Functional Diamond最新文献

{"title":"Fabrication of nanodiamonds/polyaniline nanocomposite for bilirubin adsorption in hemoperfusion","authors":"Futao Wang, Xiangyun Zheng, Qi Zhao, Yuchen Feng, Guanyue Gao, D. Stanković, Jinfang Zhi","doi":"10.1080/26941112.2023.2300475","DOIUrl":"https://doi.org/10.1080/26941112.2023.2300475","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":" May","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139787444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of nanodiamonds/polyaniline nanocomposite for bilirubin adsorption in hemoperfusion","authors":"Futao Wang, Xiangyun Zheng, Qi Zhao, Yuchen Feng, Guanyue Gao, D. Stanković, Jinfang Zhi","doi":"10.1080/26941112.2023.2300475","DOIUrl":"https://doi.org/10.1080/26941112.2023.2300475","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139847235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of substrate roughness on the nucleation and growth behaviour of microwave plasma enhanced CVD diamond films – a case study","authors":"A. Mallik, R. Rouzbahani, F. Lloret, Rani Mary Joy, Ken Haenen","doi":"10.1080/26941112.2023.2295346","DOIUrl":"https://doi.org/10.1080/26941112.2023.2295346","url":null,"abstract":"Abstract The influence of substrate surface roughness on the nucleation and growth of diamond films by chemical vapour deposition (CVD) is investigated. Silicon substrates were grinded with six different grit sizes of abrasive papers with a rotating wheel. Si was also etched by Ar+ ions to produce average surface roughness Ra = 11.29 nm on the mirror polished side (Ra = 1.17 nm). A comparison of the results of the effect of substrate roughness, on the growth behaviour of nanocrystalline diamond (NCD) films, by using both the resonant cavity and the linear antenna CVD systems, are presented here. Scanning electron microscopy (SEM) images and Raman spectroscopy reveal that under both the linear antenna and the resonant cavity microwave plasma CVD conditions, grown films are NCD. The diamond nanocrystals sizes vary from 80 to 180 nm, grown by both the reactors after few hours of deposition, irrespective of the substrate roughness, whereas their quality (defined by the relative percentage ratios of the Raman sp3 peak intensity to the non-sp3 peak intensity) varies from 33% to 45%, depending on the substrate surface roughness. Such nanocrystals grew into plate-like flat 1–6 μm size diamond grains after prolonged hours (64–69 h) of CVD growth. It is found specifically that the roughness created by the argon plasma treatment of the silicon substrate surfaces effectively enhances the nucleation and growth behaviour of the diamond films. GRAPHICAL ABSTRACT","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"2017 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139160058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Creation of shallow nitrogen vacancy centers in HPHT diamond surface via catalytic etching of transition metal","authors":"Sen Zhang, Jiwen Zhao, Yicun Li, Xiaobin Hao, Xiaohui Zhang, Pengfei Qiao, Ying Liang, Bo Liang, Wenchao Zhang, Wenxin Cao, Lei Yang, Bing Dai, Kang Liu, Benjian Liu, Jiaqi Zhu, Jiecai Han","doi":"10.1080/26941112.2023.2269964","DOIUrl":"https://doi.org/10.1080/26941112.2023.2269964","url":null,"abstract":"The nitrogen vacancy (NV) color centers are a solid-state quantum system with the ability to maintain long coherence times at room temperatures. NV centers have potential applications in quantum detection, which necessitates their positioning at minimal distances from surfaces. However, the existing methods for fabricating NV centers are cumbersome, expensive, and difficult to control. This study investigates the etching mechanism of transition metals on diamond under plasma conditions and develops a method for producing shallow NV centers on the surface of high pressure and high temperature diamond. Our proposed method enables the production of shallow NV centers below the surface in the longitudinal direction, while simultaneously allowing precise control over the lateral distribution. Moreover, the operating costs associated with our technique are significantly lower than those of ion implantation and electron irradiation. This research contributes to the advancement of iron-etching diamond processing technology, and the proposed method facilitates the more portable preparation of shallow color centers in specific regions, enabling the realization of locally controllable and scalable coupled quantum systems.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"156 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135341813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative of HPHT and CVD diamond: performance and defect analysis for alpha radiation detector","authors":"Lianxi Mu, Tingting Hu, Jinlong Liu, Zhifu Zhu, Runlong Gao, Linyue Liu, Liangxian Chen, Junjun Wei, Yuting Zheng, Xiaoping Ouyang, Chengming Li","doi":"10.1080/26941112.2023.2271510","DOIUrl":"https://doi.org/10.1080/26941112.2023.2271510","url":null,"abstract":"Currently, the high-purity single crystal diamond preparation is still a challenging task, which restricts the application of diamond in electronics. In this paper, the chemical vapor deposition (CVD) IIa type single crystal diamond was prepared on the IIa type high pressure high temperature (HPHT) substrate by combining the chamber design with the plasma purifying technology, and the performance of diamond detectors using both IIa type single crystal diamonds were compared based on the defect analysis. The dislocations in diamonds were directly observed by synchrotron radiation X-ray white-beam topography. The CVD diamond shows the comparatively low dislocation density resulting from the high-quality HPHT diamond substrate. No observable NV impurity could be found in photoluminescence (PL) spectrum. The trace impurity of substitutional nitrogen (Ns) was characterized by electron paramagnetic resonance (EPR). It shows the very low concentration in the CVD diamond (2.1 ppb) compared with