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2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)最新文献

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Single-Event Transient Test Results and Comparison for the Intersil ISL73141SEH Precision SAR ADC Intersil ISL73141SEH精密SAR ADC单事件瞬态测试结果及比较
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857683
J. Harris, L. Pearce, N. V. van Vonno, E. Thomson
{"title":"Single-Event Transient Test Results and Comparison for the Intersil ISL73141SEH Precision SAR ADC","authors":"J. Harris, L. Pearce, N. V. van Vonno, E. Thomson","doi":"10.1109/RADECS50773.2020.9857683","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857683","url":null,"abstract":"We report the results of nondestructive single-event transient (SET) testing of the Intersil ISL 73141SEH 14-bit 750/1000ksps precision SAR ADC.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129980843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Testing of COTS Operational Amplifier in the Framework of the ESA CORHA Study ESA CORHA研究框架下COTS运算放大器的测试
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857692
Christoph Tscherne, M. Wind, M. Bagatin, S. Gerardin, M. Latocha, A. Paccagnella, M. Poizat, P. Beck
{"title":"Testing of COTS Operational Amplifier in the Framework of the ESA CORHA Study","authors":"Christoph Tscherne, M. Wind, M. Bagatin, S. Gerardin, M. Latocha, A. Paccagnella, M. Poizat, P. Beck","doi":"10.1109/RADECS50773.2020.9857692","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857692","url":null,"abstract":"We present total ionizing dose (TID) radiation test results for commercial operational amplifiers as part of the ESA CORHA study. The aim of the CORHA study is to investigate COTS components relevant for the space industry in general and nanosatellites and CubeSat applications in particular. The ESA CORHA study will use TID and SEE radiation test data as a basis for formulating an ad-hoc RHA approach for COTS components.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130747121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fault Mode Analysis of Neural Network-based Object Detection on GPUs with Neutron Irradiation Test 基于神经网络的gpu中子辐照目标检测故障模式分析
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857684
Yangchao Zhang, Kojiro Ito, Hiroaki Itsuji, T. Uezono, Tadanobu Toba, Masanori Hashimoto
{"title":"Fault Mode Analysis of Neural Network-based Object Detection on GPUs with Neutron Irradiation Test","authors":"Yangchao Zhang, Kojiro Ito, Hiroaki Itsuji, T. Uezono, Tadanobu Toba, Masanori Hashimoto","doi":"10.1109/RADECS50773.2020.9857684","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857684","url":null,"abstract":"Neural network-based (NN-based) object detection algorithms are often implemented and executed on Graph Pro-cessing Units (GPUs). Understanding the reliability and fault modes of NN-based object detection is indispensable to improve and guarantee system reliability. In this work, we measure and analyze the fault modes of NN-based object detection running on GPUs using a quasi-monoenergetic neutron beam. Experimental results show that there are burst fault modes that repeat the same silent data corruption (SDC) errors and induce variant SDC errors. While the repetitive burst-mode errors of 56% probably originate from upsets in NN model parameters, the root cause of the remaining variant burst errors of 44% is unknown.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123455462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cosmic ray immunity of COTS Normally-Off Power GaN FETs for space, aeronautic and automotive applications 用于航天、航空和汽车应用的COTS常关功率氮化镓场效应管的宇宙射线抗扰性
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857695
M. Zerarka, O. Crépel, C. Weulersse, S. Morand, C. Binois, M. Mazurek, G. Vignon, L. Serrano, F. Coccetti
{"title":"Cosmic ray immunity of COTS Normally-Off Power GaN FETs for space, aeronautic and automotive applications","authors":"M. Zerarka, O. Crépel, C. Weulersse, S. Morand, C. Binois, M. Mazurek, G. Vignon, L. Serrano, F. Coccetti","doi":"10.1109/RADECS50773.2020.9857695","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857695","url":null,"abstract":"The objective of this work is to characterize the SEE failure induced by heavy ion and neutron irradiations on commercial Normally-Off GaN technologies used in switching power conversion. It is mandatory for the Space, Aeronautic and Automotive industries to determine the radiation robustness of these new Commercial Off-The-Shelf (COTS) components in the operational and environmental conditions of their applications. Electrical behavior of Normally-Off GaN power transistors under heavy ion and neutron beams is presented to define the safe operating area (SOA) and analyze the mechanism of Single Event Effects (SEE). The results overall show great immunity for Normally -Off GaN FET against SEE induced by heavy ion with similarities between references but different failure mechanisms. SOA for neutrons and TID are relatively different between the studied technologies.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124086518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The General Chairman's Address 主席的讲话
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/radecs50773.2020.9857734
R. Ecoffet
{"title":"The General Chairman's Address","authors":"R. Ecoffet","doi":"10.1109/radecs50773.2020.9857734","DOIUrl":"https://doi.org/10.1109/radecs50773.2020.9857734","url":null,"abstract":"","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124165256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heavy Ion Irradiation Hardening Study on 4kb arrays HfO2-based OxRAM 4kb阵列hfo2基OxRAM的重离子辐照硬化研究
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857730
