Photon absorption in regimented quantum dot arrays

A. L. Rodriguez, S. Rodríguez-Bolívar, F. Gómez-Campos
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Abstract

A study of the intraband absorption coefficient in cuboid InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the shape of the quantum dots. The effect of strain is also taken into account in the simulations through a previous 8×8 k·p calculation. We analyze the influence on the absorption coefficient on the miniband structure of the systems.
管制量子点阵列中的光子吸收
研究了嵌入砷化镓的长方体InAs量子点周期纳米结构的带内吸收系数。导带中电子态的微带结构与量子点的形状有关。通过先前的8×8 k·p计算,在模拟中也考虑了应变的影响。分析了吸收系数对系统微带结构的影响。
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