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2012 15th International Workshop on Computational Electronics最新文献

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Towards the control of power dissipation through the use of many-body Coulomb correlations 通过使用多体库仑相关来控制功耗
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242821
G. Albareda, F. Traversa, A. Benali, X. Oriols
{"title":"Towards the control of power dissipation through the use of many-body Coulomb correlations","authors":"G. Albareda, F. Traversa, A. Benali, X. Oriols","doi":"10.1109/IWCE.2012.6242821","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242821","url":null,"abstract":"Power dissipation constitutes a major constriction in modern and future nanoelectronic design [1]. In this context, predictive models elucidating new criterions to control Joule heating would be valuable. In this work we reveal how an accurate formulation of the many-body Coulomb correlations among carriers can lead to new perspectives on the design of power-optimized electron devices. In particular, we show that for a ballistic semi-classical system the rate at which carriers gain (or loose) kinetic energy is a function of carrier-carrier correlations and differs in general from the expected value (I)· (ΔV).","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116837845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation 晶体取向为(100)和(110)的25 nm FD SOI器件的自加热和电流退化
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242855
K. Raleva, D. Vasileska, S. Goodnick
{"title":"Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation","authors":"K. Raleva, D. Vasileska, S. Goodnick","doi":"10.1109/IWCE.2012.6242855","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242855","url":null,"abstract":"In this paper we present simulation results obtained with our electro-thermal particle-based device simulator for 25 nm fully depleted silicon-on-insulator devices with (100) and (110) crystallographic orientations. We also investigate the importance of the proper choice of the thermal conductivity model (which is particularly important for thin silicon films) in properly predicting the average maximum temperature and the maximum temperature in the hot spot which are important parameters regarding device reliability.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129506188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accurate and efficient modelling of inelastic hole-acoustic phonon scattering in Monte Carlo simulations 蒙特卡罗模拟中非弹性空穴-声声子散射的精确高效建模
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242866
J. Watling, C. Riddet, A. Asenov
{"title":"Accurate and efficient modelling of inelastic hole-acoustic phonon scattering in Monte Carlo simulations","authors":"J. Watling, C. Riddet, A. Asenov","doi":"10.1109/IWCE.2012.6242866","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242866","url":null,"abstract":"Acoustic phonon scattering is known to play an important role in accurately describing hole-transport in semiconductors such as Si and Ge. However, it has been difficult to treat accurately and efficiently due to its dispersion relationship, thus it is often treated as an elastic process or by using constant phonon energy. Here we present an efficient approach for handling inelastic acoustic phonon scattering taking into account the full dispersion relationship. The proposed method unlike previous methods makes no assumption about the carrier distribution function, thus it is suitable for application within a device environment. The model is able to reproduce accurately the velocity-field characteristics over a wide-range of temperatures.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129341474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
WKB approximation based formula for tunneling probability through a multi-layer potential barrier 基于WKB近似的多层势垒隧穿概率公式
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242846
A. Mazurak, B. Majkusiak
{"title":"WKB approximation based formula for tunneling probability through a multi-layer potential barrier","authors":"A. Mazurak, B. Majkusiak","doi":"10.1109/IWCE.2012.6242846","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242846","url":null,"abstract":"In this work, we present a theoretical derivation of the analytical formula for tunneling probability through an n-layer barrier basing on the Wentzel-Kramers-Brillouin (WKB) and the effective mass approximations. The accuracy of the derived formula is analysed by comparison with the transfer matrix method (TMM). The effect of the electric charge distribution in a stack on the tunnel current is considered.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126266421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role of the physical scales on the transport regime 物理尺度在运输制度中的作用
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242848
M. Nedjalkov, P. Schwaha, S. Selberherr, D. Ferry, D. Vasileska, P. Dollfus, D. Querlioz
{"title":"Role of the physical scales on the transport regime","authors":"M. Nedjalkov, P. Schwaha, S. Selberherr, D. Ferry, D. Vasileska, P. Dollfus, D. Querlioz","doi":"10.1109/IWCE.2012.6242848","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242848","url":null,"abstract":"A relation called scaling theorem is formulated, which estimates how physical scales determine the choice between classical and quantum transport regimes.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125968453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Particle-grid techniques for semiclassical and quantum transport simulations 半经典和量子输运模拟的粒子网格技术
