Functional Diamond最新文献

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Effect of defects on Q factors of single-crystal diamond MEMS resonators 缺陷对单晶金刚石MEMS谐振器Q因子的影响
Functional Diamond Pub Date : 2023-06-12 DOI: 10.1080/26941112.2023.2221280
Zilong Zhang, Guo Chen, Keyun Gu, S. Koizumi, M. Liao
{"title":"Effect of defects on Q factors of single-crystal diamond MEMS resonators","authors":"Zilong Zhang, Guo Chen, Keyun Gu, S. Koizumi, M. Liao","doi":"10.1080/26941112.2023.2221280","DOIUrl":"https://doi.org/10.1080/26941112.2023.2221280","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121115787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Tailoring optical emission of silicon-vacancy centers in two-dimensional diamond nanosheets via a two-step oxidation approach 利用两步氧化法剪裁二维金刚石纳米片中硅空位中心的光学发射
Functional Diamond Pub Date : 2023-05-17 DOI: 10.1080/26941112.2023.2211074
Bing Yang, Biao Yu, Jiaqi Lu, Haining Li, Zhaofeng Zhai, X. Guo, N. Huang, Lusheng Liu, Xin Jiang
{"title":"Tailoring optical emission of silicon-vacancy centers in two-dimensional diamond nanosheets via a two-step oxidation approach","authors":"Bing Yang, Biao Yu, Jiaqi Lu, Haining Li, Zhaofeng Zhai, X. Guo, N. Huang, Lusheng Liu, Xin Jiang","doi":"10.1080/26941112.2023.2211074","DOIUrl":"https://doi.org/10.1080/26941112.2023.2211074","url":null,"abstract":"Abstract Incorporating two-dimensional (2D) diamond nanosheets with fluorescent color centers exhibits great potential in the application of quantum sensing. However, color centers always show poor optical emission in chemical-vapor-deposited (CVD) diamond nanomaterials. To address this issue, Si doped diamond/graphite hybrid films were successfully fabricated in microwave-plasma CVD device. The films consist of diamond-core/graphite-shell nanosheets with high amount of diamond nanocrystalline particles. Two post treatments of acid oxidation and annealing in air were used to tailor photoluminescence (PL) of silicon-vacancy (SiV) centers. The SiV centers in the oxidized samples exhibit small PL increase compared with the as-deposited samples with SiV PL quenching. It is found that the graphite phase is selectively etched away with the presence of nanocrystalline diamond particles during the treatment of acid oxidation while the nanocrystalline diamond particles are efficiently removed with the presence of graphite using the air annealing method. Based on this result, a two-step approach of acid oxidation followed by air annealing was conducted to etch the non-diamond phase, forming diamond nanosheets. The SiV centers exhibit significant PL enhancement with a maximum value of 28 folds, compared with the single-step oxidized samples. The Raman and XPS results reveal that such PL increase originates from direct bonding of oxygen on the sp3 carbon. Therefore, our work provides a feasible approach to prepare 2D diamond nanosheets with high-brightness color centers.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128850935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
CVD diamond: a review on options and reality CVD金刚石:选择与现实的回顾
Functional Diamond Pub Date : 2023-04-24 DOI: 10.1080/26941112.2023.2201592
C. Nebel
{"title":"CVD diamond: a review on options and reality","authors":"C. Nebel","doi":"10.1080/26941112.2023.2201592","DOIUrl":"https://doi.org/10.1080/26941112.2023.2201592","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123985206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Insights on self-assembly of carbon in the processes of thermal transformations under high pressures 高压下热转化过程中碳的自组装
Functional Diamond Pub Date : 2023-04-10 DOI: 10.1080/26941112.2023.2193212
V. Davydov, V. Agafonov, T. Plakhotnik, V. N. Khabashesku
{"title":"Insights on self-assembly of carbon in the processes of thermal transformations under high pressures","authors":"V. Davydov, V. Agafonov, T. Plakhotnik, V. N. Khabashesku","doi":"10.1080/26941112.2023.2193212","DOIUrl":"https://doi.org/10.1080/26941112.2023.2193212","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124091491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure 双衬底结构微波等离子体化学气相沉积在氮化镓上制备金刚石
Functional Diamond Pub Date : 2023-03-02 DOI: 10.1080/26941112.2023.2183097
Yurui Wang, Deng Gao, Tong Zhang, H. Zhang, Yu Zhang, Q. Fu, Hongyang Zhao, Zhibin Ma
{"title":"Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure","authors":"Yurui Wang, Deng Gao, Tong Zhang, H. Zhang, Yu Zhang, Q. Fu, Hongyang Zhao, Zhibin Ma","doi":"10.1080/26941112.2023.2183097","DOIUrl":"https://doi.org/10.1080/26941112.2023.2183097","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122104921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density 基于(0 0 1)单晶金刚石的端氢金刚石mosfet具有最先进的高射频功率密度
