Sensor Electronics and Microsystem Technologies最新文献_第6页

PHYSICS OF NANOTRANSISTORS: 2D MOS ELECTROSTATICS AND VIRTUAL SOURCE MODEL 纳米晶体管的物理学:二维MOS静电和虚拟源模型

Sensor Electronics and Microsystem Technologies Pub Date : 2019-09-30 DOI: 10.18524/1815-7459.2019.3.179347

Ю. О. Кругляк, М. В. Стріха

引用次数: 2

MODELING OF THE CYBER-PHYSICAL IMMUNOSENSOR SYSTEM IN THE RECTANGULAR LATTICE BY USING LATTICE DIFFERENTIAL EQUATIONS WITH DELAY 利用带延迟的点阵微分方程对矩形点阵中的信息物理免疫传感器系统进行建模

Sensor Electronics and Microsystem Technologies Pub Date : 2019-06-24 DOI: 10.18524/1815-7459.2019.2.171240

А.С. Сверстюк

引用次数: 0

DEVICES ON SAW WITH CONTROLLED CHARACTERISTICS 锯片上控制特性的装置

Sensor Electronics and Microsystem Technologies Pub Date : 2019-06-24 DOI: 10.18524/1815-7459.2019.2.171238

Я. І. Лепіх

引用次数: 0

PROSPECTS OF USING SURFACE AND BARRIER CdTe-DIODES IN SOLAR ENERGY 表面二极管和势垒二极管在太阳能中的应用前景

Sensor Electronics and Microsystem Technologies Pub Date : 2019-06-24 DOI: 10.18524/1815-7459.2019.2.171227

В. П. Махній, М. М. Березовський, О. В. Кінзерська, М. П. Мазур, Т. М. Мазур, В. В. Прокопів

引用次数: 1

OF IMITATION OF THE OPTICAL LOCATION DEVICE UNIFORM MOTION 模拟光学定位装置的均匀运动

Sensor Electronics and Microsystem Technologies Pub Date : 2019-06-24 DOI: 10.18524/1815-7459.2019.2.171244

В. І. Сантоній, І. О. Іванченко, Л. М. Будіянська, Я. І. Лепіх

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引用次数: 0

PHYSICS OF NANOTRANSISTORS: GATE VOLTAGE AND SURFACE POTENTIAL, MOBILE CHARGE IN BULK MOS AND IN THIN SOI 纳米晶体管的物理学:栅极电压和表面电位，大块MOS和薄土壤中的移动电荷

Sensor Electronics and Microsystem Technologies Pub Date : 2019-06-24 DOI: 10.18524/1815-7459.2019.2.171224

Ю. О. Кругляк, М. В. Стріха

{"title":"PHYSICS OF NANOTRANSISTORS: GATE VOLTAGE AND SURFACE POTENTIAL, MOBILE CHARGE IN BULK MOS AND IN THIN SOI","authors":"Ю. О. Кругляк, М. В. Стріха","doi":"10.18524/1815-7459.2019.2.171224","DOIUrl":"https://doi.org/10.18524/1815-7459.2019.2.171224","url":null,"abstract":"In the third one from the line our new tutorial reviews, directed to serve students, university teachers and researchers, the physics of processes in the semiconductor substrate MOSFET was discussed. This physics is determined by the bending of the zones, which depends on the surface potential ψ S , which in its turn is determined by the gate voltage VG . A sufficient general equation connecting VG with ψ S is obtained. Under the conditions of the depletion regime, a simpler dependence of ψ S on VG is obtained. The behavior of the mobile electron charge Q ∝ψ S and Q V ∝ G is discussed: how does the electronic charge vary with the surface potential and with the gate voltage in the conditions before and after the threshold voltage. The correct results in the prethreshold range and in the strong inversion mode are obtained without resorting to a numerical solution of the Poisson – Boltzmann equation, but at the same time the numerical solution of this equation covers both the subthreshold region and the strong inversion region, and the transition region between them. The behavior Q ∝ψ S and Q V ∝ G is also considered for a completely different structure of MOS, a structure with an exceptionally thin silicon on insulator substrate ETSOI, typical for the current trend of miniaturization of transistors. Nevertheless, we demonstrate that the main features of the structure of ETSOI are similar to those of the massive structure of MOS. Dependences Q ∝ψ S and Q V ∝ G have also been obtained for the ETSOI structure both below and above the threshold. The results obtained suggest that 1D electrostatics is acceptable for both massive MOS structures and ETSOI structures. In the next articles we will show how 2D electrostatics explains why the ETSOI structure with a double gate is preferable for very short nanotransistors.","PeriodicalId":367487,"journal":{"name":"Sensor Electronics and Microsystem Technologies","volume":"30 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114203724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

THE IMPACT OF ELECTRONIC IRRADIATION ON THE MAGNETIC SENSITIVITY OF n-Si SINGLE CRYSTALS 电子辐照对n-Si单晶磁灵敏度的影响

Sensor Electronics and Microsystem Technologies Pub Date : 2019-03-13 DOI: 10.18524/1815-7459.2019.1.159490

Сергій Валентинович Луньов, А. І. Зімич, Володимир Трохимович Маслюк, І. Г. Мегела

引用次数: 0

DETECTION OF Na ATOMIC CONCENTRATION BY LAYERED CHALCOGENIDES OF TIN: AB INITIO CALCULATION 用层状锡硫族化合物测定Na原子浓度:从头计算

Sensor Electronics and Microsystem Technologies Pub Date : 2019-03-13 DOI: 10.18524/1815-7459.2019.1.159487

Руслана Михайлівна Балабай, Ю. О. Прихожа, О. Х. Тадеуш

引用次数: 1

PHYSICS OF NANOTRANSISTORS: MOSFET THEORY IN TRADITIONAL APPROACH, ZERO LEVEL VIRTUAL SOURCE MODEL, AND DEPLETION APPROXIMATION 奈米电晶体的物理学:传统方法中的大部场效应晶体管理论，零电平虚源模型，和耗尽近似

Sensor Electronics and Microsystem Technologies Pub Date : 2019-03-13 DOI: 10.18524/1815-7459.2019.1.159485

Ю. О. Кругляк, М. В. Стріха

引用次数: 3

OPTIMIZATION OF POROUS SILICON CHARACTERISTICS FOR SOLAR BATTERIES 太阳能电池多孔硅特性优化研究

Sensor Electronics and Microsystem Technologies Pub Date : 2019-03-13 DOI: 10.18524/1815-7459.2019.1.159492

В. Ю. Єрохов, Юрій Миколайович Ховерко, Степан Ігорович Нічкало

引用次数: 0