2018 IEEE Electron Devices Kolkata Conference (EDKCON)最新文献_第4页

Study of Gate Misalignment Effects in Single-Material Double-Gate (SMDG) MOSFET Considering Source and Drain Lateral Gaussian Doping Profile 考虑源极和漏极横向高斯掺杂分布的单材料双栅MOSFET栅极失调效应研究

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770500

Himanshu Diwakar, S. Nayak, Rohit Kumar

{"title":"Study of Gate Misalignment Effects in Single-Material Double-Gate (SMDG) MOSFET Considering Source and Drain Lateral Gaussian Doping Profile","authors":"Himanshu Diwakar, S. Nayak, Rohit Kumar","doi":"10.1109/EDKCON.2018.8770500","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770500","url":null,"abstract":"Un-intentional misalignment in the gate due to fabrication leads to undesirable device performances. In this paper, effect of gate misalignment has been presented in single-material double-gate (SMDG) MOSFET, based on simulation. The source and drain are considered to be doped with lateral Gaussian doping profile. A simulation study is performed to analyze the gate misalignment effects on the performance. A combination of total four misalignment is simulated, the effects on surface potential, device I-V characteristics and transconductance has been studied. We consider the misalignment at drain and source side of both front and back gate. When misalignment is there both trans-conductance and drain current decreases. Misalignment from drain and source side decreases trans-conductance similarly, but for 45% misalignment in the front gate, 34.8% degradation in the drain current is observed while similar misalignment in back gate causes 57.5% degradation. For simulations 2-D simulations by ATLAS™ from Silvaco Inc. is used and surface potential profile is obtained.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128008391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Study on Impact of LC-Filter Parameters Under Variable Loading Conditions of Three-Phase Voltage Source Inverter 三相电压源型逆变器变负载条件下lc -滤波器参数的影响研究

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770507

S. Mondal, P. Gayen, Kabita Gupta

引用次数: 8

Impact of Source Engineering in Split Drain Tunnel Field Effect Transistor 劈开漏极隧道场效应晶体管源工程的影响

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770395

A. Bhattacharya, Debadipta Basak, S. Reddy, S. Sarkar

引用次数: 1

Study of Effect of downscaling on the Analog/RF Performance of Gate all Around JLMOSFET 降尺度对全环栅JLMOSFET模拟/射频性能影响的研究

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770424

Sarita Misra, Sudhanshu Mohan Biswal, B. Bara, Sanjit Kumar Swain, Sudhansu Kumar Pati

{"title":"Study of Effect of downscaling on the Analog/RF Performance of Gate all Around JLMOSFET","authors":"Sarita Misra, Sudhanshu Mohan Biswal, B. Bara, Sanjit Kumar Swain, Sudhansu Kumar Pati","doi":"10.1109/EDKCON.2018.8770424","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770424","url":null,"abstract":"In this work, we have accomplished an efficient quantitative inquiry on the analog/RF performance of gate-all-around (GAA) junction less Metal oxide field effect transistor(JL MOSFET).Here, we have considered the down scaled gate length and underlap length as two vital design aspects to inquiry the RF/analog performance of the device. A detailed analysis of some figure of merit (FOMs) such as transconductance $(mathrm{g}_{mathrm{m}})$, Outputresistance $(mathrm{R}_{mathrm{o}mathrm{u}mathrm{t}})$, transconductance generation factor(TGF), intrinsic gain, cut off frequency $(mathrm{f}_{mathrm{T}})$, maximum frequency of oscillation $(mathrm{f}_{max})$ are carried out in accordance with regular down scaling of length of gate and different underlap length towards drain and source. In this work, the recommended device is created and its electrical characteristics are studied using ATLAS 2D device simulator. From the results obtained from simulation it is evident that the RF performances of GAA JL-MOSFET are superior in comparison to their analog counterpart with respect to continual downscaling of gate length. The channel is controlled in gate all around structure which reduces the short channel in terms of drain induced barrier lowering and threshold voltage $(mathrm{V}_{mathrm{t}mathrm{h}})$ variation. GAA JL MOSFET is not only more immune to short channel effect(SCEs) but also it is suitable for analog/RF applications because of its high value of $mathrm{g}_{mathrm{m}}$ and $mathrm{f}_{mathrm{T}}, mathrm{f}_{max}$. Hence, this work will be beneficial for upcoming generation of RF circuits needed for modern wireless communication systems and high speed switching application.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126363475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Effect of Strain on Quantum Capacitance of Two Dimensional Intrinsic Graphene 应变对二维本征石墨烯量子电容的影响