Functional Diamond Pub Date : 2022-12-31 DOI: 10.1080/26941112.2022.2082853
Cui Yu, Chuangji Zhou, Jianchao Guo, Zezhao He, Mengyu Ma, Hao Yu, Xubo Song, Aimin Bu, Z. Feng
{"title":"Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density","authors":"Cui Yu, Chuangji Zhou, Jianchao Guo, Zezhao He, Mengyu Ma, Hao Yu, Xubo Song, Aimin Bu, Z. Feng","doi":"10.1080/26941112.2022.2082853","DOIUrl":"https://doi.org/10.1080/26941112.2022.2082853","url":null,"abstract":"Abstract Diamond field-effect transistor (FET) has great application potential for high frequency and high power electronic devices. In this work, diamond FETs were fabricated on (0 0 1) single crystal diamond with homoepitaxial layer. The nitrogen impurity content in the homoepitaxial layer is greatly decreased as measured by the Raman and photoluminescence spectra. The diamond field effect transistor with 100 nm Al2O3 as gate dielectric shows ohomic contact resistance of 35 Ω . mm, maximum drain saturation current density of 500 mA/mm, and maximum transconductance of 20.1 mS/mm. Due to the high quality of Al2O3 gate dielectric and single crystal diamond substrate, the drain work voltage of −58 V is achieved for the diamond FETs. A continuous wave output power density of 4.2 W/mm at 2 GHz is obtained. The output power densities at 4 and 10 GHz are also improved and achieve 3.1 and 1.7 W/mm, respectively. This work shows the application potential of single crystal diamond for high frequency and high power electronic devices.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124179034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Heteroepitaxy of diamond semiconductor on iridium: a review 金刚石半导体在铱上的异质外延研究进展
Functional Diamond Pub Date : 2022-12-31 DOI: 10.1080/26941112.2022.2162348
Wen Wang, Benjian Liu, Leining Zhang, Jiecai Han, Kang Liu, B. Dai, Jiaqi Zhu
{"title":"Heteroepitaxy of diamond semiconductor on iridium: a review","authors":"Wen Wang, Benjian Liu, Leining Zhang, Jiecai Han, Kang Liu, B. Dai, Jiaqi Zhu","doi":"10.1080/26941112.2022.2162348","DOIUrl":"https://doi.org/10.1080/26941112.2022.2162348","url":null,"abstract":"Abstract As one of the representatives of carbon-based semiconductors, diamond is called the “Mount Everest” of electronic materials. To maximize its properties and realize its industrial applications, the fabrication of wafer-scale high-quality diamonds is critical. To date, heteroepitaxy is considered as a promising method for the growth of diamond wafers with considerable development. In this review, fundamentals of diamond heteroepitaxy is firstly introduced from several perspectives including nucleation thermodynamics and kinetic, nucleation process at the atomic level, as well as the interplay between the epitaxial film and substrate. Second, the bias enhanced nucleation (BEN) method is reviewed, including BEN setup, BEN process window, nucleation phenomenology (mainly on Iridium), nucleation mechanism by ion bombardment, and large-scale nucleation realization. Third, the following textured growth process is presented, as well as grain boundary annihilation, and dislocation and stress reduction technologies. Fourth, the applications of diamonds in electronic devices are studied, showing its excellent performances in the future power and electronic devices. Finally, prospects in this field are proposed from several aspects.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131843753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heat transfer enhancement by diamond nanofluid in gravity heat pipe for waste heat recovery 金刚石纳米流体在重力热管废热回收中的强化传热研究
Functional Diamond Pub Date : 2022-12-31 DOI: 10.1080/26941112.2022.2163594
Ning Qian, Fan Jiang, Jiajia Chen, Yucan Fu, Jing-zhi Zhang, Jiu-hua Xu
{"title":"Heat transfer enhancement by diamond nanofluid in gravity heat pipe for waste heat recovery","authors":"Ning Qian, Fan Jiang, Jiajia Chen, Yucan Fu, Jing-zhi Zhang, Jiu-hua Xu","doi":"10.1080/26941112.2022.2163594","DOIUrl":"https://doi.org/10.1080/26941112.2022.2163594","url":null,"abstract":"Abstract Waste heat recovery is significant for improving energy utilization, reducing carbon emissions, and neutrality. The gravity heat pipe (GHP) has excellent thermal performance due to the cyclic phase transformation of the working fluid. As an important thermal management device for waste heat recovery, the heat transport capacity of GHP improves, the efficiency and performance of the waste heat recovery increase, and more wasted heat can be stored more quickly. Nano-diamond has the highest thermal conductivity and can be dispersed in water to form a diamond nanofluid, enhancing the