发布求助
文献互助 智能选刊 最新文献

2007 International Semiconductor Conference最新文献

筛选
英文 中文
Software Simulation and Performance Analysis for Turbo Encoding/Decoding Chip Components for Magnetic Recording Channels 磁记录通道涡轮编码/解码芯片组件的软件模拟和性能分析
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519776
P. M. Putinica, S. Stancescu
{"title":"Software Simulation and Performance Analysis for Turbo Encoding/Decoding Chip Components for Magnetic Recording Channels","authors":"P. M. Putinica, S. Stancescu","doi":"10.1109/SMICND.2007.4519776","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519776","url":null,"abstract":"This work argues that low cost chip components implementations of turbo codes still reach near the absolute maximum capacity of the magnetic recording channel. The turbo encoder/decoder presented is simulated in software and its performances are analyzed against other encoding and recording solutions, such as PRML channels and MTR-RLL codes. Simulation results confirmed the significant performance gains (BER versus SNR) introduced by turbo codes and proved that the hardware implementations of the turbo encoder/decoder components allow greater recording densities.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127099428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non Inverting Differential Asymmetrical CMOS Comparator with Intrinsic Hysteresis and Adjustable Asymmetry 具有固有迟滞和可调不对称的非反相差分非对称CMOS比较器
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519784
R. Lonescu, O. Mita, F. Vlădoianu, G. Brezeanu
{"title":"Non Inverting Differential Asymmetrical CMOS Comparator with Intrinsic Hysteresis and Adjustable Asymmetry","authors":"R. Lonescu, O. Mita, F. Vlădoianu, G. Brezeanu","doi":"10.1109/SMICND.2007.4519784","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519784","url":null,"abstract":"A non inverting differential asymmetrical CMOS comparator with intrinsic hysteresis and adjustable asymmetry is presented in this paper. A widely tunable hysteresis window was obtained. The threshold voltage of the comparator is adjustable up to +150 mV of the input differential signal in 16 steps. The input differential signal is 400 mVpp with a frequency of 1 MHz. The bias current is 50 uA and the supply voltage is 3.3 V. The design was made in basic gpdk Cadence integrated circuits front to back 0.18 um CMOS technology. The response time was minimized and also the difference between the phases of the outputs was minimized. This comparator can be used, with good performance, in signal conditioning chains.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115995708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The Voltage Dependence of Reverse Current of Semiconductor PN Junctions and its Distribution over the Device Area 半导体PN结反向电流的电压依赖性及其在器件面积上的分布
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519766
V. Obreja
{"title":"The Voltage Dependence of Reverse Current of Semiconductor PN Junctions and its Distribution over the Device Area","authors":"V. Obreja","doi":"10.1109/SMICND.2007.4519766","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519766","url":null,"abstract":"Experimental electrical characteristics at room and high temperature are presented for germanium, silicon and silicon carbide PN junction diodes. Linear voltage dependence of reverse current is exhibited for a portion of electrical characteristic if plots in linear-linear scales are considered. At higher applied voltage, deviation from the linear dependence is usually exhibited. In the case of germanium diodes and silicon diodes, existing experimental evidence indicates that such behavior is possible when most of reverse current flows at the junction edge. In the case of silicon carbide PN junctions similar behavior suggests that significant reverse current may flow at the junction edge.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121873249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
High-Performance 1.3 μm Dilute-Nitride Edge-Emitting Lasers 高性能1.3 μm稀氮边发射激光器
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519673
M. Dumitrescu, A. Larsson, Y. Wei, E. Larkins, P. Uusimaa, K. Schulz, M. Pessa
{"title":"High-Performance 1.3 μm Dilute-Nitride Edge-Emitting Lasers","authors":"M. Dumitrescu, A. Larsson, Y. Wei, E. Larkins, P. Uusimaa, K. Schulz, M. Pessa","doi":"10.1109/SMICND.2007.4519673","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519673","url":null,"abstract":"The paper presents record performances achieved by dilute-nitride edge-emitting lasers developed in the EU-FP6 project FAST ACCESS. Some of the dilute-nitride material particularities together with epitaxial growth, post-growth treatment and laser structure issues are discussed. Record threshold current, slope efficiency, characteristic temperature, small- and large-signal modulation are presented, proving that the dilute-nitride GalnAsN lasers are a solution for low-cost un-cooled transmitters targeting the metropolitan and access area networks.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121969762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Burst Mode Switching Mechanism for an Inductorless DC-DC Converter 无电感DC-DC变换器的突发模式开关机制
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519760
M. Budaes, L. Goras
{"title":"Burst Mode Switching Mechanism for an Inductorless DC-DC Converter","authors":"M. Budaes, L. Goras","doi":"10.1109/SMICND.2007.4519760","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519760","url":null,"abstract":"A burst mode (BM) switching mechanism for an inductorless DC-DC voltage converter is presented. The proposed solution for switching on and off the BM consists in detecting the load current indirectly, without using a resistive sensor.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129693904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
