2011 37th IEEE Photovoltaic Specialists Conference最新文献_第2页

Electrical and optical properties of yttrium-doped zinc oxide by spray pyrolysis for solar cell applications 应用于太阳能电池的掺钇氧化锌喷雾热解的电学和光学性质

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186190

Kunhee Han, L. Guo, N. Shepherd, M. Tao

引用次数: 2

Holographic CPV field tests at the Tucson Electric Power solar test yard 图森电力公司太阳能测试场的全息CPV现场测试

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186423

A. Cronin, J. Castillo, P. Hauser, Glenn Rosenberg, Rakesh Kumar, R. Kostuk, Deming Zhang, J. Russo, S. Vorndran, V. Lonij, James B. Greenberg, A. Brooks

引用次数: 3

High mobility transparent conductive Oxide for low bandgap solar cells 用于低带隙太阳能电池的高迁移率透明导电氧化物

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6185898

R. Schropp, J. Rath, L. T. Yan

引用次数: 0

Crack induced surface potential variation on Si PV cells 裂纹诱导的硅光伏电池表面电位变化

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186298

Chris Yang, Yury B. Pyekh, S. Danyluk

{"title":"Crack induced surface potential variation on Si PV cells","authors":"Chris Yang, Yury B. Pyekh, S. Danyluk","doi":"10.1109/PVSC.2011.6186298","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186298","url":null,"abstract":"This paper describes measurements of the surface potential (SP) of silicon surfaces that contain cracks. The impact of cracks on the PV performance is also discussed using light illumination as compared to the dark condition. The surface potential was measured using the Kelvin probe technique, in both vibrating and non-vibrating modes, and the data were collected on bare silicon wafers and monocrystalline PV cells. It is found that there is almost no surface depletion on the newly cracked interfaces, which is different from the uncracked surface. The electrical field discontinuity at the crack surface brings about contact potential difference (CPD) signals in the non-vibrating mode. The SP at the crack surfaces is reversible and experimentally measured to be 23mV and 44mV for the light and dark conditions respectively. There is a decreasing surface potential at the cracks in the PV cells, which is similar to that on bare silicon wafers. The SP in a PV cell is normally at 4.6 to 4.8V in the dark condition, but only at about 4.4V at a crack. The impact of the cracks in PV cells varies with the status of the surface, which may behave as an open circuit or a current drain. The average of SP difference between the light and dark conditions in a PV cell is at 350mV. However, the SP difference reduces to 250mV at an open crack or less than 70mV at a shunted crack. The cracks in PV cells would lead to a power loss in both cases.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127180417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface treatment of CIS solar cells grown under Cu-excess 超铜环境下CIS太阳能电池的表面处理

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6185953

V. Deprédurand, Y. Aida, J. Larsen, T. Eisenbarth, A. Majerus, S. Siebentritt

{"title":"Surface treatment of CIS solar cells grown under Cu-excess","authors":"V. Deprédurand, Y. Aida, J. Larsen, T. Eisenbarth, A. Majerus, S. Siebentritt","doi":"10.1109/PVSC.2011.6185953","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6185953","url":null,"abstract":"High-efficiency devices based on Cu(In, Ga)Se2 (CIGS) use an overall Cu-poor absorber. However, all the electronic properties (defect densities, transport properties, bulk recombination) are better in material that was grown under Cu-excess. Therefore the objective of this work is to make even better solar cells from \"Cu-rich\" absorbers. In all Cu-poor chalcopyrite based solar cells, the limiting factor for the open circuit voltage is the recombination in the space charge region whereas for the ones based on \"Cu-rich\" absorbers it is dominated by recombination at the interface. In this work, pure CuInSe2 (CIS) absorbers without Ga are grown under Cu-excess by coevaporation. After removal of the CuxSe secondary phase we obtain single phase material. In order to achieve interfaces that do not dominate the recombination, the surface was made Cu-poor by deposition of indium and Se and annealing in selenium vapor. The cell performance was remarkably improved by using this surface treatment and a 13% efficient solar cell was achieved using \"Cu-rich\" absorbers compared to 14% achieved with Cu-poor absorbers in a standard 3-stage process. In addition to classical characterization of the cell (IV and IVT, QE), the electronic structure of the surfaces and interfaces are investigated by photoluminescence, Auger electron spectroscopy and capacitance-voltage measurements, which show that it is indeed possible to keep a stoichiometric absorber while making the surface Cu-poor.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125096733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 17

Plasmonic core-shell nanoparticle enhanced optical absorption in thin film organic solar cells 等离子体核壳纳米粒子增强薄膜有机太阳能电池的光吸收

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186103

Di Qu, Fang Liu, Xujie Pan, Jiafan Yu, Xiangdong Li, Wanlu Xie, Qi Xu, Yidong Huang

{"title":"Plasmonic core-shell nanoparticle enhanced optical absorption in thin film organic solar cells","authors":"Di Qu, Fang Liu, Xujie Pan, Jiafan Yu, Xiangdong Li, Wanlu Xie, Qi Xu, Yidong Huang","doi":"10.1109/PVSC.2011.6186103","DOIUrl":"https://doi.org/10.1109/PVSC.2011.6186103","url":null,"abstract":"Utilizing plasmonic metal nanoparticles is considered as one of the promising methods for increasing the conversion efficiency in thin film organic solar cells. However, the bare metal nanoparticles may suffer from the energy loss introduced by themselves due to the recombination of electro-hole pairs. In this paper, the optical absorption enhancement of thin film organic solar cells with plasmonic metal-dielectric core-shell nano-particles in the active layer has been proposed and studied. It is expected that the metal core could increase the optical absorption, and consequently the conversion efficiency of thin film organic solar cells due to the localized surface plasmon based field enhancement effect, and meanwhile the dielectric shell could prevent the metal core becoming a new bulk recombination center of the light-induced excitons. Simulations are carried out by means of the finite element method in a three-dimensional model. The results show that the absorption enhancement up to 110% could be obtained when the active layer thickness is 30nm. And there is a largest thickness for the active layer, below which plasmonic metal-dielectric core-shell nanoparticles are available for increasing the light absorption of thin film organic solar cells. Then, some initial experiments have been done. The Au-citrate core-shell nanoparticles synthesized by the sodium citrate reduction method are deposited on the wafer-based silicon solar cells. And the obvious photocurrent enhancement has been observed.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125164449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Assessing the reliability and degradation of ribbon in photovoltaic module 光伏组件色带可靠性及退化评估

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186609

Chiu-Hua Huang, Liu-De Chih, Yi-Chia Chen, Ming-Yuan Huang, Zhen-Cheng Wu, Shyuan-Jeng Ho

引用次数: 1

Thin film and crystalline technology competitiveness, past, present and future forecast 薄膜和晶体技术竞争力，过去，现在和未来的预测

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186633

P. Mints

引用次数: 4

High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD 工业规模微波PECVD沉积氢化非晶氮化硅制备低电阻率p型C-Si的高质量表面钝化

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186223

Shubha Gupta, B. Hoex, F. Lin, T. Mueller, A. Aberle

引用次数: 6

Progress of the PV Technology Incubator project towards an enhanced U.S. manufacturing base 加强美国制造业基地的光伏技术孵化器项目进展情况

2011 37th IEEE Photovoltaic Specialists Conference Pub Date : 2011-06-19 DOI: 10.1109/PVSC.2011.6186640

H. Ullal, R. Mitchell, B. Keyes, K. VanSant, B. von Roedern, M. Symko-Davies, V. Kane

引用次数: 1