Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)最新文献_第8页

Enhancement Of Ionization In Ionized PVD By RF Pulsing And Magnetic Field 用射频脉冲和磁场增强电离PVD中的电离

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729929

J. Joo

引用次数: 0

Illumination Condition And Mask Bias For 0.18/spl mu/m Pattern With KrF Lithography KrF光刻0.18/spl mu/m图案的光照条件和掩模偏差

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729992

H. Tabuchi, Y. Shichijo, I. Okabe, N. Oka, M. Inoue, K. Iguchi

引用次数: 1

Plasma-Induced Deactivation Of P, B, Sb By Low-Energy (<30 eV) Ion Bombardment During Low-Temperature Silicon Epitaxy 低温硅外延过程中低能量(<30 eV)离子轰击等离子体诱导P, B, Sb失活

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729932

H. Kumami, W. Shindo, J. Kakuta, T. Ohmi

{"title":"Plasma-Induced Deactivation Of P, B, Sb By Low-Energy (<30 eV) Ion Bombardment During Low-Temperature Silicon Epitaxy","authors":"H. Kumami, W. Shindo, J. Kakuta, T. Ohmi","doi":"10.1109/IMNC.1998.729932","DOIUrl":"https://doi.org/10.1109/IMNC.1998.729932","url":null,"abstract":"We have experimentally shown for the first time that threshold energies of plasma-induced deactivation for phosphorus, boron and antimony in silicon epitaxy by using a low-energy ion bomibardment process [l-41. The deactivation energy of phosphorus, boron and antimony at a growing silicon film surface is -13 eV, -5 eV and -10 eV respectively as shown in Table 1. Since the deactivation energy of boron is extremely small (< 5 eV), ion bombardment energy must be precisely controlled to be lower than 5 eV in order to make the activation ratio of dopants 100 %. The experimental results of plasma-induced deactivation energy of dopants will be crucial value for plasma processing, especially for low temperature processing using ion bombardment processes. Figure 1 schematically shows an rfdc coupled mode bas sputtering system [l] used in silicon epitaxy. The kinetic energies of ions incident on the target and the substrate were independentlly determined by two external dc voltages applied to the sputtering target and the substrate, respecitiiely. Prior to the film deposition, in situ surface cleaning [1,3] under the optimized condition was carried out to remove physically adsorbed molecules onto the wafer surface during the air exposure in a clean room. The deposition rate was controlled to be 10 ndmin in this work. The sputtering target material was phosphorus (2-3x10‘’ cmS), boron ( 6 ~ 1 0 ’ ~ cmS) antimony ( 3 ~ 1 0 ’ ~ cmS) doped silicon. The crystallinity of grown silicon films was evaluated by reflective high energy electron diffraction (RHEED) analysis. The resistivrty of the in situ doped epitaxial silicon film was measured by a four-point probe method. Figure 2 shows the resistivity of a silicon film deposited using the antimony doped silicoin target as a function of the ion bombardment energy. The substrate temperature was kept at 3150’C during the deposition. Normalized ion flux which is defined as the number of bombarding argon ions per each deposited Si atom is the same in all points. In region (I), ion bombardment energy is not enough to enhance silicon film growth. Crystal structure of the grown film is polycrystal or aimorphous. Increase of resistivlty is caused by this degraded crystallinity. This situation is schemalically illustrated in Fig. 3(1). In region (II), antimony impunty was fully activated and perfect single cirystal was achieved. Kikuchi lines were observed in the RHEED photograph. It indicates that the crystallinlty of the as-deposited silicon epitaxial layer is high quality single crystal. This is also illustrated in Fig. 3(11). In region (Ill), antimony impurity was not fully activated in the as-deposited silicon epitaxial layer. However, the RHEED photograph showed Kikuchi lines. This clearly shows that antimony is unstable at growing silicon surface and easily displaced from lattice site by ion bombardment higher than -10 eV. This situation is illustrated in Fig. 3(111). In this article, deactivation energy of dopant at","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134642095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fabrication Of Ordered Nonohole Arrays Using Anodizing Of AL 铝阳极氧化法制备有序非孔阵列

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729980

H. Masuda

引用次数: 0

A CMOS Compatible Capacitive Silicon Accelerometer With Polysilicon Rib-Style Flexures 具有多晶硅肋式弯曲的CMOS兼容电容式硅加速度计

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730031

Seokyu Kim, Y. Yee, H. Kim, K. Chun

引用次数: 2

Direct Transport Measurements Through An Ensemble Of Inas Self-Assembled Quantum Dots 通过Inas自组装量子点系综的直接输运测量

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1143/JJAP.37.7169

S.K. Jung, B. Choi, S.I. Kim, C.K. Hyun, B. Min, S. Hwang, J. Park, Y. Kim, E. Kim, S. Min

引用次数: 4

A Hermetically-Sealed LC Resonator For Remote Pressure Monitoring 一种用于远程压力监测的密封LC谐振器

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.729985

Eun-Chul Park, Jun‐Bo Yoon, E. Yoon

引用次数: 1

Electron-Beam Doping In Damageless Regions Of Semiconductors By The Kick-Out Mechanism (Intersticialcy Mechanism) 利用踢出机制(间隙机制)在半导体无损区掺杂电子束

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730095

T. Wada, H. Fujimoto, Y. Tomita

引用次数: 0

Fabrication Of A Mosfet With Self-aligned Nanogate Electrode Based On Dual-functional MoO3WO3 Bilayer Resist 基于双功能MoO3WO3双层电阻的自对准纳米栅极Mosfet的制备

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730024

M. Hashimoto, T. Koreeda, N. Koshida, M. Komuro, N. Atoda

引用次数: 0

Fabrication Of Bulk Diamond Field Emitter Tip Using Beam Assisted Etching 束辅助蚀刻法制备大块金刚石场发射极

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI: 10.1109/IMNC.1998.730042

J. Taniguchi, M. Komuro, H. Hiroshima, I. Miyamoto

引用次数: 0