{"title":"Enhancement of the Diffraction Efficiency on Volume Holographic Gratings by Silver Nanoparticles","authors":"Xiaodie Wang, Zhuoya Zhu, Yunping Qiu, Wanli Gao, W. Lei, Xiaobing Zhang","doi":"10.1109/CIRSYSSIM.2019.8935616","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935616","url":null,"abstract":"The diffraction efficiency of volume holographic gratings is one of the main factors of holographic imaging quality. A volume holographic grating is prepared by interference of two light beams and coupled with silver nanoparticles to improve the diffraction efficiency. The simulation was carried out with FDTD Solutions software. In TE mode, the diffraction efficiency before and after grating coupling is basically unchanged; while in TM mode, the diffraction efficiency is improved by 6% and the center wavelength is unchanged. The experimental results are also consistent with the simulation. The relative increase rate τ of the coupling grating diffraction efficiency in TM mode is 6%~16.2%. Diffraction enhancement is due to the local plasmon resonance characteristics of silver nanoparticles.","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132017732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Research on Formal Modeling and Safety Analysis Method of Head-up Display System for Civil Aircraft Based on AltaRica","authors":"Fukai Zhang, Haiyong Dong","doi":"10.1109/CIRSYSSIM.2019.8935566","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935566","url":null,"abstract":"The application of head-up display system (HUDS) in civil aviation effectively enhances pilots' situational awareness and flight safety. It has become necessary avionics equipment for new civil aircraft. In this article, formal modeling and safety analysis method based on AltaRica language is proposed for solving the problem that the data of system design and safety analysis cannot be expressed uniformly existing in traditional safety analysis methods. Aiming at HUDS, formal AltaRica models are built, and the failure condition model is added to the system model, which effectively combines the system design with safety analysis. Meanwhile, a graphical modeling tool-Simfia is used to make the AltaRica model of HUDS visually, to achieve assessing formal safety of HUDS. The results show that it can combine modeling with system design based on AltaRica language, to achieve consistent representation of system design and safety assessment, and effectively support the iteration process of safety analysis and system design.","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"63 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113971771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"[Title page]","authors":"","doi":"10.1109/cirsyssim.2019.8935557","DOIUrl":"https://doi.org/10.1109/cirsyssim.2019.8935557","url":null,"abstract":"","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125880645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoliang Li, Hongwei Zhang, B. Mei, Pengwei Li, Lei Luo, Qingkui Yu
{"title":"The Experiment and Simulation Calculation Study on SEU Hardened Effect of Flash FPGA","authors":"Xiaoliang Li, Hongwei Zhang, B. Mei, Pengwei Li, Lei Luo, Qingkui Yu","doi":"10.1109/CIRSYSSIM.2019.8935624","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935624","url":null,"abstract":"For Flash FPGA used in space, Single event upset (SEU) will happen caused by the high energy particle. The Mechanism of SEU and the measures of device hardened have been introduced. SEU hardened design is done for BRAM and register of a Flash FPGA. Single event effect test is performed to verify the measures. It shows the SEU cross section reduces 2 orders and 75% for BRAM and register, respectively. Based on the integral method between LET flux spectrum and SEU cross section, SEU rate is calculated for different orbits. It reduces 4–5 orders for hardened BRAM and 2–3 orders for hardened register.","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129173901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Cold Cathode X-ray Tube with MgO Composite Gate Structure","authors":"Wanli Gao, Zhuoya Zhu, Xiaodie Wang, Shunan Zhao, W. Lei, Xiaobing Zhang","doi":"10.1109/CIRSYSSIM.2019.8935618","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935618","url":null,"abstract":"In a triode field emission structure, the anode current is reduced due to the trapping of the field emission electrons by the metal gate mesh. We propose a composite structure with the MgO film evaporated on the surface of metal gate. The effect of the composite gate on the field emission of the CNTs cold cathode was studied. The cold cathode X-ray tube based on the composite gate was designed. Compared with the metal gate structure, the X-ray tube using the composite gate is stable, the anode current is greatly improved, and the electron transmittance is increased by more than 30%, which can reach 80%. It can be considered that the secondary electrons emitted from the MgO film, not only compensate the intercepted current, but also become part of the emission current, thereby improving the anode current.","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129753685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Modelling and Analysis of Electrical Stinger in a Silicon Metal Submerged Arc Furnace","authors":"M. Mbedzi, Zenghui Wang","doi":"10.1109/CIRSYSSIM.2019.8935617","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935617","url":null,"abstract":"In silicon metal furnaces, effective tapping requires a tool called a stinger; an energized