Si-based GeSn edge-emitting LEDs with Sn compositions up to 8%

2015 IEEE Summer Topicals Meeting Series (SUM) Pub Date : 2015-07-13 DOI:10.1109/PHOSST.2015.7248263

W. Du, S. Ghetmiri, Yiyin Zhou, A. Mosleh, H. Naseem, Shui-Qing Yu, J. Tolle, J. Margetis, R. Soref, G. Sun, Boahua Li

引用次数: 1

Abstract

Characterization of GeSn edge-emitting LEDs has been conducted with Sn compositions up to 8%. Room temperature electroluminescence spectra and emission power were measured. A peak power of 50 mW was achieved with an 8%-Sn device.

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锡含量高达8%的硅基GeSn边缘发光led

在锡含量高达8%的情况下，对GeSn边缘发光led进行了表征。测量了室温电致发光光谱和发射功率。采用8%锡含量的器件，峰值功率达到50mw。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE Summer Topicals Meeting Series (SUM)

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