8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)最新文献_第2页

Characterization of nonlinear device capacitance in frequency domain 非线性器件电容的频域表征

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919069

W.Y. Liu, M. Steer, D. Steenson

引用次数: 1

Base-collector design optimisation of InGaP/GaAs DHBTs InGaP/GaAs dhbt基集电极设计优化

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919040

A. Rezazadeh, M. Sotoodeh, N. Dharmasiri

{"title":"Base-collector design optimisation of InGaP/GaAs DHBTs","authors":"A. Rezazadeh, M. Sotoodeh, N. Dharmasiri","doi":"10.1109/EDMO.2000.919040","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919040","url":null,"abstract":"In this paper we present the design and realisation of DHBTs based on InGaP/GaAs and compare the performance of these devices with the standard single HBT (SHBT). Optimisation of these devices in terms of base/collector electron collection efficiency is also discussed using the base and collector transit times, /spl tau//sub B/ and /spl tau//sub C/, deduced from the phase and magnitude of the common-base current gain, /spl alpha/(/spl omega/), which itself was directly extracted from measured S-parameter data. The method is applied to InGaP/GaAs single and double HBTs. A smaller cut-off frequency in the latter device is attributed to /spl tau//sub B/ and /spl tau//sub C/ due to two effects: trapping of electrons in the conduction band triangular barrier existing at the base-collector (B-C) heterojunction and smaller saturation velocity of electrons in InGaP as compared to GaAs. Finally, a new B-C design of InGaP/GaAs DHBTs is proposed to partially compensate the transit time effects. Numerical simulation of the cut-off frequency demonstrates the superiority of the proposed structure for high frequency applications.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123878236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Terahertz repetition rates from harmonic modelocked monolithic compound-cavity laser diodes 谐波锁模单片化合物腔激光二极管的太赫兹重复率

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919027

D.A. Yanson, M. W. Street, E. Avrutin, S. McDougall, I. Thayne, J. Marsh

引用次数: 0

Suppression of instabilities in 4H-SiC microwave MESFETs 抑制4H-SiC微波mesfet的不稳定性

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919031

K. Hilton, M. Uren, D. Hayes, P. Wilding, B. Smith

引用次数: 17

Direct assessment of relaxation and defect propagation in different thin single Ge/Si and step-graded Si/sub 1-x//Si buffer layers for RF and microwave applications 射频和微波应用中不同单薄Ge/Si和阶梯渐变Si/sub - 1-x//Si缓冲层弛豫和缺陷传播的直接评估

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919073

M. Yousif, O. Nur, M. Karlsteen, M. Willander, C. Patel, C. Hernandez, Y. Campidelli, D. Bensahel, R.N. Kyutti

{"title":"Direct assessment of relaxation and defect propagation in different thin single Ge/Si and step-graded Si/sub 1-x//Si buffer layers for RF and microwave applications","authors":"M. Yousif, O. Nur, M. Karlsteen, M. Willander, C. Patel, C. Hernandez, Y. Campidelli, D. Bensahel, R.N. Kyutti","doi":"10.1109/EDMO.2000.919073","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919073","url":null,"abstract":"We have used the direct and strain sensitive double crystal and multi-crystal high resolution x-ray diffraction to perform double crystal rocking curves (DC-HRRC) and triple axis high resolution 2-D reciprocal space mapping (2D-RSIM) respectively, as the main tool to assess the relaxation and defect propagation in Ge and Si/sub 1-x/ relaxed buffers layers grown on Si [001] substrates. The present study represents one of the first studies regarding the direct extraction and assessment of relaxation parameters and defect propagation in relaxed buffer layers having top pure Ge fully relaxed layer. This technique allows the direct and accurate determination of the mismatches of the lattice parameters parallel and perpendicular to growth directions with an accuracy of 10/sup -5/. The investigated heterostructures include Ge/Si single epitaxial relaxed buffer layer (SE-RBL) and step graded multi layer Si/sub 1-x//Si relaxed buffer layer (SG-RBL) with Ge fractions of x=0.15, 0.44 and final pure Ge top layer. Moreover, the effect of post processing annealing is investigated for different temperature time cycles for some of these structures. The unique thin total grown thickness (maximum of 6 /spl mu/m) actually enables the use of the high resolution X-ray diffraction.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114801520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CIA-a comprehensive CAD tool for analog, RF, and microwave IC's cia -模拟，射频和微波IC的综合CAD工具

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919061

J. Dobes

引用次数: 10

Application of evolutionary computation techniques to nonlinear microwave circuit analysis 演化计算技术在非线性微波电路分析中的应用

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919064

Stavros Iezekiel

引用次数: 3

Si/SiGe IC's with low cost in the 15 to 20 GHz range 15至20 GHz范围内的低成本Si/SiGe IC

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919022

T. Teppo, E. Sonmez, K. Schad, L. Ābele, H. Schumacher

引用次数: 7

Ultra-broadband nonlinear PHEMT modelling using TOPAS/sup TM/ 基于TOPAS/sup TM/的超宽带非线性PHEMT建模

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919035

D. McPherson, K. Elgaid, I. Thayne, I. Robertson, S. Lucyszyn

引用次数: 1

Physical property based HBT models for SPICE simulation 基于物理性质的HBT模型用于SPICE仿真

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534) Pub Date : 2000-11-13 DOI: 10.1109/EDMO.2000.919071

C. Sa-ngiamsak, S. Harrold

{"title":"Physical property based HBT models for SPICE simulation","authors":"C. Sa-ngiamsak, S. Harrold","doi":"10.1109/EDMO.2000.919071","DOIUrl":"https://doi.org/10.1109/EDMO.2000.919071","url":null,"abstract":"A one-dimensional analytical model for both graded-base and uniform-base AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) with or without band spikes is presented. The model is based on Physical Property Based Equations (PPBEs). The PPBEs are arranged in a form which allows a commercial CAD package (Cadence) to predict the SPICE parameters directly from a transistor profile which specifies the doping, thickness, material properties, energy band structure, and dimensions of the transistor. Implementing the PPBEs within a CAD package provides a powerful tool for a circuit designer. The designer is given the flexibility to investigate the effect of modifications in the transistor profile on the circuit performance, without being restricted to a particular technology. Hence, the design based on this work will be a truly custom integrated circuit design not constrained by the limitations of any technology libraries. The accuracy of the model is tested by comparing predicted SPICE parameters with parameters obtained from fitting to measured transistor characteristics. The predicted I-V characteristics are also compared with the measured characteristics.","PeriodicalId":396889,"journal":{"name":"8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534)","volume":"2010 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114540384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0