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2015 IEEE Summer Topicals Meeting Series (SUM)最新文献

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Monolithic receivers in deep submicron SOI and bulk CMOS 深亚微米SOI和大块CMOS的单片接收器
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248174
Rajeev J Ram
{"title":"Monolithic receivers in deep submicron SOI and bulk CMOS","authors":"Rajeev J Ram","doi":"10.1109/PHOSST.2015.7248174","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248174","url":null,"abstract":"A review of recent monolithic waveguide receivers - comprised of infrared waveguide detectors, analog and digital circuits - in both foundry silicon-on-insulator processes as well as custom bulk CMOS processes is presented.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"260 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115885423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advancing the capacity of phosphorescent white LED based visible light communication network 提高基于磷光白光LED可见光通信网络的容量
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248179
N. Chi, Yiguang Wang, Xingxing Huang
{"title":"Advancing the capacity of phosphorescent white LED based visible light communication network","authors":"N. Chi, Yiguang Wang, Xingxing Huang","doi":"10.1109/PHOSST.2015.7248179","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248179","url":null,"abstract":"We propose to utilize pre-equalization circuit and receiver diversity technology to advancing the capacity of phosphorescent white LED based VLC system. An indoor and an outdoor VLC system have been experimentally demonstrated.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134116243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Fiber optical parametric amplifier using quasi-phase-matching technique 采用准相位匹配技术的光纤参量放大器
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248202
S. Takasaka
{"title":"Fiber optical parametric amplifier using quasi-phase-matching technique","authors":"S. Takasaka","doi":"10.1109/PHOSST.2015.7248202","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248202","url":null,"abstract":"A fiber optical parametric amplifier using both quasi-phase-matching technique and dispersion stable highly nonlinear fibers has uniform gain more than 20 dB with 1-dB gain bandwidth of 38 nm which covers C-band.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133895521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
2D material characterization for printed electronics applications 印刷电子应用的二维材料表征
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248216
Mónica Michel, D. Fadil, E. Gustavo, Gustavo E. Lara, A. Delgado, Esteban Escaraga, A. Kaul
{"title":"2D material characterization for printed electronics applications","authors":"Mónica Michel, D. Fadil, E. Gustavo, Gustavo E. Lara, A. Delgado, Esteban Escaraga, A. Kaul","doi":"10.1109/PHOSST.2015.7248216","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248216","url":null,"abstract":"Thin film production with solution-based materials can complement or replace semiconductors in high performance and low cost thin film devices. The possibility of inkjet printing to eventually create devices, is explored in this work.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131540625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Si-based GeSn edge-emitting LEDs with Sn compositions up to 8% 锡含量高达8%的硅基GeSn边缘发光led
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248263
W. Du, S. Ghetmiri, Yiyin Zhou, A. Mosleh, H. Naseem, Shui-Qing Yu, J. Tolle, J. Margetis, R. Soref, G. Sun, Boahua Li
{"title":"Si-based GeSn edge-emitting LEDs with Sn compositions up to 8%","authors":"W. Du, S. Ghetmiri, Yiyin Zhou, A. Mosleh, H. Naseem, Shui-Qing Yu, J. Tolle, J. Margetis, R. Soref, G. Sun, Boahua Li","doi":"10.1109/PHOSST.2015.7248263","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248263","url":null,"abstract":"Characterization of GeSn edge-emitting LEDs has been conducted with Sn compositions up to 8%. Room temperature electroluminescence spectra and emission power were measured. A peak power of 50 mW was achieved with an 8%-Sn device.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"27 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133136647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MHz operation of 250 nm ultra-violet micro-light emitting diodes 250纳米紫外微发光二极管的MHz操作
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248255
P. Parbrook, P. Pampili, M. Akhter, C. Eason, V. Zubialevich, P. Maaskant, Z. Quan, P. O'Brien, B. Corbett
{"title":"MHz operation of 250 nm ultra-violet micro-light emitting diodes","authors":"P. Parbrook, P. Pampili, M. Akhter, C. Eason, V. Zubialevich, P. Maaskant, Z. Quan, P. O'Brien, B. Corbett","doi":"10.1109/PHOSST.2015.7248255","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248255","url":null,"abstract":"Deep Ultra Violet Light Emitting diodes have undergone increasing research interest due to their application for sterilisation of water and air for example [1]. They also can potentially provide compact efficient sources for fluorescence excitation [2] and food preservation [3]. A key advantage of such LEDs over the alternative Hg lamp sources is their ease of control and switching, in addition to the benefits to the environment, where Hg disposal is a critical issue.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128886502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fiber laser pumped OPO for high power mid-IR laser output 用于高功率中红外激光输出的光纤激光泵浦OPO
