335246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient direct modulation of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 /spl mu/m 半绝缘基片上1.5 /spl μ m碰撞脉冲锁模激光的有效直接调制
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919051
H.K. Lee, M. W. Street, I. Thayne, A. Bryce, J. Marsh
{"title":"Efficient direct modulation of colliding pulse mode-locked lasers on semi-insulating substrate at 1.5 /spl mu/m","authors":"H.K. Lee, M. W. Street, I. Thayne, A. Bryce, J. Marsh","doi":"10.1109/EDMO.2000.919051","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919051","url":null,"abstract":"Colliding pulse mode-locked (CPM) lasers operating at 1.5 /spl mu/m and with a repetition frequency of 36 GHz were fabricated on semi-insulating substrates. When the RF power injected into the saturable absorber at the fundamental frequency was as small as 9.0 dBm, hybrid CPM was observed. Linewidth-narrowing and pedestal suppression became pronounced for RF powers as low as 0 dBm.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"1122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122942254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Material and device issues of GaN-based HEMTs 氮化镓基hemt的材料和器件问题
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919030
P. Kordos, A. Alam, J. Betkó, P. Chow, M. Heuken, P. Javorka, M. Kocan, M. Marso, M. Morvic, J. M. Van Hove
{"title":"Material and device issues of GaN-based HEMTs","authors":"P. Kordos, A. Alam, J. Betkó, P. Chow, M. Heuken, P. Javorka, M. Kocan, M. Marso, M. Morvic, J. M. Van Hove","doi":"10.1109/EDMO.2000.919030","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919030","url":null,"abstract":"Material structure and device processing issues related to the performance of high-frequency and high-power AlGaN-GaN HEMTs are discussed. Results on selected issues like transport properties of highly resistive buffer layers, persistent photoconductivity in 2DEG structures, preparation and properties of ohmic and Schottky-barrier contacts and HEMT devices, as well as analysis of deep traps in HEMTs are addressed in this paper in detail.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134337810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Variable gain SiGe HBT amplifier with low noise figure 具有低噪声系数的可变增益SiGe HBT放大器
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919021
A. Pascht, I. Kallfass, R. Obergfell, M. Berroth
{"title":"Variable gain SiGe HBT amplifier with low noise figure","authors":"A. Pascht, I. Kallfass, R. Obergfell, M. Berroth","doi":"10.1109/EDMO.2000.919021","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919021","url":null,"abstract":"The advances in SiGe processing technology are increasing the transit frequency f/sub T/ of transistors. In combination with the small base resistance of SiGe devices, low noise transistors are available. This kind of device can be used to design low noise amplifiers in the low GHz range for mobile communication products. Power fluctuations in mobile networks require low noise amplifiers with variable gain. This paper presents a low noise amplifier with variable gain using SiGe technology at f=900 MHz. The gain is V=18.4 dB at f=900 MHz with a noise figure of F/sub 50/=2.2 at 50 Ohm respectively. The attenuation is cascaded in three stages with an attenuation of a=3 dB per stage.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128686204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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