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770443

A. Mondal, B. Maiti, Anup Dey

引用次数: 1

Design Optimization of Microdisk Resonator Using Interior Point Algorithm 基于内点算法的微盘谐振器设计优化

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770422

M. Sutagundar, B. G. Sheeparamatti, D. S. Jangamshetti

引用次数: 0

Nano Structured Gas Sensing Device and Its Application in Underground Mines 纳米结构气体传感装置及其在地下矿山中的应用

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770439

Subhrapratim Nath, Anup Dey, Prithviraj Pachal, S. Chowdhury, J. Sing, S. Sarkar

{"title":"Nano Structured Gas Sensing Device and Its Application in Underground Mines","authors":"Subhrapratim Nath, Anup Dey, Prithviraj Pachal, S. Chowdhury, J. Sing, S. Sarkar","doi":"10.1109/EDKCON.2018.8770439","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770439","url":null,"abstract":"Nano gas sensing technology finds its importance where gas sensors used for detecting the toxic gases have been fabricated and modified gradually to enhance its sensitivity and selectivity. Timely and precise monitoring of flammable and hazardous gases inside the mines can aid preventing accidents. Previously Graphene mono-layer has been used as sensing material along with addition of Gold nano-particles on its surface as a sensor device. Various wired and wireless communication with the sensor nodes like Zigbee protocol, IBM Bluemix have been established in recent past and implemented with Internet of Things (IoT)but with limitations. In this paper fabrication of Au based TiO2, CuO, ZnO, WO3 resistive type gas sensors array using sol gel method is proposed for better conduction and Node MCU(ESP8266)is employed as a Wireless Fidelity (WiFi)module in this study which when implemented using Message Queuing Telemetry Transport (MQTT)protocol ensures better efficiency and speed. With increased sensitivity, selectivity and better efficiency the paper aims in resulting a better mine hazard management system.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133087830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Sub-Threshold Drain Current Model of Shell-Core Architecture Double Gate JunctionLess Transistor 壳核结构双栅无结晶体管的亚阈值漏极电流模型

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770485

V. Kumari, Ayush Kumar, Mridula Gupta, M. Saxena

引用次数: 2

Analytical Investigation of Differential Conductance in Submicron HEMT with Two Different Substrates 两种不同衬底亚微米HEMT的差分电导分析研究

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770496

A. Deyasi, Biplab Sen, G. Saha, A. Sarkar

引用次数: 1

Low Temperature and Highly Selective H2 Sensing System Using WO3-ZnO Heterostructure Decorated with Pd Nanoparticle 纳米钯修饰WO3-ZnO异质结构的低温高选择性H2传感系统

2018 IEEE Electron Devices Kolkata Conference (EDKCON) Pub Date : 2018-11-01 DOI: 10.1109/EDKCON.2018.8770419

Subhashis Roy, Anup Dey, Bikram Biswas, Sudhabindu Roy, S. Sarkar

{"title":"Low Temperature and Highly Selective H2 Sensing System Using WO3-ZnO Heterostructure Decorated with Pd Nanoparticle","authors":"Subhashis Roy, Anup Dey, Bikram Biswas, Sudhabindu Roy, S. Sarkar","doi":"10.1109/EDKCON.2018.8770419","DOIUrl":"https://doi.org/10.1109/EDKCON.2018.8770419","url":null,"abstract":"In this paper, highly selective and highly sensitive hydrogen $(mathrm{H}_{2})$ sensing heterostructure gas sensor device is reported with a low cost electronic circuit for easy transmission of hydrogen leakage information. Mixing two different materials $text{WO}_{3}$ and ZnO at 1: 1 ratio with further modification by palladium (Pd)doping results high sensitivity 83.1 % and high selectiveness towards H2and low response and recovery time at 1000ppm (0.1%)H2concentration with respect to other fabricated bare WO3 and bare ZnO sensors. The sensor characteristics are studied using Scanning Electron Microscopy (SEM)and X-Ray Diffraction (XRD) methods which reveal particle size and mixing ratio information in nanoscale region. An easily implementable, low cost and reliable electronic circuit based on multivibrator interfacing with hydrogen sensor is also proposed in the present work which results highly accurate signal frequency variation from 14.1 KHz to 50.3 KHz for $mathrm{H}_{2}$ concentration variation from 0.02%-0.1 % for Pd modified $text{WO}_{3}-$ ZnO sensor.","PeriodicalId":344143,"journal":{"name":"2018 IEEE Electron Devices Kolkata Conference (EDKCON)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116636712","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0