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2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)最新文献

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Affordable sub-THz band-pass mesh filters 经济实惠的次太赫兹带通网格滤波器
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7492134
P. Kopyt, B. Salski, P. Zagrajek, J. Marczewski
{"title":"Affordable sub-THz band-pass mesh filters","authors":"P. Kopyt, B. Salski, P. Zagrajek, J. Marczewski","doi":"10.1109/MIKON.2016.7492134","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7492134","url":null,"abstract":"This paper describes a design and realization of an affordable band-pass mesh filter as an element of a cheap sub-THz band spectrometer. The complete spectrometer system is to be built of a number of detectors of the THz radiation based on metal-oxide-semiconductor field-effect transistors monolithically integrated with planar narrow-band antennas fabricated on a thin substrate. The role of the filters is to precisely control the operating frequency of each pixel. Because of high number of the detectors fabricated as a tightly-spaced detecting line (or an array) many filters tuned to different frequencies are needed. The proposed solution allows to easily manufacture many such filters in a single piece of metal foil forming a filter bank without increasing the price of the element.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129856086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends 一种适用于未来x波段星载雷达收发模块前端集成的GaN MMIC芯片组
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7492014
Sara D’Angelo, A. Biondi, F. Scappaviva, D. Resca, V. A. Monaco
{"title":"A GaN MMIC chipset suitable for integration in future X-band spaceborne radar T/R module Frontends","authors":"Sara D’Angelo, A. Biondi, F. Scappaviva, D. Resca, V. A. Monaco","doi":"10.1109/MIKON.2016.7492014","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7492014","url":null,"abstract":"A set of monolithic microwave integrated circuits (MMICs) has been successfully developed by using a qualified European GaN HEMT technology. In particular a high power amplifier (HPA), a low noise amplifier (LNA) and a single pole double throw (SPDT) switch have been designed, manufactured and tested. The presented chipset is very suitable for integration in future GaN-based T/R module Frontend for spaceborne X-band SAR applications. In particular, the MMIC HPA integrates two stages of gain in 5.5 × 4.0 mm2 of area. Its measured performance is an output power of 27 W, a PAE of 36% with a linear gain greater than 24 dB from 8.8 GHz to 10.2 GHz. The MMIC LNA integrates three stages of gain in 3.0 × 2.02 mm2 of area. Its measured performance is a small signal gain greater than 23 dB with an associated noise figure of 1.6 dB in the frequency range from 7.4 to 11.4 GHz. Besides, its output power at 1 dB of gain compression is greater than 22 dBm. The MMIC SPDT switch exploits a robust asymmetrical absorptive/reflective topology in 3.0 × 1.0 mm2 of area. The chosen topology allows obtaining different functionalities of each switched branch. In the frequency range from 8.4 GHz to 10.8 GHz its measured performance is an insertion loss lower than 1 dB for both tx and rx path, and tx-mode rx-mode isolations better than 20 dB and 28 dB respectively. Besides, the tx path 1 dB insertion loss compression occurs at nearly 20 W of input power.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130682393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Modal analysis of planar elliptical resonator deposited on unshielded dielectric slab 非屏蔽介质板上平面椭圆谐振腔模态分析
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7492128
M. Pergol, W. Zieniutycz
{"title":"Modal analysis of planar elliptical resonator deposited on unshielded dielectric slab","authors":"M. Pergol, W. Zieniutycz","doi":"10.1109/MIKON.2016.7492128","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7492128","url":null,"abstract":"Modal analysis of isolated open planar elliptical patch placed on dielectric slab is presented in the paper. It applies concept of Illuminating Modes which is formulated for the case of two-side opened structure. The current on patch is expanded in basis functions in form of Mathieu radial and angular functions. The spectrum of excited modes for exemplary planar resonators is presented and discussed using the concept of power of single current mode and power of total current resulting from plane wave illumination of the structure. The corresponding radiation patterns are also presented and discussed.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114553967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Shielded coupled strip and slot guides with a thin omega pseudochiral medium layer 屏蔽耦合带和槽导轨与薄欧米茄假手性介质层
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7492117
W. Marynowski, A. Kusiek, R. Lech, J. Mazur
{"title":"Shielded coupled strip and slot guides with a thin omega pseudochiral medium layer","authors":"W. Marynowski, A. Kusiek, R. Lech, J. Mazur","doi":"10.1109/MIKON.2016.7492117","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7492117","url":null,"abstract":"A method of moments combined with mode matching technique is applied to analyze the shielded coupled strip and slot line structures containing a thin plate of Ω pseudochiral medium. The boundary problems are simplified by introducing for Ω-medium the approximate continuity conditions. Such mathematical model allows to examine the field displacement effect appearing in the considered guide resulting from the coupling between the Ω-medium and modal fields. This effect has different influence on the wave parameters of the modes propagating in the coupled strip and slot guides. The phenomena occurring in the investigated structures can be applied to the design of the novel devices such as couplers or filters.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116271650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance limits of the tunable waveguide phase shifter 可调谐波导移相器的性能限制
