V. Atuchin, L. Isaenko, V. Kesler, Zheshuai Lin, S. Lobanov
{"title":"Exploration of optical and electronic parameters of lithium thiogallate (LiGaS2)","authors":"V. Atuchin, L. Isaenko, V. Kesler, Zheshuai Lin, S. Lobanov","doi":"10.1109/EDM.2011.6006881","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006881","url":null,"abstract":"Electronic and optical properties of the infrared crystal LiGaS2 are studied by both experimental and theoretical methods. Based on the X-ray photoelectron spectros-copy measurements, the electronic structures of Ga 3d orbitals are corrected by the GGA+U methods. Linear and nonlinear optical parameters of LiGaS2 are determined by the first-principles theory and compared with earlier published experimental results. Good agreement is obtained between theoretical and experimental parameters.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129888163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Linux-based test-bed for testing of QoS subsystems in broadband wireless networks","authors":"I. Boichenko, E. V. Bortnikov","doi":"10.1109/EDM.2011.6006953","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006953","url":null,"abstract":"An overview of the standard IEEE 802.16 (WiMAX) in part concerning the quality of service (QoS) is provided in the article. A test bed for the testing of QoS algorithms in broadband wireless networks has been designed and implemented. The article illustrates the results of testing QoS algorithms for certain types of service flows are presented.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129894404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Copper Germanium alloys formation by low temperature atomic hydrogen treatment","authors":"A. Kazimirov, E. Erofeev, V. A. Kagadei","doi":"10.1109/EDM.2011.6006889","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006889","url":null,"abstract":"The behavior of the two-layer thin-film Cu/Ge system deposited on i-GaAs substrate at treatment in atomic hydrogen was investigated. It was found that such processing in an atomic hydrogen flow with density 1015 at. cm2 s−1 at room temperature for 5 min leads to the solid state interdiffusion of Cu and Ge thin films and poly-crystalline CuGe alloy formation with the vertically oriented grains.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130592415","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Khmelev, R. Barsukov, D. V. Genne, D. Abramenko, E. V. Ilchenko, A. Shalunov
{"title":"Practical investigations of the method for indirect control of acoustic load parameters","authors":"V. Khmelev, R. Barsukov, D. V. Genne, D. Abramenko, E. V. Ilchenko, A. Shalunov","doi":"10.5539/APR.V3N2P224","DOIUrl":"https://doi.org/10.5539/APR.V3N2P224","url":null,"abstract":"Article is devoted to testing of the method for indirect control of acoustic load parameters. The results of measurement of acoustic load parameters are presented.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125646735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Grossman, V. Atuchin, B. Bazarov, O. D. Chimitova, T. Gavrilova, Z. G. Bazarova, N. V. Surovtsev
{"title":"Synthesis, structural and vibrational properties of rare-earth molybdates MNd(MoO4)2 (M=Rb, Tl) and TlPr(MoO4)2","authors":"V. Grossman, V. Atuchin, B. Bazarov, O. D. Chimitova, T. Gavrilova, Z. G. Bazarova, N. V. Surovtsev","doi":"10.1109/EDM.2011.6006884","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006884","url":null,"abstract":"Microcrystals of MNd(MoO<inf>4</inf>)<inf>2</inf> (M=Rb, Tl) and TlPr(MoO<inf>4</inf>)<inf>2</inf> have been formed with solid state synthesis by the same synthesis route. Final products have been studied by XRD and SEM. Vibrational properties have been evaluated with Raman spectroscopy. More than 20 narrow Raman lines were observed in the experimental spectrum of the microcrystals.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125730586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Power consumption reduction for configuration SRAM of field programmable gate arrays","authors":"Denis V. Matyushin, Sergei I. Kurganskii","doi":"10.1109/EDM.2011.6006917","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006917","url":null,"abstract":"This article describes a method of reducing power consumption for configuration SRAM cells. Modification of the SRAM cell is performed taking into account special characteristics of FPGA configuration memory. Characteristics of the cells are summarized.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129608903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Khmelev, S. Khmelev, S. N. Tsyganok, G. A. Titov
{"title":"Ultrasonic drying of birch veneer","authors":"V. Khmelev, S. Khmelev, S. N. Tsyganok, G. A. Titov","doi":"10.1109/EDM.2011.6006973","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006973","url":null,"abstract":"The article is devoted to studying of drying veneer process under the influence of high-intensity ultrasonic vibrations. The advantages of veneer ultrasonic drying and possibilities of its practical realization are described. Ultrasonic drier of veneer that can be applied for ultrasonic drying process was proposed and developed","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126102953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
I. A. Kotin, I. Antonova, R. Soots, V. Volodin, V. Prinz
{"title":"Graphene-N-methylpyrrolidone based hybrid material: Tunable structural and electrical properties","authors":"I. A. Kotin, I. Antonova, R. Soots, V. Volodin, V. Prinz","doi":"10.1109/EDM.2011.6006893","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006893","url":null,"abstract":"Possibility to create the hybrid structures based on graphene and N-methylpyrrolidone (NMP) is demonstrated in the report. Properties of these structures such as conductivity, carrier mobility, band gap value are found to strongly depend on fabrication temperature.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129856929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"LED lighting","authors":"N. N. Bakin, V. I. Tuyev, Eduard F. Yauk","doi":"10.1109/edm.2011.6006944","DOIUrl":"https://doi.org/10.1109/edm.2011.6006944","url":null,"abstract":"The paper states the goals and tasks, presents the intermediate results of the complex project aimed at creation of the high-tech production facility \"Development of high-efficient and reliable semiconductor light sources and lighting devices, and organization of their series production”, performed by JSC Federal Research Institute of Semiconductors and the Tomsk State University of Control Systems and Radioelectronics.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116493992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Broadband attenuator","authors":"V. S. Churkin, M. Rubanovich, V. Razinkin","doi":"10.1109/edm.2011.6006955","DOIUrl":"https://doi.org/10.1109/edm.2011.6006955","url":null,"abstract":"This article presents the results obtained from research and development of the broadband attenuator based on Chebyshev filter with dissipative losses. It is shown that design of this attenuator on the basis of microstrip technology ensures the uniform amplitude-frequency characteristic and low standing wave ratio in a broad frequency band. The proposed attenuator can be used for analysis and monitoring of output signal parameters in radio transmitting devices of communication systems.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124506679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}