Ma Yuanchen, Ren Zeyang, Yang Shiqi, S. Kai, Zhang Jinfeng, Yang Xiaoli, Ning Xiuxiu, Zhang Jincheng, Hao Yue
{"title":"High temperature stability of H-diamond high frequency MOSFET with 300°C grown Al2O3 dielectric","authors":"Ma Yuanchen, Ren Zeyang, Yang Shiqi, S. Kai, Zhang Jinfeng, Yang Xiaoli, Ning Xiuxiu, Zhang Jincheng, Hao Yue","doi":"10.1080/26941112.2023.2219687","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":367894,"journal":{"name":"Functional Diamond","volume":"42 1","pages":"0"},"PeriodicalIF":5.6000,"publicationDate":"2023-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Functional Diamond","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1080/26941112.2023.2219687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}