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2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings最新文献

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Method of acoustic load control 声载荷控制方法
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006959
V. Khmelev, R. Barsukov, D. V. Genne, D. Abramenko, E. V. Ilchenko
{"title":"Method of acoustic load control","authors":"V. Khmelev, R. Barsukov, D. V. Genne, D. Abramenko, E. V. Ilchenko","doi":"10.1109/EDM.2011.6006959","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006959","url":null,"abstract":"The problems of indirect determination of parameters, which are directly connected with the value and the character of acoustic resistance of the media exposed to ultrasound, are discussed. This method for control of acoustic media parameters is based on control of electric parameters of ultrasonic vibrating systems, which are in contact with the processed technological media.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133260662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Experimental estimation of accuracy enhancement of TOA measurement by communication system in case of multichannel processing 多信道处理下通信系统提高TOA测量精度的实验估计
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006927
A. S. Vershinin, E. Voroshilin, E. Rogozhnikov, D. Korotkov, Denis Y. Maikov
{"title":"Experimental estimation of accuracy enhancement of TOA measurement by communication system in case of multichannel processing","authors":"A. S. Vershinin, E. Voroshilin, E. Rogozhnikov, D. Korotkov, Denis Y. Maikov","doi":"10.1109/EDM.2011.6006927","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006927","url":null,"abstract":"Two methods of the multichannel processing, which allow to enhance the accuracy of time-of-arrival (TOA), were considered. TOA has been found by the threshold method at the level of detection threshold. The experimental results have been processed, and the statistical characteristics of the estimates of RF pulse TOA have been obtained.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130749238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of surface treatment of SOI-nanowire sensors soi纳米线传感器表面处理的优化
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006910
N. F. Malyarenko, O. Naumova, E. D. Zhanaev, V. Popov
{"title":"Optimization of surface treatment of SOI-nanowire sensors","authors":"N. F. Malyarenko, O. Naumova, E. D. Zhanaev, V. Popov","doi":"10.1109/EDM.2011.6006910","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006910","url":null,"abstract":"Several types of chemical treatment aimed at removing surface contamination and stabilizing charge state of SOI-NW sensors were tested. The effective charge on the surface allowing to select the optimal treatment of the sensor surface after prolonged storage was selected.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134221538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanotechnologies in development of solar cells 纳米技术在太阳能电池发展中的应用
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006934
I. Neizvestny
{"title":"Nanotechnologies in development of solar cells","authors":"I. Neizvestny","doi":"10.1109/EDM.2011.6006934","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006934","url":null,"abstract":"The article presents one of the ways to improve characteristics of silicon solar cells — replacement of planar p-n junctions by array of nanowires (nanorods, nanowhiskers) located perpendicular to the substrate.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"233 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134517915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical microchannel silicon sensor for solvent detection 用于溶剂检测的电子微通道硅传感器
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006919
M. A. Parashchenko, Natalia V. Vandisheva, V. Kirienko, N. Filippov, S. I. Romanov
{"title":"Electrical microchannel silicon sensor for solvent detection","authors":"M. A. Parashchenko, Natalia V. Vandisheva, V. Kirienko, N. Filippov, S. I. Romanov","doi":"10.1109/EDM.2011.6006919","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006919","url":null,"abstract":"This paper has been devoted to creation of the sensor based on ordered microchannel silicon resistor for electrophysical detection of liquids. Interactions of sensor with organic and inorganic liquids (acetic acid, ammonium hydroxide, ethyl alcohol, water-alcohol solution and deionized water) were studied by high frequency conductance measurements. It was established that the sensor had specific response for each liquid. It was shown that the proposed electrophysical method allowed identifying the liquid interacted with the sensor.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126538102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Monitoring of objects hidden from observation by stray lighting 通过杂散照明对隐藏的物体进行监视
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006937
F. Gubarev, G. Evtushenko, M. Trigub, S. Torgaev
{"title":"Monitoring of objects hidden from observation by stray lighting","authors":"F. Gubarev, G. Evtushenko, M. Trigub, S. Torgaev","doi":"10.1109/EDM.2011.6006937","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006937","url":null,"abstract":"The paper presents state of the art for laser projection microscopes and their application for monitoring objects and processes hidden from view of an observer by a layer of bright luminous plasma. We show the possibility of registration of an image, which is obtained using laser projection microscope and is formed by a single pulse of the optical amplifier. Laser monitor based on CuBr-laser with a frame-by-frame imaging has been used for the first time. The paper presents the results of visualization of the process of self-propagating high-temperature synthesis, which is attended by intense stray lighting in real-time mode using synchronizing system of an optical amplifier and a highspeed camera.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131458827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of RHEED observing conditions of quantum dots by numerical simulation 量子点RHEED观测条件的数值模拟优化
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006907
D. Kazantsev, Y. Galitsyn
{"title":"Optimization of RHEED observing conditions of quantum dots by numerical simulation","authors":"D. Kazantsev, Y. Galitsyn","doi":"10.1109/EDM.2011.6006907","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006907","url":null,"abstract":"The dependence of the RHEED relative intensity of quantum dots on the observing conditions was studied by numerical simulation within the kinematic approximation. Optimum angles of the electron beam incidence and the sample rotation were determined. Common observing conditions are shown to be not optimal to obtain faceting of quantum dots.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122999205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bolometer at semiconductor-metal phase transition in VO2 thin films VO2薄膜中半导体-金属相变的测热计
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006913
V. Aliev, S. G. Bortnikov
{"title":"Bolometer at semiconductor-metal phase transition in VO2 thin films","authors":"V. Aliev, S. G. Bortnikov","doi":"10.1109/EDM.2011.6006913","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006913","url":null,"abstract":"A double ion beam sputtering deposition method was used for fabricating bolometric structure based on poly-crystalline VO2 film. A sensitivity of bolometric structure to infrared (IR) radiation at semiconductor-metal phase transition (SMPT) was observed. It has been established that temperature coefficient of resistance (TCR) in phase transition region is 10 times higher of such value at room temperature and resistance of bolometric structure is 25 times lower.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123087192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Three-phase transformerless boost multilevel inverter with one DC voltage source 一个直流电压源的三相无变压器升压多电平逆变器
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006982
N. Lopatkin
{"title":"Three-phase transformerless boost multilevel inverter with one DC voltage source","authors":"N. Lopatkin","doi":"10.1109/EDM.2011.6006982","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006982","url":null,"abstract":"Among the recent proposed circuits of the transformerless boost multilevel voltage source inverters based on the concept of the “Marx converter”, three-phase transformerless multilevel inverter with one DC voltage source is presented.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"282 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123437924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The optical system for the three-channel pyrometric device of two spectral ratios 光学系统为双光谱比的三通道高温测量装置
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI: 10.1109/EDM.2011.6006946
E. Sypin, N. Tupikina, E. S. Povernov
{"title":"The optical system for the three-channel pyrometric device of two spectral ratios","authors":"E. Sypin, N. Tupikina, E. S. Povernov","doi":"10.1109/EDM.2011.6006946","DOIUrl":"https://doi.org/10.1109/EDM.2011.6006946","url":null,"abstract":"The article describes the possible implementation scheme for the three-channel optical pyrometric device of two spectral ratios. For device designing preference is given to the scheme with interference bandpass optical filters. In addition to this, dimensional analysis of the optical system was fulfilled and preliminary values of the optical filter sizes, optical filters arrangement and photodetectors arrangement were obtained.","PeriodicalId":369789,"journal":{"name":"2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130564214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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