{"title":"基于WKB近似的多层势垒隧穿概率公式","authors":"A. Mazurak, B. Majkusiak","doi":"10.1109/IWCE.2012.6242846","DOIUrl":null,"url":null,"abstract":"In this work, we present a theoretical derivation of the analytical formula for tunneling probability through an n-layer barrier basing on the Wentzel-Kramers-Brillouin (WKB) and the effective mass approximations. The accuracy of the derived formula is analysed by comparison with the transfer matrix method (TMM). The effect of the electric charge distribution in a stack on the tunnel current is considered.","PeriodicalId":375453,"journal":{"name":"2012 15th International Workshop on Computational Electronics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"WKB approximation based formula for tunneling probability through a multi-layer potential barrier\",\"authors\":\"A. Mazurak, B. Majkusiak\",\"doi\":\"10.1109/IWCE.2012.6242846\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we present a theoretical derivation of the analytical formula for tunneling probability through an n-layer barrier basing on the Wentzel-Kramers-Brillouin (WKB) and the effective mass approximations. The accuracy of the derived formula is analysed by comparison with the transfer matrix method (TMM). The effect of the electric charge distribution in a stack on the tunnel current is considered.\",\"PeriodicalId\":375453,\"journal\":{\"name\":\"2012 15th International Workshop on Computational Electronics\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 15th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2012.6242846\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 15th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2012.6242846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
WKB approximation based formula for tunneling probability through a multi-layer potential barrier
In this work, we present a theoretical derivation of the analytical formula for tunneling probability through an n-layer barrier basing on the Wentzel-Kramers-Brillouin (WKB) and the effective mass approximations. The accuracy of the derived formula is analysed by comparison with the transfer matrix method (TMM). The effect of the electric charge distribution in a stack on the tunnel current is considered.
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