Functional DiamondPub Date : 2022-12-31DOI: 10.1080/26941112.2022.2157225
Ruoying Zhang, Yuting Zheng, Jinlong Liu, Chengming Li, Chengke Chen, Xiaojun Hu, Jinlong Li, Ran Liu, H. Ye
{"title":"Morphology-dependent antibacterial properties of diamond coatings","authors":"Ruoying Zhang, Yuting Zheng, Jinlong Liu, Chengming Li, Chengke Chen, Xiaojun Hu, Jinlong Li, Ran Liu, H. Ye","doi":"10.1080/26941112.2022.2157225","DOIUrl":"https://doi.org/10.1080/26941112.2022.2157225","url":null,"abstract":"Abstract Microorganisms promoted corrosion has caused significant loss to marine engineering and the antibacterial coatings have served as a solution that has gained attention. In this study, the chemical vapour deposition technique has been employed to grow three different types of diamond coatings, namely, ultrananocrystalline diamond (UNCD), nanocrystalline diamond (NCD), and microcrystalline diamond (MCD) coatings. The evolution of associated surface morphology and the surface functional groups of the grown coatings have demonstrated antibacterial activity in seawater environments. It is found that different ratio of sp3/sp2 carbon bonds on the diamond coatings influences their surface property (hydrophobic/hydrophilic), which changes the anti-adhesion behaviour of diamond coatings against bacteria. This plays a critical role in determining the antibacterial property of the developed coatings. The results show that the diamond coatings arising from the deposition process kill the bacteria via a combination of the mechanical effects and the functional groups on the surface of UNCD, NCD, and MCD coatings, respectively. These antibacterial coatings are effective to both Gram-negative bacteria (E. coli) and Gram-positive bacteria (B. subtilis) for 1–6 h of incubation time. When the contact duration is prolonged to 6 h or over, the MCD coatings begin to reduce the bacteria colonies drastically and enhance the bacteriostatic rate for both E. coli and B. subtilis.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127048986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Functional DiamondPub Date : 2022-12-31DOI: 10.1080/26941112.2022.2159775
Zhang Minghui, Wang Wei, Wen Feng, Lin Fang, Chen Genqiang, Wang Fei, He Shi, Wang Yanfeng, Fan Shuwei, Bu Renan, Min Tai, Yu Cui, Wang Hongxing
{"title":"Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer","authors":"Zhang Minghui, Wang Wei, Wen Feng, Lin Fang, Chen Genqiang, Wang Fei, He Shi, Wang Yanfeng, Fan Shuwei, Bu Renan, Min Tai, Yu Cui, Wang Hongxing","doi":"10.1080/26941112.2022.2159775","DOIUrl":"https://doi.org/10.1080/26941112.2022.2159775","url":null,"abstract":"Abstract Investigation of germanium gate hydrogen-terminated (H-terminated) diamond field effect transistor (FET) with Al2O3 dielectric layer has been successfully performed. The device demonstrates a normally-on characteristics, whose maximum drain-source current density, threshold voltage, maximum transconductance, on/off ratio, subthreshold swing, capacitance, carrier density, saturation carrier mobility, fixed charge density and interface state density are of −37.3 mA/mm, 0.22 V, 6.42 mS/mm, 108, 134 mV/dec, 0.33 μF/cm2, 9.83 × 1012 cm−2, 97.9 cm2/V·s, 7.63 × 1012 cm−2 and 2.56 × 1012 cm−2·eV−1, respectively. This work is significant to the development of H-terminated diamond FET.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123843793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Research progress of spectra and properties of ultrahard carbon materials at high pressure and high temperature","authors":"Zhiqiang Hou, Haikuo Wang, Yao Tang, Jiakun Wu, Chao Wang, Zhicai Zhang, X. Ouyang","doi":"10.1080/26941112.2022.2163857","DOIUrl":"https://doi.org/10.1080/26941112.2022.2163857","url":null,"abstract":"Abstract Carbon, the fourth most abundant element in the Universe, possesses numerous allotropes with diverse bonding character (sp 1-, sp 2- and sp 3-hybridized bonds) and structural motif of the constituting atoms. In particular, the carbon materials with a fully or nearly 100% sp 3-hybridized strong C-C bonds often lead to excellent mechanical properties, chemical stability, thermal and optical properties, such as crystalline diamond and diamond-like