2010 IEEE MTT-S International Microwave Symposium最新文献_第8页

Miniature radio frequency ion trap mass spectrometry 微型射频离子阱质谱法

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5516819

Jeffrey D. Maas, W. Xu, P. Hendricks, W. Chappell

引用次数: 2

A fast clutter cancellation method in quadrature doppler radar for noncontact vital signal detection 正交多普勒雷达非接触生命信号快速消杂波方法

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5516811

Ting-Yueh Chin, Kun-Ying Lin, Sheng-Fuh Chang, Chia-Chan Chang

引用次数: 20

An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology 一种用于AlGaN/GaN技术国防应用的超宽带鲁棒LNA

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5514984

E. Limiti, W. Ciccognani, P. Longhi, C. Mitrano, A. Nanni, M. Peroni

引用次数: 39

RF class-S power amplifiers: State-of-the-art results and potential 射频s类功率放大器:最新的成果和潜力

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5517408

A. Wentzel, C. Meliani, W. Heinrich

引用次数: 55

Design of microwave circuits in ridge-gap waveguide technology 脊隙波导技术中的微波电路设计

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5514731

E. Alfonso, M. Baquero, P. Kildal, A. Valero-Nogueira, E. Rajo-Iglesias, J. I. Herranz

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引用次数: 57

Design of a compact balun with three octant-wavelength coupled lines 具有三根八元波长耦合线的紧凑平衡器的设计

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5515200

Ching‐Wen Tang, Wei Cheng, Janne-Wha Wu, Yuan-Chih Lin

引用次数: 6

A 206–294GHz 3-stage amplifier in 35nm InP mHEMT, using a thin-film microstrip environment 采用薄膜微带环境的35nm InP mHEMT中206-294GHz 3级放大器

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5515989

Z. Griffith, W. Ha, Peter Chen, Daehyun Kim, B. Brar

引用次数: 7

A compact flip chip single die WiFi FEM for smart phone application 用于智能手机应用的紧凑倒装单芯片WiFi FEM

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5517297

C. Yuen, K. Laursen, D. Chu, Y. Pao, A. Chernyakov, P. Heide

引用次数: 9

A highly integrated dual band sige BiCMOS power amplifier that simplifies dual-band WLAN and MIMO front-end circuit designs 一款高度集成的双频sigo BiCMOS功率放大器，简化了双频WLAN和MIMO前端电路设计

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5517664

C. Huang, M. Doherty, P. Antognetti, L. Lam, W. Vaillancourt

引用次数: 7

Broadband, quad flat no-lead (QFN) package developed using standard overmold leadframe technology 宽带，四平面无引线(QFN)封装开发使用标准复模引线框架技术

2010 IEEE MTT-S International Microwave Symposium Pub Date : 2010-05-23 DOI: 10.1109/MWSYM.2010.5517363

Morgan J. Chen, S. Tabatabaei

{"title":"Broadband, quad flat no-lead (QFN) package developed using standard overmold leadframe technology","authors":"Morgan J. Chen, S. Tabatabaei","doi":"10.1109/MWSYM.2010.5517363","DOIUrl":"https://doi.org/10.1109/MWSYM.2010.5517363","url":null,"abstract":"We present design and development of a low-cost, quad flat no-lead (QFN) package that operates over DC to 40 GHz frequencies and is fully compatible with existing leadframe processes. Further, we discuss a novel technique to characterize the package interconnect that first involves removal of plastic from the package. Once the die-paddle is exposed, a probe-ready alumina substrate adapter is inserted and wire bound to allow for GSG probing. This places the internal reference plane where the package would encounter the chip. Plastic is then selectively back-filled in order to maintain dielectric effects in measurement. Insertion loss through a single transition is measured to be less than 0.4 dB across the entire band up through 40 GHz. Return losses are measured to be better than 18 dB over the same band. A bare die broadband voltage-variable attenuator (VVA) is packaged for demonstration. The packaged VVA demonstrates excellent matching with less than 1.7 dB added attenuation due to packaging effects and excellent broadband match over DC-40 GHz. Dynamic range for the VVA QFN is maintained to be greater than 27 dB at 40 GHz.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131095542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3