Design of a 50 Gbit/s InP/InGaAs HBT master-slave D-type flip-flop

A. Kasbari, P. Andre, S. Blayac, M. Riet, A. Konczykowska, H. Ouslimani, J. Godin
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引用次数: 1

Abstract

The design of a 50 Gbit/s master-slave D-type flip-flop for ETDM transmission system is presented. The chip is fabricated in an InP/InGaAs DHBT self-aligned technology with typical Ft and Fmax of about 160 GHz and 210 GHz respectively. We show how our design benefits at best from the available technology. The switching of the transistors is optimised as well as the sizing of basic blocks like emitter-followers or current switches. At this operating frequency, the layout step imposes to take into account propagation phenomena and interconnection parasitic elements, which necessarily degrade the performances. Appropriate methods are systematically applied to evaluate and reduce these effects.
50gbit /s InP/InGaAs HBT主从d型触发器的设计
介绍了一种用于ETDM传输系统的50gbit /s主从d型触发器的设计。该芯片采用InP/InGaAs DHBT自对准技术,典型的Ft和Fmax分别约为160 GHz和210 GHz。我们展示了我们的设计如何从现有技术中获益。晶体管的开关以及发射器跟随器或电流开关等基本模块的尺寸都得到了优化。在此工作频率下,布局步骤要求考虑传播现象和互连寄生元素,这必然会降低性能。系统地应用适当的方法来评价和减少这些影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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