2012 15th International Workshop on Computational Electronics最新文献_第3页

Electron-hole transport asymmetry in boron-doped graphene field effect transistors 掺硼石墨烯场效应晶体管中的电子空穴输运不对称性

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242844

P. Marconcini, A. Cresti, F. Triozon, G. Fiori, B. Biel, Y. Niquet, M. Macucci, S. Roche

引用次数: 10

Computational analysis on the emission of ZnO nanowires and coreshell CdSe/ZnS quantum dots deposited on different substrates 不同衬底上ZnO纳米线和核壳CdSe/ZnS量子点发射特性的计算分析

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242830

S. Farid, M. Purahmad, M. Stroscio, M. Dutta

引用次数: 4

Electronic transport in GAA silicon nanowire MOSFETs: From Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient GAA硅纳米线mosfet中的电子输运:从Kubo-Greenwood迁移率，包括筛选远程库仑散射到分析后向散射系数

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242829

J. Dura, F. Triozon, D. Munteanu, S. Barraud, S. Martinie, J. Autran

{"title":"Electronic transport in GAA silicon nanowire MOSFETs: From Kubo-Greenwood mobility including screening remote coulomb scattering to analytical backscattering coefficient","authors":"J. Dura, F. Triozon, D. Munteanu, S. Barraud, S. Martinie, J. Autran","doi":"10.1109/IWCE.2012.6242829","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242829","url":null,"abstract":"This paper presents the study of electron mobility in intrinsic silicon nanowires using the Kubo-Greenwood approach. This architecture (now considered as a realistic technology [1,2]) is aimed for ultra-scaled devices up to technology nodes sub-11nm [3] with silicon films of some nanometers. At these dimensions, the transport regime is completely modified due to the multi-subband transport. However, the promising potentialities of nanowires for microelectronic applications are not still demonstrated at all simulation levels (from atomistic to circuit performances). That is why the electronic transport is here investigated numerically using the Kubo-Greenwood approach coupled to a selfconsistent Schrödinger-Poisson solver. Then, to support compact modelling including ultimate physical phenomena, an analytical model of the electron mobility and backscattering coefficient is exposed. The geometry dependence is essentially pointed out on the backscattering coefficient for a wide range of channel lengths (up to 10 nm) and diameters (3 nm≤Ø≤20 nm).","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116105864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Band to band tunneling in heterojunctions: Semi-classical versus quantum computation 异质结的带间隧穿:半经典与量子计算

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242819

A. Ajoy

引用次数: 2

Shot noise behavior in single-electron quantum dot-based structures 单电子量子点结构中的散粒噪声行为

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242828

V. Talbo, S. Galdin-Retailleau, D. Querlioz, P. Dollfus

引用次数: 0

Effects of atomicity and internal polarization on the electronic and optical properties of GaN/AlN quantum dots: Multimillion-atom coupled VFF MM-sp3 d5 s∗ tight-binding simulations 原子性和内部极化对GaN/AlN量子点电子和光学性质的影响:百万原子耦合VFF MM-sp3 d5 s∗紧密结合模拟

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242864

S. Sundaresan, K. Yalavarthi, S. Ahmed

{"title":"Effects of atomicity and internal polarization on the electronic and optical properties of GaN/AlN quantum dots: Multimillion-atom coupled VFF MM-sp3 d5 s∗ tight-binding simulations","authors":"S. Sundaresan, K. Yalavarthi, S. Ahmed","doi":"10.1109/IWCE.2012.6242864","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242864","url":null,"abstract":"Single-particle electronic structure and optical transition rates between the HOMO and LUMO states of a self-organized wurtzite GaN/AlN single quantum dot grown along the [0001] axis are calculated within an atomistic 20-band sp3 d5 s* tight-binding framework. The GaN/AlN quantum dot used in this computational study is realistically-sized (containing ~9 million atoms) and of truncated pyramid shape having height and base length of 4.5 nm and 23 nm, respectively. These reduced-dimensionality III-N structures are subject to competing effects of size-quantization and long-range internal fields that originate from: a) fundamental crystal atomicity and the interface discontinuity between two dissimilar materials; b) atomistically strained active region; c) strain-induced piezoelectricity; and d) spontaneous polarization (pyroelectricity). The mechano-electrical internal fields in the structure have been modeled using a combination of an atomistic valence force-field molecular mechanics (VFF MM) approach and a three-dimensional Poisson solver, and have found to strongly modulate the intrinsic single-particle electronic and optical properties of the quantum dots. In particular, in contrast to the well-studied InN/GaN systems, the effects of piezoelectric and pyroelectric fields add up (peak pyroelectric potential being larger than the piezoelectric counterpart) and result in a large redshift in the electronic bandgap near the Brillouin zone center (known as quantum confined stark effect), pronounced non-degeneracy in the excited states, strongly suppressed optical transition (increased recombination time), and anisotropic emission spectra.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"2018 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126784883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electro-thermo-mechanical simulation of AlGaN/GaN HEMTs AlGaN/GaN hemt的电-热-机械模拟

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242824

M. Auf der Maur, G. Romano, A. Di Carlo

引用次数: 6

Scattering in GaAs for Fermi kinetics transport 砷化镓中费米动力学输运的散射

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242834

M. Grupen

引用次数: 2

Multiband tight-binding model for strained and bilayer graphene from DFT calculations 基于DFT计算的应变石墨烯和双层石墨烯的多带紧密结合模型

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242826

T. Boykin, M. Luisier, N. Kharche, X. Jaing, S. Nayak, A. Martini, Gerhard Klimeck

引用次数: 7

Multi-time measurement and displacement current in time-dependent quantum transport 时变量子输运中的多时间测量和位移电流

2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242849

X. Oriols, F. Traversa, G. Albareda, A. Benali, A. Alarcón, S. Yaro, X. Cartoixà

{"title":"Multi-time measurement and displacement current in time-dependent quantum transport","authors":"X. Oriols, F. Traversa, G. Albareda, A. Benali, A. Alarcón, S. Yaro, X. Cartoixà","doi":"10.1109/IWCE.2012.6242849","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242849","url":null,"abstract":"With the aim of manufacturing faster and smaller devices, the electronic industry is today entering into the nanoscale and the high frequency regimes. In this particular scenario, the dynamics of the electron charge becomes affected by quantum mechanical laws, both, for its spatial or temporal description. We have recently shown that Bohmian trajectories allow a direct treatment of the time-dependent many-particle interaction among electrons with an accuracy comparable to Density Functional Theory techniques. In addition, Bohmian mechanics, by combining wave functions and trajectories, provides a very simple description on how to describe multi-time measurements in quantum scenarios. Using the previous formalism, in this work we present a general purpose time-dependent 3D quantum electron transport simulator named BITLLES (Bohmian Interacting Transport in large low-dimensional Electronic Structures) especially indicated for AC, transients and noise predictions. As a numerical example of its capabilities, we compute the full electrical characteristics (DC, High frequency and fluctuations) of a Resonant Tunneling Diode.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122827195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0