KrF光刻0.18/spl mu/m图案的光照条件和掩模偏差

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI:10.1109/IMNC.1998.729992

H. Tabuchi, Y. Shichijo, I. Okabe, N. Oka, M. Inoue, K. Iguchi

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引用次数: 1

摘要

1. KrF准分子激光光刻将用于制造0.1 pm设计规则器件，因为ArF光刻基础设施将无法在1999年及时完成，届时SIA路线图提到第一批0.18pm产品将发货。因此，有必要将分辨率增强技术(RET)结合使用。本文报道了利用半色调掩模(HTM)和离轴照明(OAl)对光照条件和掩模偏置进行优化，从而实现0.18pm隔离和密集抗蚀图案的线宽控制和工艺起始。

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Illumination Condition And Mask Bias For 0.18/spl mu/m Pattern With KrF Lithography

1. htroduction KrF excimer laser lithography will be used to manufacture 0.1 8pm design-rule devices, because ArF lithography infrastructure will not be in time for 1999, when SIA roadmap mentions that first 0.18pm products are shipped. Therefore it is necessary to use resolution enhancement technology(RET) together. In this paper the optimization of illumination condition and mask bias with half-tone mask(HTM) d off-axis illumination(OAl), as a result in the line width control and the process rgin of both isolated and dense 0.18pm resist pattern, is reported .

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Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

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