低温原子氢处理制备铜锗合金

2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings Pub Date : 2011-08-30 DOI:10.1109/EDM.2011.6006889

A. Kazimirov, E. Erofeev, V. A. Kagadei

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引用次数: 0

摘要

研究了原子氢处理下沉积在i-GaAs衬底上的两层Cu/Ge薄膜体系的行为。在密度为1015at的原子氢流中发现了这一过程。cm2 s−1在室温下作用5 min, Cu和Ge薄膜在固相中相互扩散，形成晶粒垂直取向的多晶CuGe合金。

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Copper Germanium alloys formation by low temperature atomic hydrogen treatment

The behavior of the two-layer thin-film Cu/Ge system deposited on i-GaAs substrate at treatment in atomic hydrogen was investigated. It was found that such processing in an atomic hydrogen flow with density 1015 at. cm2 s−1 at room temperature for 5 min leads to the solid state interdiffusion of Cu and Ge thin films and poly-crystalline CuGe alloy formation with the vertically oriented grains.

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2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings

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