amorphous carbon (DLC). In this review, we systematically summarize the synthesis, microstructure, mechanical properties, thermal and optical properties of ultrahard carbon materials with current experimental results on nano-polycrystalline diamond (NPD), nanotwinned diamond (NTD), micro-grained polycrystalline diamond (MPD), and amorphous diamond/carbon. In addition, we discuss the difference of spectra of XRD, Raman and EELS between various nanocrystalline diamond powder and ultrahard carbon materials. Finally, we provide our insights into the future development and applications in the research of ultrahard carbon bulk materials by high-pressure and high-temperature techniques according to the current advantages, limitations and challenges in the experiment.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129199421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Functional DiamondPub Date : 2022-12-31DOI: 10.1080/26941112.2022.2066481
Mingchao Yang, T. Shimaoka, L. Sang, J. Kaneko, S. Koizumi, M. Liao
{"title":"Radiation effect of X-ray with 100 kGy dose on the electrical properties of MESFET based on hydrogen-terminated diamond surface conductivity","authors":"Mingchao Yang, T. Shimaoka, L. Sang, J. Kaneko, S. Koizumi, M. Liao","doi":"10.1080/26941112.2022.2066481","DOIUrl":"https://doi.org/10.1080/26941112.2022.2066481","url":null,"abstract":"Abstract The irradiation effect of X-ray on the electrical properties of Schottky-barrier diode (SBD) and metal-semiconductor field-effect transistors (MESFET) based on the surface conductivity of hydrogen-terminated single-crystal diamond (SCD) epilayers was investigated. The Ohmic contact was formed by a Pd/Ti/Au multilayer and the Schottky metal was Al thin film for the fabrication of the diamond SBDs and MESFETs. The X-ray irradiation was performed with a dose of 100 kGy. It was observed that both the forward current of the SBDs and the drain current of the MESFETs experienced a reduction after the X-ray irradiation. The type of the single-crystal diamond substrate had an obvious effect on the radiation properties. For the MESFETs on the type-Ib SCD substrate, the variation of the drain currents as the irradiation was inhomogeneous across the devices. For the MESFETs on the type-IIa SCD substrate, the reduction of the drain currents is more uniform and the threshold voltage changed little upon X-ray irradiation. The partial oxidation in the air of the exposure area in the device and the edge of the Al gate may be responsible for the degradation of the device performance under X-ray irradiation. The passivation technique with radiation-robustness is needed for diamond devices based on the surface conductivity of diamond.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121695660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Recent applications of fluorescent nanodiamonds containing nitrogen-vacancy centers in biosensing","authors":"Yuchen Feng, Qi Zhao, Yuxi Shi, Guanyue Gao, Jinfang Zhi","doi":"10.1080/26941112.2022.2153233","DOIUrl":"https://doi.org/10.1080/26941112.2022.2153233","url":null,"abstract":"Abstract Fluorescent nanodiamonds (FNDs) with nitrogen-vacancy (NV) centers have been extensively studied in numerous fields because of their distinct magneto-optical properties. The NV center is a perfect candidate for a nanosensor because of its stable photoluminescence and manipulable spin state by microwave/magnetic field. Considering the controllable sizes (5–100 nm), abundant surface groups, and good biocompatibility, FNDs are valuable in biosensing to study the physiological activity at the cellular scale. This review summarizes the recent applications of FNDs in detecting physiological parameters (such as temperature, pH) as well as proteins, free radicals, viruses, etc. Highlights include the development of FND-based biosensors and the NV center transduction system that responds to signal changes or concentrations fluctuations of target species.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125927535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Functional DiamondPub Date : 2022-12-08DOI: 10.1080/26941112.2022.2149279
S. Shikata
