陷阱存在下的少数载流子漂移

Halbleiter und Phosphore Pub Date : 1957-02-01 DOI:10.1088/0370-1301/70/2/309

A. Jonscher

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引用次数: 4

摘要

众所周知，在大多数半导体和光导体中，过量自由载流子密度Δn和Δp的激发伴随着在禁止带中的局域水平的载流子的某些“捕获”。这些水平的总体变化Δn t，我们有一般关系:(1)

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Drift of Minority Carriers in the Presence of Trapping

It is known that in most semiconductors and photoconductors excitation of excess free carrier densities Δn and Δp is accompanied by some “trapping” of either or both carriers in localised levels in the forbidden band. The population of these levels changes by Δn t and we have the general relation: (1)

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Halbleiter und Phosphore

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