N. Guillaume, G. Lefévre, C. Charpin-Nicolle, L. Grenouillet, T. Vogel, N. Kaiser, E. Piros, S. Petzold, C. Trautmann, D. Sylvain, C. Vallée, L. Alff, E. Nowak
{"title":"Heavy Ion Irradiation Hardening Study on 4kb arrays HfO2-based OxRAM","authors":"N. Guillaume, G. Lefévre, C. Charpin-Nicolle, L. Grenouillet, T. Vogel, N. Kaiser, E. Piros, S. Petzold, C. Trautmann, D. Sylvain, C. Vallée, L. Alff, E. Nowak","doi":"10.1109/RADECS50773.2020.9857730","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857730","url":null,"abstract":"HfO2 based OxRAM devices integrated in Back End Of Line (BEOL) of 130nm CMOS have been exposed to extreme irradiation conditions related to extensive journey in space, supernova or nuclear disaster exposure: 1.635 GeV Au ion energy and very high fluences, from $10^{9}text{ions}/text{cm}^{2}$ to $10^{12}text{ions}/text{cm}^{2}$. Single resistive devices as well as 4kbit 1T1R arrays have been studied, showing a very good resilience up to a fluence of $5.10^{10}text{ions}/text{cm}^{2}$. For higher fluences, the degradation of access transistors is identified as the main source for information loss. Without access transistor, single 1R devices were demonstrated to be functional even at the highest fluence of $10^{12}text{ions}/text{cm}^{2}$. TEM, EDX and nano diffraction analyses show no change in the HfO2 material, as well as in the repartition of the element in the layers, whatever the fluence. This is in agreement with quantum mechanical simulation performed. These results demonstrate the OxRAM structure is resilient to extreme irradiation conditions.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117251138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray 伽马辐照对先进Si/SiGe:C BiCMOS技术的影响:与x射线的比较
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857722
J. El Beyrouthy, B. Sagnes, F. Pascal, M. Elsherif, J. Boch, T. Maraine, S. Haendler, P. Chevalier, D. Gloria
{"title":"Impact of Gamma irradiation on advanced Si/SiGe:C BiCMOS technology: comparison versus X-ray","authors":"J. El Beyrouthy, B. Sagnes, F. Pascal, M. Elsherif, J. Boch, T. Maraine, S. Haendler, P. Chevalier, D. Gloria","doi":"10.1109/RADECS50773.2020.9857722","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857722","url":null,"abstract":"Gamma irradiation effects are investigated on Si/SiGe:C HBTs developed with the latest BiCMOS technologies. Unbiased HBTs are irradiated with a Co60source until in a Total Ionizing Dose of 330 krad. Irradiation effects are evaluated by measuring the excess base current from DC characteristics (Gummel plot) and the base current spectral density from Low Frequency Noise measurements, mainly by analyzing the 1/f noise level. Degradation comparison on two advanced BiCMOS technologies is done. The recent generation of the technology presents the highest robustness. Moreover, a comparison of the degradation induced by the Gamma source with an earlier study using an X-ray source is held.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115320934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CTTB Memory Test Board Single Event Effect Geostationary in-flight Data Analysis CTTB记忆测试板单事件效应地球静止飞行数据分析
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857705
M. Pinto, J. M. Sampaio, L. Arruda, P. Gonçalves, P. Ribeiro, T. Sousa, C. Poivey, S. Bounasser
{"title":"CTTB Memory Test Board Single Event Effect Geostationary in-flight Data Analysis","authors":"M. Pinto, J. M. Sampaio, L. Arruda, P. Gonçalves, P. Ribeiro, T. Sousa, C. Poivey, S. Bounasser","doi":"10.1109/RADECS50773.2020.9857705","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857705","url":null,"abstract":"The CTTB aboard the Alphasat in geostationary orbit carried a SEU monitor, a SEL monitor and a NAND-Flash memory for technology demonstration. Here we present the in-flight data analysis of all memories.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124836595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the Improvement of VCO Based Matrix Particle Detector for High Resolution Particles Recognition and Tracking 基于VCO的矩阵粒子检测器在高分辨率粒子识别与跟踪中的改进
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857723
K. Coulié, W. Rahajandraibe, L. Ottaviani
{"title":"On the Improvement of VCO Based Matrix Particle Detector for High Resolution Particles Recognition and Tracking","authors":"K. Coulié, W. Rahajandraibe, L. Ottaviani","doi":"10.1109/RADECS50773.2020.9857723","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857723","url":null,"abstract":"A particle detection chain based on a CMOS-SOI VCO circuit associated to a matrix of detection is presented. The solution is used for the recognition and tracking of an alpha particle.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125352294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
True Dose Rate Effect of the ELDRS Conversional Model ELDRS转换模型的真剂量率效应
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI: 10.1109/RADECS50773.2020.9857689
V. Pershenkov, Alexander S. Zhukov, V. Belyakov, A. Bakerenkov, V. Telets, V. Felitsyn, A. Rodin
{"title":"True Dose Rate Effect of the ELDRS Conversional Model","authors":"V. Pershenkov, Alexander S. Zhukov, V. Belyakov, A. Bakerenkov, V. Telets, V. Felitsyn, A. Rodin","doi":"10.1109/RADECS50773.2020.9857689","DOIUrl":"https://doi.org/10.1109/RADECS50773.2020.9857689","url":null,"abstract":"The possible physical mechanism of true dose rate effect is described using ELDRS conversional model. The effect of the oxide trapped charge on the value of the oxide electric field is taken into account.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121076005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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