{"title":"Diamond dislocations analysis by X-ray topography","authors":"S. Shikata","doi":"10.1080/26941112.2022.2149279","DOIUrl":"https://doi.org/10.1080/26941112.2022.2149279","url":null,"abstract":"Abstract The dislocation identification method using X-ray topography by reflection mode geometry was applied to characterize IIa, Ib and highly B doped high pressure high temperature (HPHT) grown crystals. In both IIa and Ib crystals, dislocations are found to propagate in the <111> grown direction, with dominant vectors of [110] and [1-10], neither of which has no c-axis segment. For Ib crystal, many dislocations are also generated in the <112> and <121> directions, which are slightly tilted to <111>. It was confirmed that the dislocations in the same direction have the same Burgers vectors, but the dislocations are spread in broad area. A total of up to 20 HPHT crystals were measured and found to exhibit different dislocation distributions. This indicates an immature growth technique in terms of dislocation. Measurements of four chemical vapor deposition (CVD) substrates showed numerous dislocation bundles, making individual dislocation directions analysis impossible. CVD substrates suffer from an increase in dislocations due to CVD growth, resulting in poor diamond quality in terms of dislocation. XRT analysis on dislocations of epitaxial growth will be very important prior to CVD substrates analysis.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123936207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Functional DiamondPub Date : 2022-12-05DOI: 10.1080/26941112.2022.2151322
Anliang Lu, Limin Yang, C. Dang, Heyi Wang, Yang Zhang, Xiaocui Li, Hongti Zhang, Yang Lu
{"title":"Tuning diamond electronic properties for functional device applications","authors":"Anliang Lu, Limin Yang, C. Dang, Heyi Wang, Yang Zhang, Xiaocui Li, Hongti Zhang, Yang Lu","doi":"10.1080/26941112.2022.2151322","DOIUrl":"https://doi.org/10.1080/26941112.2022.2151322","url":null,"abstract":"Abstract Because of its ultrahigh hardness, synthetic diamond has been widely used in advanced manufacturing and mechanical engineering. As an ultra-wide bandgap semiconductor, on the other hand, diamond recently shows a great potential in electronics industry due to its outstanding physical properties. However, like silicon-based electronics, the electrical properties of diamond should be well modulated before it can be practically used in electronic devices. In this work, we briefly review the recent progresses in producing high-quality, electronic grade synthetic diamonds, as well as several typical strategies, from the conventional element doping to the emerging “elastic strain engineering,” (ESE) for tuning the electrical and functional properties of microfabricated diamonds. We also briefly show some device application demonstrations of diamond and outline some remaining challenges that are impeding diamond’s further practical applications as functional devices and offer some perspective for future functional diamond development.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129464759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Functional DiamondPub Date : 2022-12-01DOI: 10.1080/26941112.2022.2145508
Ayaka Kobayashi, Hazuki Tomiyama, Y. Ohno, Y. Shimizu, Y. Nagai, N. Shigekawa, Jianbo Liang
{"title":"Room-temperature bonding of GaN and diamond via a SiC layer","authors":"Ayaka Kobayashi, Hazuki Tomiyama, Y. Ohno, Y. Shimizu, Y. Nagai, N. Shigekawa, Jianbo Liang","doi":"10.1080/26941112.2022.2145508","DOIUrl":"https://doi.org/10.1080/26941112.2022.2145508","url":null,"abstract":"Abstract A GaN-on-diamond structure is the most promising candidate for improving the heat dissipation efficiency of GaN-based power devices. Room-temperature bonding of GaN and diamond is an efficient technique for fabricating this structure. However, it is extremely difficult to polish diamond to an average roughness (Ra) below 0.4 nm, especially for polycrystalline diamond. In this work, Room-temperature bonding of GaN and rough-surfaced diamond with a SiC layer was successfully achieved by a surface-activated bonding (SAB) method. The diamond surface’s initial Ra value was 0.768 nm, but after deposition of the SiC layer, the Ra decreased to 0.365 nm. The SiC layer formed at the as-bonded GaN/diamond interface was amorphous, with a thickness of about 7 nm. After annealing at 1000-°C, the amorphous SiC layer became polycrystalline, and its thickness increased to approximately 12 nm. These results indicate that the deposition of a SiC layer on diamond can efficiently lower the diamond surface’s roughness and thus facilitate room-temperature bonding.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126855497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Functional DiamondPub Date : 2022-11-21DOI: 10.1080/26941112.2022.2144769