A Self-Consistent Modeling of 4H-SiC Schottky Barrier Diodes 4H-SiC肖特基势垒二极管的自一致建模
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519778
M. Tayel, A. El-Shawarby
{"title":"A Self-Consistent Modeling of 4H-SiC Schottky Barrier Diodes","authors":"M. Tayel, A. El-Shawarby","doi":"10.1109/SMICND.2007.4519778","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519778","url":null,"abstract":"The present slate of SiC power Schottky barrier diode (SBR) is presented in this paper. 4H-SIC SBD is modeled using a self-consistent model. The model is based on the solution of semiconductor transport equations from the surface to the bulk region. The model includes the effect of oxide thickness at the metal semiconductor interface SiO2/SiC; effective oxide charge at the interfacial layer included the fixed and mobile charges, and the effect of interface state charge density. A very good agreement between the simulated forward characteristics using the present model and published experimental data. The model is used to characterize the barrier height change due to effect of oxide thickness, effective oxide charge, and interface state charge density.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128042123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The EDFA Model based on BDI Processes 基于BDI流程的EDFA模型
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519687
F. Vasile, P. Schiopu
{"title":"The EDFA Model based on BDI Processes","authors":"F. Vasile, P. Schiopu","doi":"10.1109/SMICND.2007.4519687","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519687","url":null,"abstract":"In this work, we analyze the EDFA model based on BDI processes. We determine the EDFA parameters using Gaussian approximation. In addition, we calculate the error probability in different approximations and compare these results with theoretical and experimental results. Also, we present the analytical method to calculate signal-to- noise ratio. The BDI processes are used to model EDFA for different applications used in optical networks.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124368899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two Beams Modified Lemniscate Undulator 双波束修正Lemniscate波动器
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519775
S. Micloş, M. Rusu, D. Tenciu, V. Savu, L. Giurgiu, F. Scarlat, V. Niculescu
{"title":"Two Beams Modified Lemniscate Undulator","authors":"S. Micloş, M. Rusu, D. Tenciu, V. Savu, L. Giurgiu, F. Scarlat, V. Niculescu","doi":"10.1109/SMICND.2007.4519775","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519775","url":null,"abstract":"Analogic simulation is more intuitive and also enables a validation of the numerical simulation. The undulator consists of a modified lemniscate wires stack. In each wire the current circulates alternatively from a wire to another. The modified lemniscate, comprizing a lemniscate portion and a linear, is implemented using an analog gate controlled by a gate signal.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114905237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compact Load-Coupling Network for Microwave Current Mode Class-D Power Amplifiers 用于微波电流模式d类功率放大器的紧凑负载耦合网络
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519689
Pouya Aflaki, R. Negra, F. Ghannouchi
{"title":"Compact Load-Coupling Network for Microwave Current Mode Class-D Power Amplifiers","authors":"Pouya Aflaki, R. Negra, F. Ghannouchi","doi":"10.1109/SMICND.2007.4519689","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519689","url":null,"abstract":"This paper presents the design and implementation of a highly efficient current-mode class D (CMCD) power amplifier (PA) using a 2W GaN HEMT device. A switched-based model was developed in-house for the commercially available GaN power device and used extensively for the analysis and the design of the CMCD PA. The compact load coupling network, comprising a load transformation network, a higher harmonic impedance termination tank and a balun, used for the 1 GHz power amplifier measures only 37 mm times 76 mm while providing suitable means for tuning the performance of the amplifier. The fabricated CMCD PA achieves a drain efficiency of 65% for an output power of around 36 dBm with more than 7.4 dB of power gain at 1 GHz.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"519 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116253660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Design of a Thermooptical Modulator based on SOI Waveguides 基于SOI波导的热光调制器设计
2007 International Semiconductor Conference Pub Date : 2007-10-01 DOI: 10.1109/SMICND.2007.4519682
M. Kusko, F. Comanescu, C. Tibeica, D. Cristea
{"title":"Design of a Thermooptical Modulator based on SOI Waveguides","authors":"M. Kusko, F. Comanescu, C. Tibeica, D. Cristea","doi":"10.1109/SMICND.2007.4519682","DOIUrl":"https://doi.org/10.1109/SMICND.2007.4519682","url":null,"abstract":"In this work we have studied theoretically a thermo optic modulator based on a Mach-Zehnder interferometer with silicon waveguides. We have used optical analysis for designing a single mode, polarization insensitive Mach-Zehnder interferometer and the thermal analysis for determining the required apllied voltage for switching from ON to OFF state. We have obtained that the applied voltage value should be around 2.6 V.","PeriodicalId":376866,"journal":{"name":"2007 International Semiconductor Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116442442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信