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Halbleiter und Phosphore最新文献

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The Incorporation of Foreign Atoms in Crystalline solids 外来原子在结晶固体中的掺入
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_2
F. A. Kröger, H. Vink
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引用次数: 1
Die relaxationsmäßige Dielektrikapolarisation und das innere Feld in Kristallen und Polykristallen 中间继电器两极分化
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_97
G. I. Skanawi
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引用次数: 0
Photo-Electro-Magnetic and Magnetic Barrier Layer Effects 光电和磁势垒层效应
Halbleiter und Phosphore Pub Date : 1958-12-31 DOI: 10.1007/978-3-663-02557-3_7
T. Moss
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引用次数: 0
Resonance Potentials in Thin Films of Potassium Chloride 氯化钾薄膜的共振电位
Halbleiter und Phosphore Pub Date : 1957-06-01 DOI: 10.1007/978-3-663-02557-3_37
H. Jacobs, I. N. Greenberg, L. Goble, A. Ramsa
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引用次数: 0
Junctions Induced in Germanium Surfaces by Transverse Electric Fields 横向电场在锗表面诱导的结
Halbleiter und Phosphore Pub Date : 1957-05-01 DOI: 10.1088/0370-1301/70/5/304
J. Nixon, P. Banbury
{"title":"Junctions Induced in Germanium Surfaces by Transverse Electric Fields","authors":"J. Nixon, P. Banbury","doi":"10.1088/0370-1301/70/5/304","DOIUrl":"https://doi.org/10.1088/0370-1301/70/5/304","url":null,"abstract":"The surface conductance of germanium may be modulated by an external electric field. If the electrode used for applying the field does not cover the full extension of the specimen a boundary effect appears. In the presence of longitudinal currents the transition regions between the field-free and field-applied surfaces behave as junctions, giving rise to carrier concentration disturbances and also to rectification. The properties of a single field-induced junction have been investigated experimentally.","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1957-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121803614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mesures en Fonction de la Température du Courant dans les Jonctions de Germanium n-p 测量作为n-p锗结电流温度的函数
Halbleiter und Phosphore Pub Date : 1957-05-01 DOI: 10.1007/978-3-663-02557-3_22
M. Bernard
{"title":"Mesures en Fonction de la Température du Courant dans les Jonctions de Germanium n-p","authors":"M. Bernard","doi":"10.1007/978-3-663-02557-3_22","DOIUrl":"https://doi.org/10.1007/978-3-663-02557-3_22","url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1957-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126689049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Drift of Minority Carriers in the Presence of Trapping 陷阱存在下的少数载流子漂移
Halbleiter und Phosphore Pub Date : 1957-02-01 DOI: 10.1088/0370-1301/70/2/309
A. Jonscher
{"title":"Drift of Minority Carriers in the Presence of Trapping","authors":"A. Jonscher","doi":"10.1088/0370-1301/70/2/309","DOIUrl":"https://doi.org/10.1088/0370-1301/70/2/309","url":null,"abstract":"It is known that in most semiconductors and photoconductors excitation of excess free carrier densities Δn and Δp is accompanied by some “trapping” of either or both carriers in localised levels in the forbidden band. The population of these levels changes by Δn t and we have the general relation: \u0000 \u0000 \u0000 \u0000(1)","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1957-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121144703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Theory of Dynamic Quenching of Photoconductivity and Luminescence 光电导率和发光的动态猝灭理论
Halbleiter und Phosphore Pub Date : 1956-12-01 DOI: 10.1149/1.2430187
F. Matossi
{"title":"Theory of Dynamic Quenching of Photoconductivity and Luminescence","authors":"F. Matossi","doi":"10.1149/1.2430187","DOIUrl":"https://doi.org/10.1149/1.2430187","url":null,"abstract":"The modification of photoconductivity or luminescence in CdS and ZnS semiconductors by infrared radiation or by electric fields has recently been investigated in some detail [1, 2, 3, 4, 5, 6,] The aspect of this phenomenon with which this paper is concerned is the “dynamic quenching” [3], that is the change of photoconductivity or luminescence with time while the quenching agent (infrared radiation or electric field) is applied or after its removal. Usually, the “quenching” is a superposition of stimulation effects and quenching proper.","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1956-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133280729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Hydrogen as a Donor in Zinc Oxide 氧化锌中氢作为供体
Halbleiter und Phosphore Pub Date : 1956-12-01 DOI: 10.1063/1.1743165
D. G. Thomas, J. J. Lander
{"title":"Hydrogen as a Donor in Zinc Oxide","authors":"D. G. Thomas, J. J. Lander","doi":"10.1063/1.1743165","DOIUrl":"https://doi.org/10.1063/1.1743165","url":null,"abstract":"Hydrogen is found to diffuse into and increase the conductivity of single ZnO crystals. The diffusion rates have been obtained, as well as the temperature and pressure dependencies of the quantity of hydrogen in the crystal. This quantity is found to be influenced by the electrons already in the crystal. It is thought likely that hydroxyl groups are formed from the hydrogen and oxide ions. The donor center has an ionization energy of 0.04 ev.","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1956-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128995447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 268
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