thermal performance of GHP. In contrast, the study on the heat transfer behavior of the diamond nanofluid in GHP is insufficient. Besides, the influences of filling ratio (FR), mass fraction (MF), and heat flux on thermal performance are in demand for further study. In this article, the heat transfer behavior is investigated by studying the flow patterns of diamond nanofluids. The influences of filling ratio and mass fraction on flow patterns are analyzed. An orthogonal experiment is conducted; the heat flux has the most significant effect on the thermal performance, followed by the filling ratio and mass fraction. The thermal performance is the best when the optimal parameters (FR = 20%, MF = 1 w.t.%) are selected under a heat flux of 20 × 104 W/m2. The equivalent heat transfer coefficient reaches 3485 W/(m2·°C). This article can achieve a deeper understanding of the diamond nanofluid heat transfer mechanism in GHP and enhance the thermal performance of GHP for better waste heat recovery.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126149738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection 用于深紫外氙准分子灯和质子探测的高耐受性钻石肖特基势垒光电二极管
Functional Diamond Pub Date : 2022-12-31 DOI: 10.1080/26941112.2022.2150526
M. Imura, M. Togawa, M. Miyahara, H. Okumura, J. Nishinaga, M. Liao, Y. Koide
{"title":"Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection","authors":"M. Imura, M. Togawa, M. Miyahara, H. Okumura, J. Nishinaga, M. Liao, Y. Koide","doi":"10.1080/26941112.2022.2150526","DOIUrl":"https://doi.org/10.1080/26941112.2022.2150526","url":null,"abstract":"Abstract The response property and stability of diamond Schottky barrier photodiodes (SBPDs) were investigated for the monitor applications of deep ultraviolet (DUV) light and high-energy radiation particles. The SBPDs were fabricated on the unintentionally doped insulating diamond epilayer grown on a heavily boron-doped p+-diamond (100) conductive substrate by microwave plasma chemical vapor deposition. The vertical-type SBPDs were constructed of semitransparent tungsten carbide (WC) Schottky contact on the top of the device and a WC/titanium ohmic contact on the bottom. The SBPDs were operated to detect the DUV light and protons in zero-bias photovoltaic mode. The spectral response of the SBPDs showed that the peak wavelength was at 182 nm with a sensitivity of 46 ± 1 mA/W. The response speed was shorter than 1 sec, with a negligible charge-up effect and persistent photoconductivity. The SBPDs showed a stable response upon the irradiation by 172-nm xenon excimer lamp with 70 mW/cm2 for 200 hrs and 70 MeV protons for the dose of 10 MGy, corresponding to a non-ionizing energy loss of 1.4 × 1016 MeV neq/cm2.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127283526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Orientated growth the 3D diamond/graphene hybrid arrays and the application in thermal interface materials 三维金刚石/石墨烯混合阵列的定向生长及其在热界面材料中的应用
Functional Diamond Pub Date : 2022-12-31 DOI: 10.1080/26941112.2023.2169080
Guorong Zhang, Hui Liu, Yang Xiao, Bing-Lan Wang, Jian Wang, Wen Zhang, Ying Xiong
{"title":"Orientated growth the 3D diamond/graphene hybrid arrays and the application in thermal interface materials","authors":"Guorong Zhang, Hui Liu, Yang Xiao, Bing-Lan Wang, Jian Wang, Wen Zhang, Ying Xiong","doi":"10.1080/26941112.2023.2169080","DOIUrl":"https://doi.org/10.1080/26941112.2023.2169080","url":null,"abstract":"Abstract Diamond and graphene are considered to be one of the most promising thermal interface materials (TIMs) for electronic devices benefited from their highest thermal conductivity in the natural world. However, orientated fabrication of high thermal conductivity diamond and graphene hybrid arrays with three dimensions (3 D) thermal conductive networks are still problematic. Here, we used a unique one-step microwave plasma chemical vapor deposition, n-butylamine, as the liquid source to prepare a novel high thermal conductivity 3 D vertical diamond/graphene (VDG) hybrid arrays films. The orientated 3 D thermal conduction path of the VDG is regulated by the growth temperature, and the through-plane thermal conductivity value of the VDG700 films up to 97 W m−1 K−1. In the actual TIM performance measurement, the system cooling efficiency with our VDG as TIM is higher than the state-of-the-art commercial TIM, demonstrating the superior ability to solve the inter-facial heat transfer issues in electronic systems.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"329 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120952610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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