the several tens ppb in HPHT diamond. This value is comparable with the electronic-grade diamond reported by Element Six. Furthermore, both of the HPHT and CVD single crystal diamonds were packaged as the α-particle radiation detectors with the typical sandwich structure and used Ni/Al (50 nm/500 nm) as metal electrodes. The energy resolution of HPHT and CVD diamond detectors were 2.04% and 0.86%, respectively. Based on Schottky contact and defect regulation, at 0 voltage, the CVD diamond detector achieved response of α-particle radiation and the charge collection efficiency (CCE) was 10.76%. Under positive voltage, the CCE of HPHT and CVD diamond detectors were 38.11% and 86.65%, respectively. The deep level trapping effect of Ns impurities on charge carriers resulted in low CCE of HPHT diamond detector. The spatial polarization effect caused by defects leaded to the formation of an internal electric field, which was the main reason affecting the transport of charge carriers in CVD diamond.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"125 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135342302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A wide ultraviolet spectra response photodetector based on epitaxial growth of highly-oriented ε-Ga ₂ O ₃ crystal on diamond substrate","authors":"Qilong Yuan, Wei Wang, Wenrui Zhang, Mengting Qiu, Mingyang Yang, Zhenglin Jia, Bo Wang, Cheng-Te Lin, Kazhihito Nishimura, Keke Chang, Kuan W. A. Chee, Junfeng Cui, Nan Jiang","doi":"10.1080/26941112.2023.2256360","DOIUrl":"https://doi.org/10.1080/26941112.2023.2256360","url":null,"abstract":"In recent years, diamond has shown great potential in solar-blind ultraviolet (UV) photodetection due to its ultrawide bandgap (∼ 5.5 eV) and other superior semiconductor properties. However, the response region of diamond photodetector is usually smaller than 230 nm, which cannot cover the whole solar-blind region from 200 to 280 nm. In this work, an ε-Ga2O3/diamond photodetector with wide spectra responsivity from 210 (or even lower) to 260 nm was fabricated. High-quality ε-Ga2O3 film with columnar crystal was epitaxially grown on single crystalline CVD diamond substrate by pulse laser deposition (PLD). TEM characterization revealed that the ε-Ga2O3 film grew along the <001> orientation on diamond (100) substrate. The deep ultraviolet (DUV) photodetector based on the ε-Ga2O3/diamond structure showed a high light-to-dark ratio over 5.7 × 104 and good linear response to the incident light power density from 10 to 400 mW/cm2. Moreover, compared to other photodetectors, the fabricated ε-Ga2O3/diamond photodetector achieved high responsivity and wide spectra response region from 210 to 260 nm, with high solar-blind rejection ratio of 104 (R240/R280) and 165 (R210/R280), respectively. The extension of spectra region with high responsivity of the ε-Ga2O3/diamond photodetector can be attributed to the thin thickness of ε-Ga2O3 film (around 200 nm) and parts of the DUV light were absorbed by diamond. The high responsivity and wide spectra response region indicate the fabricated ε-Ga2O3/diamond photodetector can be used for the detection of ultraviolet in the most of the DUV region.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135830740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single-crystal diamond growth by hot-filament CVD: a recent advances for doping, growth rate and defect controls","authors":"Shinya Ohmagari","doi":"10.1080/26941112.2023.2259941","DOIUrl":"https://doi.org/10.1080/26941112.2023.2259941","url":null,"abstract":"Diamond single crystals have garnered significant attention due to their wide-ranging applications, encompassing not only semiconducting films but also potential quantum sensing materials. The hot-filament activated chemical vapor deposition (HFCVD) technique has been extensively employed to produce polycrystalline diamond films, hard coatings, boron-doped diamond electrodes, and thermal management applications, primarily due to its notable advantages in scalability (>12 inches). However, the growth of single crystals presents certain challenges, such as wire contaminations originating from heated filament materials, which are particularly concerning for electronic applications. Furthermore, low-rate growth is unfavorable for industrial implementation. Nonetheless, recent discoveries have demonstrated that intentionally-doped metal impurities can enhance the crystallinity of diamonds, resulting in highly uniform Schottky barrier diodes with low leakage currents. Moreover, by elevating the filament temperature to 3000 °C, growth rates exceeding 10 µm/h have been successfully achieved. This study provides a concise overview of the recent advancements in hot-filament CVD growth, focusing on growth, doping, metal incorporation effects, and device performance.","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135244642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The polishing methods for large area CVD diamond wafer","authors":"Haochen Zhang, Zeng Yan, Zhipeng Song, Shuai Zhou, Zilong Zhang, Guo Chen, M. Liao, Guang-chao Chen","doi":"10.1080/26941112.2023.2246495","DOIUrl":"https://doi.org/10.1080/26941112.2023.2246495","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131627640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research progress on electrochemical property and surface modifications of nanodiamond powders","authors":"L. Dong, Guohao Zhu, J. Zang, Yanhui Wang","doi":"10.1080/26941112.2023.2234469","DOIUrl":"https://doi.org/10.1080/26941112.2023.2234469","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125562835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric","authors":"Ma Yuanchen, Ren Zeyang, Yang Shiqi, S. Kai, Zhang Jinfeng, Yang Xiaoli, Ning Xiuxiu, Zhang Jincheng, Hao Yue","doi":"10.1080/26941112.2023.2219687","DOIUrl":"https://doi.org/10.1080/26941112.2023.2219687","url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124756901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}