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248198
Yonghang Shen, Bo Wu, P. Jiang, Tao Chen, Chengzhi Hu
{"title":"Fiber laser pumped OPO for high power mid-IR laser output","authors":"Yonghang Shen, Bo Wu, P. Jiang, Tao Chen, Chengzhi Hu","doi":"10.1109/PHOSST.2015.7248198","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248198","url":null,"abstract":"Mid-infrared (MIR) lasers around 3 to 5 μm have been widely used in many application fields, such as environmental monitoring, medical diagnostics, and infrared counter-measurement in recent years. The mid-IR laser output from the OPO can realize high average power and even the fast laser wavelength tunability to some extent. Fiber laser pumped PPMgLN-based OPO features compactness, high efficiency and long term stability, and is thus one kind of the mid-IR laser systems with great prospect.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124186655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Group IV mid-IR photonics 第四组中红外光子学
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248190
G. Reed, M. Nedeljkovic, J. Soler Penadés, C. Mitchell, A. Khokhar, C. Littlejohns, S. Stankovic, B. Troia, V. Passaro, L. Shen, N. Healy, A. Peacock, A. Ortega-Moñux, G. Wanguemert-Perez, Í. Molina-Fernández, P. Cheben, J. Ackert, A. Knights, D. Thomson, F. Gardes, G. Mashanovich
{"title":"Group IV mid-IR photonics","authors":"G. Reed, M. Nedeljkovic, J. Soler Penadés, C. Mitchell, A. Khokhar, C. Littlejohns, S. Stankovic, B. Troia, V. Passaro, L. Shen, N. Healy, A. Peacock, A. Ortega-Moñux, G. Wanguemert-Perez, Í. Molina-Fernández, P. Cheben, J. Ackert, A. Knights, D. Thomson, F. Gardes, G. Mashanovich","doi":"10.1109/PHOSST.2015.7248190","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248190","url":null,"abstract":"Silicon and germanium are transparent up to approximately 8 μm and 15 μm, respectively, thus offering a range of applications in biochemical and environmental sensing, medicine, astronomy and communications [1]. Silicon-on-insulator (SOI), can be used only up to 4 μm due to the high absorption loss of silicon dioxide, and therefore alternative material platforms have to be utilized for longer wavelengths. Also, to fully exploit the transparency range of SOI, 400 or 500 nm thick overlayers need to be used rather than the most popular 220 nm platform [2]. In this paper we report record low loss MIR SOI strip and slot waveguides, as well as Vernier racetrack configurations. If the buried oxide can be removed and replaced with air, such a platform would be transparent up to 8 μm. We report a robust design based on single etch suspended Si waveguides. Ge-on-Si waveguides have already been demonstrated with losses of 2.5-3.0 dB/cm at λ=5.8 μm by Chang et. al [3] and Shen et. al [4]. We report a record low loss in Ge-on-Si and a demonstration of all optical modulation in such waveguides. Although Si is transparent beyond 1.1 μm, it has been demonstrated that it can be used as a photodetector if mid-bandgap states are created by ion implantation. In this paper we show that detection in Si can be extended to up to 2.5 μm by implantation of SOI waveguides with boron. Finally, we also report theoretical analysis of electroabsorption and electrorefraction in Ge.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115118404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implementing ideal nonlinear compensation through nonlinearity 通过非线性实现理想的非线性补偿
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248270
K. Solis-Trapala, Takashi Inoue, M. Pelusi, H. N. Tan, S. Namiki
{"title":"Implementing ideal nonlinear compensation through nonlinearity","authors":"K. Solis-Trapala, Takashi Inoue, M. Pelusi, H. N. Tan, S. Namiki","doi":"10.1109/PHOSST.2015.7248270","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248270","url":null,"abstract":"We review the recent progress of a system designed to compensate exactly the nonlinearity in WDM transmission. Its superior performance, experimentally demonstrated, is empowered by two nonlinear processes: optical phase conjugation and Raman amplification.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116982943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Properties of 2D layered crystals: MoS2, NbSe2 and black phosphorus 二维层状晶体:MoS2、NbSe2和黑磷的性质
2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI: 10.1109/PHOSST.2015.7248163
D. Fadil, Gustavo E. Lara, Mónica Michel, A. Delgado, Christopher Gaytan, A. Kaul
{"title":"Properties of 2D layered crystals: MoS2, NbSe2 and black phosphorus","authors":"D. Fadil, Gustavo E. Lara, Mónica Michel, A. Delgado, Christopher Gaytan, A. Kaul","doi":"10.1109/PHOSST.2015.7248163","DOIUrl":"https://doi.org/10.1109/PHOSST.2015.7248163","url":null,"abstract":"The two dimensional layered crystals represent promising candidate materials for enabling novel photonics and nanoelectronics devices. In this paper, we present our early work on deposition and characterization of functional 2D materials.","PeriodicalId":349795,"journal":{"name":"2015 IEEE Summer Topicals Meeting Series (SUM)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121917949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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