A DC analytical AlGaN/GaN HEMT model for transistor characterisation

Abstract

In this paper an analytical model is developed to characterize the performance of GaN-based microwave HEMTs. To theoretically predict mobility and sheet carrier concentration in 2-dimentional electron gas (2DEG) of GaN HEMTs extraction procedure is proposed. Presented model is based on physical relationships and I–V characteristics without introducing any semiempirical parameter. Results are compared to experimental data achieved from C-V and Hall measurements. Proposed model is found to be useful for device designers to rapid assess the process quality without the use of additional measurements that require previously applied probes.