F. Lu
{"title":"Past, present, and the future of the research and commercialization of CVD diamond in China","authors":"F. Lu","doi":"10.1080/26941112.2022.2144769","DOIUrl":"https://doi.org/10.1080/26941112.2022.2144769","url":null,"abstract":"Abstract It has been half of a century since the publication of the early reports about CVD diamond films in the world in the early 1970’s. The reports for meaningful laboratory growth of diamond films with much higher growth rate and higher quality could be found in the early 1980’s, under the so-called “Diamond Fever” initiated all over the world. In less than 10 years later, CVD diamond research had started in China as “863 Plan” (High Technology Research and Development Plan in China), a newly launched program in 1987. 35 years later, it is very interesting to explore what really happened to the CVD diamond in China. As a multi-functional material with a vast combination of extraordinary electrical, mechanical, thermal, optical, acoustic, and electro-chemistry properties, the CVD diamond has wide applications potentially in the field of multidiscipline high technologies. Therefore, this article aims to provide a general review on the CVD diamond by presenting a clearer picture about the history, the research status and its development, particularly the commercialization in China. Finally, the general trend in the near future is discussed.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131585607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Functional DiamondPub Date : 2022-10-03DOI: 10.1080/26941112.2022.2126950
J. Montes-Gutierrez, A. A. Gil-Salido, J. Alcantar-Peña, E. de Obaldía, R. García-Gutiérrez, O. Contreras-López, O. Auciello
{"title":"Viability and proliferation of A549 cell line on the surface of micro-, nano- and ultrananocrystalline diamond films grown by HFCVD with tailored gases","authors":"J. Montes-Gutierrez, A. A. Gil-Salido, J. Alcantar-Peña, E. de Obaldía, R. García-Gutiérrez, O. Contreras-López, O. Auciello","doi":"10.1080/26941112.2022.2126950","DOIUrl":"https://doi.org/10.1080/26941112.2022.2126950","url":null,"abstract":"Abstract This article describes key material science/technology issues to implement polycrystalline diamond scaffolds to enable processes for biological cells growth relevant for using cells grown in the laboratory for the treatment of human biological conditions. Issues investigated include 1. Synthesis/characterization of microcrystalline diamond (MCD), nanocrystalline diamond (NCD) and transformational ultrananocrystalline diamond (UNCD) coating-based scaffolds. Diamond films were grown on silicon substrates using the hot filament chemical vapor deposition (HFCVD) technique, by which filaments heated to ∼2,300 °C induce cracking of CH4 molecules into C atoms/CHx (x = 1, 2, 3) radicals, growing diamond films via chemical reaction on the substrates’ surface. MCD and NCD + films were grown flowing the H2/CH4 gas mixture. NCD- and UNCD films were grown using the Ar/CH4 gas mixture plus H2 flux (73.5%, 49%, and 9.8%), which for high fluxes, induced increased the concentration of H-containing trans-polyacetylene (T-PA) molecules in UNCD films’ grain boundaries, impacting biological performance. 2. Studies of viability and proliferation of human lung carcinoma cell line (A549) grown on surfaces of MCD, NCD, and UNCD films, using 3-[4,5-dimethylthiazol-2-yl]-2,5-diphenyl tetrazolium bromide (MTT) assay, which showed no significant difference in cell proliferation among the MCD, NCD, and UNCD films.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126064548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}