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242860
P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov
{"title":"Particle-grid techniques for semiclassical and quantum transport simulations","authors":"P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov","doi":"10.1109/IWCE.2012.6242860","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242860","url":null,"abstract":"Particle simulation techniques utilizing classical or quantum weights commonly involve a phase space grid for the calculation of averages. Properties of alternative particle-grid simulation strategies are investigated by using an experiment highly sensitive to variance. It is provided by the fine structure of entangled electron states subject to scattering with phonons. As the process of evolution describes decoherence and transition from quantum to classical our analysis concerns both transport regimes. An algorithm based on randomization-annihilation of particles shows better performance than an Ensemble Monte Carlo method.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131870002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photon absorption in regimented quantum dot arrays 管制量子点阵列中的光子吸收
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242833
A. L. Rodriguez, S. Rodríguez-Bolívar, F. Gómez-Campos
{"title":"Photon absorption in regimented quantum dot arrays","authors":"A. L. Rodriguez, S. Rodríguez-Bolívar, F. Gómez-Campos","doi":"10.1109/IWCE.2012.6242833","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242833","url":null,"abstract":"A study of the intraband absorption coefficient in cuboid InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the shape of the quantum dots. The effect of strain is also taken into account in the simulations through a previous 8×8 k·p calculation. We analyze the influence on the absorption coefficient on the miniband structure of the systems.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124394087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FEAST for complex band structure problems FEAST用于复杂的波段结构问题
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242840
S. Laux
{"title":"FEAST for complex band structure problems","authors":"S. Laux","doi":"10.1109/IWCE.2012.6242840","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242840","url":null,"abstract":"The FEAST eigenvalue algorithm of Polizzi [1] is extended to solve the complex band structure problem.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121325958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Inclusion of carrier-carrier-scattering into arbitrary-order spherical harmonics expansions of the Boltzmann transport equation 载流子-载流子-散射在玻尔兹曼输运方程的任意阶球谐展开中的包含
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242856
K. Rupp, P. Lagger, T. Grasser, A. Jungel
{"title":"Inclusion of carrier-carrier-scattering into arbitrary-order spherical harmonics expansions of the Boltzmann transport equation","authors":"K. Rupp, P. Lagger, T. Grasser, A. Jungel","doi":"10.1109/IWCE.2012.6242856","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242856","url":null,"abstract":"A methodology for handling carrier-carrier-scattering within the arbitrary-order spherical harmonics expansion method for computing deterministic numerical solutions of the Boltzmann transport equation is presented. Comparisons with results from Monte Carlo simulations confirm the accuracy of the proposed method for bulk silicon. Moreover, results for 22nm and 110nm MOSFET devices are presented. A significant elevation of the high-energy-tail of the distribution function is observed in the 22nm case, confirming that the inclusion of carrier-carrier-scattering is required for the investigation of hot-carrier-effects in scaled-down devices.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125681307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Geometry engineering for the RF behavior of low-dimensional gate-all-around transistors 低维栅极全能晶体管射频特性的几何工程
2012 15th International Workshop on Computational Electronics Pub Date : 2012-05-22 DOI: 10.1109/IWCE.2012.6242865
A. Benali, F. Traversa, G. Albareda, M. Aghoutane, X. Oriols
{"title":"Geometry engineering for the RF behavior of low-dimensional gate-all-around transistors","authors":"A. Benali, F. Traversa, G. Albareda, M. Aghoutane, X. Oriols","doi":"10.1109/IWCE.2012.6242865","DOIUrl":"https://doi.org/10.1109/IWCE.2012.6242865","url":null,"abstract":"The aim of this work is to show the dependence of the time dependent current of gate-all-around transistors on their geometries and thus to find out how to optimize their intrinsic AC behavior. The Ramo-Shockley-Pellegrini (RShP) theorem and many-particle Monte Carlo technique are used, through the recently developed BITLLES simulator which is devoted to simulate classical and quantum electronic devices, to tackle this problem. Analytical and Monte Carlo (MC) simulations show how the HF spectrum noticeably depends on the ratio between lateral (Ly, Lz) and longitudinal (Lx) dimensions of a gate-all-around transistor.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122797810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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