氮化镓微波晶体管的可靠性

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI:10.1109/MIKON.2016.7492013

E. Zanoni, G. Meneghesso, M. Meneghini, A. Stocco, S. Dalcanale, F. Rampazzo, C. de Santi, I. Rossetto

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引用次数: 10

摘要

本文介绍了一个完整评估微波和功率氮化镓(GaN)器件可靠性的实验室和方法。本文描述了氮化镓高电子迁移率晶体管(HEMT)中的深能级效应、HEMT栅极退化和时间相关击穿效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability of Gallium Nitride microwave transistors

This paper describes a laboratory and methodology for the complete assessment of the reliability of microwave and power Gallium Nitride (GaN) devices. Examples related to deep level effects in GaN High Electron Mobility Transistors (HEMTs), to HEMT gate degradation and time dependent breakdown effects are described.

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来源期刊

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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