13th International Reliability Physics Symposium最新文献_第2页

Sodium Ions at Defect Sites at SiO2/Si Interfaces as Determined by X-Ray Photoelectron Spectroscopy 用x射线光电子能谱测定SiO2/Si界面缺陷部位的钠离子

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362671

F. Grunthaner, J. Maserjian

引用次数: 3

Induced Passivation Defect Study 诱导钝化缺陷研究

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362685

R. Berger, A. Gregoritsch

{"title":"Induced Passivation Defect Study","authors":"R. Berger, A. Gregoritsch","doi":"10.1109/IRPS.1975.362685","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362685","url":null,"abstract":"An n-channel FET memory array chip whose quartz passivation layer is purposely disrupted in specific-nonrandom locations is used to study the propensity of these induced defects to fail due to localized inversion of the silicon surface stemming from positive ions contained within the defect which are residual from processing. Two distinct sizes of induced defects are considered; three and seven micron diamters; 800 of the larger size and 100 of the smaller. Vertical structures range from shallow indentations to holes completely-through the passivation layer thus exposing the underlying silicon. Positive ionic contamination is introduced into the defects via an overcoat of photoresist whose positive ionic species and levels are known. Accelerated temperature and voltage life stresses are performed. Temperatures employed are 85 and 150°C, while voltage levels (and E field) across the defect are nominal and twice nominal. Data obtained from these temperature/voltage accelerated stresses is presented which shows time-to-fail is related to the ionic (mostly sodium) levels contained within the defects. Voltage acceleration was found to be a nonlinear function while temperature follows the standard Arrhenius model with an activation energy of 1.1 eV. Hole size was found to be at best a second order effect on time-to-fail. High temperature no bias bake-out at 150°C for 48 hours was performed. Percent inversion is seen to decrease by approximately an order of magnitude in all cases.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128993670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Analysis of Deposited Glass Layer Defects 沉积玻璃层缺陷分析

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362686

J. J. Bart

引用次数: 0

A Study of the Dielectric Breakdown of Thermally Grown SiO2 by the Self-Quenching Technique 热生长SiO2介电击穿的自猝灭研究

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362670

D. Yang, W. C. Johnson, M. Lampert

引用次数: 2

Effects of Fast Temperature Cycling on Aluminum and Gold Metal Systems 快速温度循环对铝和金金属系统的影响

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362684

A. Macpherson, W. Weisenberger, H. Day, A. Christou

引用次数: 4

Determination of Useful Life of Two-Layer Metallization Systems Via Accelerated Stressing 加速应力法测定两层金属化体系的使用寿命

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362707

N. W. VanVonno

引用次数: 0

An Electrical Technique for the Measurement of the Peak Junction Temperature of Power Transistors 一种测量功率晶体管峰值结温的电气技术

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362688

D. Blackburn

{"title":"An Electrical Technique for the Measurement of the Peak Junction Temperature of Power Transistors","authors":"D. Blackburn","doi":"10.1109/IRPS.1975.362688","DOIUrl":"https://doi.org/10.1109/IRPS.1975.362688","url":null,"abstract":"A technique is described which uses straightforward electrical measurement procedures to determine the peak junction temperature of power transistors. To determine the peak temperature, standard electrical measurement techniques are altered to account for the difference between the distributions of the calibration and measurement currents in the active area of the device. For relatively uniform temperature distributions, the electrically determined peak junction temperature is only about 6% or less below the infrared measured peak temperature whereas the standard electrically measured temperature is about 10 to 25% below the infrared measured peak temperature. For severely non-uniform temperature distributions, when only about 20% of the total active area of the device is dissipating power at steady state, the electrically determined peak temperature is within 11% of the infrared measured peak temperature while the standard electrically measured temperature is more than 40% below the infrared measured peak temperature. Device operating conditions for which the junction temperature as determined by standard electrical methods, infrared techniques, and the electrical peak temperature technique equals the manufacturer's specified maximum safe operating temperature are compared with one another and with the manufacturer's specified safe operating limits. It is suggested that the electrical peak temperature technique can be used to generate more realistic safe operating area limits and to determine the validity of specified safe operating limits of power transistors.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123979842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 35

Reliability of Microwave Gallium Arsenide Field Effect Transistors 微波砷化镓场效应晶体管的可靠性

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362694

S. Bellier, R. Haythornthwaite, J. L. May, P. J. Woods

引用次数: 4

Early Appreciation in Zinc-Diffused GaAs Electroluminescent Infrared Diodes 锌扩散砷化镓电致发光红外二极管的初步研究

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362696

R. Hamaker, J. Laskowski, R. J. Segalla, J. Franco

引用次数: 2

Failure Mechanisms in Pulsed RF Power Transistors 脉冲射频功率晶体管的失效机制

13th International Reliability Physics Symposium Pub Date : 1975-04-01 DOI: 10.1109/IRPS.1975.362692

R. Soukup, L. Collingwood

引用次数: 2