2016 IEEE 8th International Memory Workshop (IMW)最新文献_第5页

Improvement of Poly-Si Channel Vertical Charge Trapping NAND Devices Characteristics by High Pressure D2/H2 Annealing. 利用高压D2/H2退火改善多晶硅通道垂直电荷捕获NAND器件特性。

2016 IEEE 8th International Memory Workshop (IMW) Pub Date : 2016-05-15 DOI: 10.1109/IMW.2016.7495277

L. Breuil, J. Lisoni, R. Delhougne, C. L. Tan, J. van Houdt, G. Van den bosch, A. Furnémont

引用次数: 17

Functionality Demonstration of a High-Density 2.5V Self-Aligned Split-Gate NVM Cell Embedded into 40nm CMOS Logic Process for Automotive Microcontrollers 用于汽车微控制器的高密度2.5V自对准分栅NVM单元嵌入40nm CMOS逻辑工艺的功能演示

2016 IEEE 8th International Memory Workshop (IMW) Pub Date : 2016-05-15 DOI: 10.1109/IMW.2016.7495271

L. Luo, Z. Teo, Y. Kong, F. Deng, J. F. Liu, F. Zhang, X. Cai, K. Tan, K. Lim, P. Khoo, S. Jung, S. Siah, D. Shum, C. M. Wang, J. Xing, G. Liu, Y. Diao, G. M. Lin, L. Tee, S. Lemke, P. Ghazavi, X. Liu, N. Do, K. Pey, K. Shubhakar

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引用次数: 8

SuperFlash® Scaling Aspects: Program Disturb SuperFlash®缩放方面:程序干扰

2016 IEEE 8th International Memory Workshop (IMW) Pub Date : 2016-05-15 DOI: 10.1109/IMW.2016.7495290

V. Markov, JinHo Kim, A. Kotov

引用次数: 2

Effect of Read Disturb on Incomplete Blocks in MLC NAND Flash Arrays MLC NAND闪存阵列中读干扰对不完整块的影响

2016 IEEE 8th International Memory Workshop (IMW) Pub Date : 2016-05-01 DOI: 10.1109/IMW.2016.7495267

N. Papandreou, Thomas Parnell, T. Mittelholzer, H. Pozidis, T. Griffin, G. Tressler, T. Fisher, C. Camp

引用次数: 16