2009 IEEE MTT-S International Microwave Workshop Series on Signal Integrity and High-Speed Interconnects最新文献

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Impact of ULK Dielectric Loss on Interconnect Response for 45 nm Node Integrated Circuits ULK介电损耗对45nm节点集成电路互连响应的影响
S. de Rivaz, T. Lacrevaz, M. Gallitre, A. Farcy, B. Blampey, C. Bermond, B. Fléchet
{"title":"Impact of ULK Dielectric Loss on Interconnect Response for 45 nm Node Integrated Circuits","authors":"S. de Rivaz, T. Lacrevaz, M. Gallitre, A. Farcy, B. Blampey, C. Bermond, B. Fléchet","doi":"10.1109/IMWS.2009.4814921","DOIUrl":"https://doi.org/10.1109/IMWS.2009.4814921","url":null,"abstract":"New materials such as dielectrics with ultra low permittivity are required to improve interconnect performance for future IC's technology nodes. Porous dielectric materials, as SiOCH, used for the 45 nm technology are very prone to damage during integration process, degrading their permittivity and severely increasing their loss tangent. Theses dielectric losses have to be precisely taken into account in order to accurately simulate the propagation effects along interconnects and to predict delay and crosstalk. Thus fine large-band extraction of complex permittivity must be achieved in respect to physical consistence of signals. This study aims at accurately evaluate the impact of dielectric degradation on interconnects electrical performance. Moreover it will be outlined, using two different IC's configurations, that the accurately on the prediction of interconnect performance needs adequate dielectric models.","PeriodicalId":368866,"journal":{"name":"2009 IEEE MTT-S International Microwave Workshop Series on Signal Integrity and High-Speed Interconnects","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130491786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Neural Network Techniques for High-Speed Electronic Component Modeling 高速电子元件建模的神经网络技术
Qi-jun Zhang, Lei Zhang
{"title":"Neural Network Techniques for High-Speed Electronic Component Modeling","authors":"Qi-jun Zhang, Lei Zhang","doi":"10.1109/IMWS.2009.4814911","DOIUrl":"https://doi.org/10.1109/IMWS.2009.4814911","url":null,"abstract":"This paper provides an overview of neural network applications for high-speed electronic component modeling. Two neural network techniques, an electromagnetic (EM)-based neural modeling approach and a state-space dynamic neural network method, are presented. Accurate neural models are obtained to represent behaviors of EM component and nonlinear circuit. The neural models are used in signal integrity design of high-speed integrated circuits, helping to improve efficiency in circuit simulation and optimization.","PeriodicalId":368866,"journal":{"name":"2009 IEEE MTT-S International Microwave Workshop Series on Signal Integrity and High-Speed Interconnects","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114875032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High Frequency SU-8 Based Transmission Line for 3-D Millimeter-wave Antennas 基于高频SU-8的三维毫米波天线传输线
Sae-Won Lee, A. Parameswaran, R. Vaughan, A. Mahanfar
{"title":"High Frequency SU-8 Based Transmission Line for 3-D Millimeter-wave Antennas","authors":"Sae-Won Lee, A. Parameswaran, R. Vaughan, A. Mahanfar","doi":"10.1109/IMWS.2009.4814918","DOIUrl":"https://doi.org/10.1109/IMWS.2009.4814918","url":null,"abstract":"A fabrication method and characterization of transmission lines for 3-D millimeter-wave antennas are presented using a polymer micro-electro-mechanical-systems (MEMS) fabrication process. The fabrication process steps are performed at low temperatures and are compatible for on-chip CMOS integration. Blanket metal deposition is applied to the wafer to coat the structures with Au and Cr and electrical isolation is achieved by anchor designs.","PeriodicalId":368866,"journal":{"name":"2009 IEEE MTT-S International Microwave Workshop Series on Signal Integrity and High-Speed Interconnects","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122799658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fast Space Mapping with Variable Weight Coefficients for Microwave Device Modeling 基于变权系数的微波器件快速空间映射建模
S. Koziel, J. Bandler
{"title":"Fast Space Mapping with Variable Weight Coefficients for Microwave Device Modeling","authors":"S. Koziel, J. Bandler","doi":"10.1109/IMWS.2009.4814913","DOIUrl":"https://doi.org/10.1109/IMWS.2009.4814913","url":null,"abstract":"We describe an improvement of a recent space mapping (SM) modeling approach that uses variable weight coefficients (SM-VWC). Our modification alleviates the main drawback of SM-VWC: the computational overhead related to a separate parameter extraction required for each evaluation of the surrogate model. In our new procedure, the output SM parameters of the surrogate model are obtained by solving a regression problem instead of being determined in the parameter extraction process. This dramatically reduces the evaluation time of the surrogate model. Moreover, the modeling accuracy of the modified technique is even better than the accuracy of the original SM-VWC approach. Examples demonstrate the robustness of our approach.","PeriodicalId":368866,"journal":{"name":"2009 IEEE MTT-S International Microwave Workshop Series on Signal Integrity and High-Speed Interconnects","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131362987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of the Configuration of Ground Vias on the Performance of Vertical Transitions Used in Electronic Packages 地过孔结构对电子封装中使用的垂直过渡性能的影响
S. C. Sejas-García, G. Romo, R. Torres‐Torres
{"title":"Impact of the Configuration of Ground Vias on the Performance of Vertical Transitions Used in Electronic Packages","authors":"S. C. Sejas-García, G. Romo, R. Torres‐Torres","doi":"10.1109/IMWS.2009.4814900","DOIUrl":"https://doi.org/10.1109/IMWS.2009.4814900","url":null,"abstract":"The ground vias are used to interconnect the different ground planes existing in a package structure, but also to prevent the propagation of parasitic modes like the parallel-plate mode inside the structure. From a signal integrity perspective, these parasitic modes degrade and limit the performance of a package since they introduce undesired resonances in the electrical response of the structure. Thus, the distribution of the ground vias is of great importance in the design of advanced packages. Using full-wave simulators, we have observed the distribution of the electric and magnetic fields as a high-frequency signal propagates through vertical transitions surrounded by ground vias. The information from the distribution of fields and the corresponding S-parameters were obtained from simulations for different configurations of ground vias in a vertical transition; these are the bases of the paper. The purpose of the presented analysis is to understand the relationship between the frequency at which the resonances associated with the propagation of parasitic modes occur and the configuration of the ground vias.","PeriodicalId":368866,"journal":{"name":"2009 IEEE MTT-S International Microwave Workshop Series on Signal Integrity and High-Speed Interconnects","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125545049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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