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7491971
V. Kazmirenko, I. Golubeva, Y. Prokopenko
{"title":"Performance limits of the tunable waveguide phase shifter","authors":"V. Kazmirenko, I. Golubeva, Y. Prokopenko","doi":"10.1109/MIKON.2016.7491971","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7491971","url":null,"abstract":"The paper presents study of the tunable phase shifter performance limits. The study derives dependence of specific phase shift and insertion loss on combination of material properties and device dimensions. Condition of maximum possible phase shift and minimum possible insertion loss is defined.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125440332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliability of Gallium Nitride microwave transistors 氮化镓微波晶体管的可靠性
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7492013
E. Zanoni, G. Meneghesso, M. Meneghini, A. Stocco, S. Dalcanale, F. Rampazzo, C. de Santi, I. Rossetto
{"title":"Reliability of Gallium Nitride microwave transistors","authors":"E. Zanoni, G. Meneghesso, M. Meneghini, A. Stocco, S. Dalcanale, F. Rampazzo, C. de Santi, I. Rossetto","doi":"10.1109/MIKON.2016.7492013","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7492013","url":null,"abstract":"This paper describes a laboratory and methodology for the complete assessment of the reliability of microwave and power Gallium Nitride (GaN) devices. Examples related to deep level effects in GaN High Electron Mobility Transistors (HEMTs), to HEMT gate degradation and time dependent breakdown effects are described.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134314238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Extending the antenna polygon for L-band l波段天线多边形的扩展
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7492021
V. Závodný
{"title":"Extending the antenna polygon for L-band","authors":"V. Závodný","doi":"10.1109/MIKON.2016.7492021","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7492021","url":null,"abstract":"The paper describe antenna polygon reconstruction, that is focused to new equipment for L-band measurement system. New measuring instrument was used for remote access. Reflector antenna with two electronically selected orthogonal antenna planes was realized, measured and installed at tower.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127614300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of dual-polarized MIMO linear antenna arrays with increased port-to-port isolation 增加端口对端口隔离的双极化MIMO线性天线阵列的设计
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7492090
D. Wójcik, M. Surma, A. Noga, M. Magnuski
{"title":"Design of dual-polarized MIMO linear antenna arrays with increased port-to-port isolation","authors":"D. Wójcik, M. Surma, A. Noga, M. Magnuski","doi":"10.1109/MIKON.2016.7492090","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7492090","url":null,"abstract":"In the paper selected issues of feeding networks for dual-polarized linear antenna arrays designed for 2×2 MIMO applications are described. The influence of topology of corporate feeding network on achieved port-to-port isolation is shown as the result of computer simulations. As an example, four element linear arrays of two-layer electromagnetically coupled microstrip antennas designed for U-NII 5.15-5.85 GHz frequency band are examined in CST Microwave Studio.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128956670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Resonant frequencies in the open microstrip structures placed on curved surfaces 放置在曲面上的开放微带结构的谐振频率
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7491974
R. Lech, A. Kusiek
{"title":"Resonant frequencies in the open microstrip structures placed on curved surfaces","authors":"R. Lech, A. Kusiek","doi":"10.1109/MIKON.2016.7491974","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7491974","url":null,"abstract":"The paper presents the research on open microstrip structures placed on curved surfaces such as cylindrical, elliptical or spherical. The numerical analysis of investigated structures is based on expansion of electric and magnetic fields into suitable function series. Utilizing the continuity conditions the boundary problem is formulated which is solved with the use of method of moments. The investigated structures find application in antenna technique for the construction of conformal antennas.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130851438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A DC analytical AlGaN/GaN HEMT model for transistor characterisation 用于晶体管表征的直流分析AlGaN/GaN HEMT模型
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI: 10.1109/MIKON.2016.7492083
Dawid Kuchta, W. Wojtasiak
{"title":"A DC analytical AlGaN/GaN HEMT model for transistor characterisation","authors":"Dawid Kuchta, W. Wojtasiak","doi":"10.1109/MIKON.2016.7492083","DOIUrl":"https://doi.org/10.1109/MIKON.2016.7492083","url":null,"abstract":"In this paper an analytical model is developed to characterize the performance of GaN-based microwave HEMTs. To theoretically predict mobility and sheet carrier concentration in 2-dimentional electron gas (2DEG) of GaN HEMTs extraction procedure is proposed. Presented model is based on physical relationships and I–V characteristics without introducing any semiempirical parameter. Results are compared to experimental data achieved from C-V and Hall measurements. Proposed model is found to be useful for device designers to rapid assess the process quality without the use of additional measurements that require previously applied probes.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132693094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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