graphite rod/pencil, fed by high current electrical power. A relatively high-localized current at the tap-hole opens it up and maintains the free flow of the silicon metal. The aim of this study is to estimate the electrical parameters of a stinger. The lack of system operation data of a stinger has contributed to the difficulty in designing the stinger as well as improving the safety of its operation. The model of the electrical stinger in this paper addresses two challenges: the limitation of the short circuit current by adding an inline inductor in the circuit and establishing the best operating current of a stinger. Operators' interviews and logging of real time data using instrumentation was part of the methodology used to get up to date data. The collected data was the basis of calculating the electrical parameters and modelling of the stinger.","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122573925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Passively Q-Switched Nd:YVO4 Laser Based on Silver-Plated Graphene Saturable Absorber","authors":"Tengfei Dai, Xiang Liu, W. Lei, Jianhua Chang","doi":"10.1109/CIRSYSSIM.2019.8935632","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935632","url":null,"abstract":"We demonstrate a passively Q-Switched solid state pulse laser based on silver-plated Graphene as a saturable absorber (SA). The pulsed laser operating at 1064.1 nm was realized at the threshold of 2.2 W. The pulse repetition rate of the laser can be widely changed from 0.102 to 1.29 MHz, the maximum output power and the narrowest pulse width are 509.2 mW and 280 ns, respectively.","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130215613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Gong, Shiyi Yang, K. Gang, Jun Chen, Kun Li, Qing Li
{"title":"Research on the Fringing-Field Effect of LCoS Devices with Opposite Pretilt Angles for Adjacent Pixels","authors":"Y. Gong, Shiyi Yang, K. Gang, Jun Chen, Kun Li, Qing Li","doi":"10.1109/CIRSYSSIM.2019.8935623","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935623","url":null,"abstract":"In order to research on influence of the fringe field effects caused by high-resolution Liquid Crystal on Silicon (LCoS) devices, a working mode of LCoS device with opposite pretilt angles for adjacent pixels is designed in this paper. Firstly, the method of calculating the phase-modulation rate of liquid crystal devices is introduced. Then, the distribution of phase modulation of high-resolution LCoS devices in this working mode are simulated by using the TechWizLCD software and software Matlab. Finally, the influence of fringe field effect on phase modulation characteristics of LCoS devices in this working mode is analyzed by comparing phase modulation characteristics with traditional anti-parallel mode (ECB mode). The results show that this working mode restrains the fringe field effects on the adjacent pixels on both sides of the target pixel, while the fringe field effects on the pixel edges of the other pixels is enhanced.","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125472371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qiang Huang, Yubo Song, Junjie Yang, Ming Fan, A. Hu
{"title":"A Booting Fingerprint of Device for Network Access Control","authors":"Qiang Huang, Yubo Song, Junjie Yang, Ming Fan, A. Hu","doi":"10.1109/CIRSYSSIM.2019.8935595","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935595","url":null,"abstract":"The rapid growth of the Internet of Things (IoT) is enhancing customers' experience with an ever-increasing mass of intelligent devices. However, the security doesn't get enough attention compared with novel concepts and features by manufactures which even not provide service of updates and patches. These issues could have been mitigated by the mechanism of the network access control. But traditional authentication mechanisms based on computational complexity of cryptographic protocols cannot be implemented on IoT devices with limited physical and computational resources. Therefore, we turn our attention to the device fingerprint which is like a biometric fingerprint that be able to provide identity authentication. The fingerprint proposed in this paper generated by network traffic features divided into the packet-feature and the IAT-feature. These features are extracted from the traffic when the device is booted, because at this time the device's network behavior is stable compared to other times. Experiments illustrate that the average identification accuracy of our device fingerprint reaches 92.4%","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125484053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrostatic Discharge Characteristics Simulation of Printed-Circuit-Board with Full-Wave Model","authors":"Lanlan Yang, Wenting Xu, Chang Yang, Xiangji Wang, Y. Tu, Wei Zhang","doi":"10.1109/CIRSYSSIM.2019.8935560","DOIUrl":"https://doi.org/10.1109/CIRSYSSIM.2019.8935560","url":null,"abstract":"A 3D full-wave model is used to investigate the electrostatic discharge characteristics of a Printed-Circuit-Board(PCB). The characteristics of electromagnetic field, the pin voltage and current waveforms of the components on a PCB are investigated. The simulation results briefly elaborate the influence of discharge point, signal line and via on electrostatic discharge.","PeriodicalId":367267,"journal":{"name":"2019 3rd International Conference on Circuits, System and Simulation (ICCSS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125638020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}