{"title":"光电导率和发光的动态猝灭理论","authors":"F. Matossi","doi":"10.1149/1.2430187","DOIUrl":null,"url":null,"abstract":"The modification of photoconductivity or luminescence in CdS and ZnS semiconductors by infrared radiation or by electric fields has recently been investigated in some detail [1, 2, 3, 4, 5, 6,] The aspect of this phenomenon with which this paper is concerned is the “dynamic quenching” [3], that is the change of photoconductivity or luminescence with time while the quenching agent (infrared radiation or electric field) is applied or after its removal. Usually, the “quenching” is a superposition of stimulation effects and quenching proper.","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1956-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Theory of Dynamic Quenching of Photoconductivity and Luminescence\",\"authors\":\"F. Matossi\",\"doi\":\"10.1149/1.2430187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The modification of photoconductivity or luminescence in CdS and ZnS semiconductors by infrared radiation or by electric fields has recently been investigated in some detail [1, 2, 3, 4, 5, 6,] The aspect of this phenomenon with which this paper is concerned is the “dynamic quenching” [3], that is the change of photoconductivity or luminescence with time while the quenching agent (infrared radiation or electric field) is applied or after its removal. Usually, the “quenching” is a superposition of stimulation effects and quenching proper.\",\"PeriodicalId\":351690,\"journal\":{\"name\":\"Halbleiter und Phosphore\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1956-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Halbleiter und Phosphore\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/1.2430187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Halbleiter und Phosphore","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/1.2430187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Theory of Dynamic Quenching of Photoconductivity and Luminescence
The modification of photoconductivity or luminescence in CdS and ZnS semiconductors by infrared radiation or by electric fields has recently been investigated in some detail [1, 2, 3, 4, 5, 6,] The aspect of this phenomenon with which this paper is concerned is the “dynamic quenching” [3], that is the change of photoconductivity or luminescence with time while the quenching agent (infrared radiation or electric field) is applied or after its removal. Usually, the “quenching” is a superposition of stimulation effects and quenching proper.
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