E. Limiti, W. Ciccognani, P. Longhi, C. Mitrano, A. Nanni, M. Peroni
{"title":"一种用于AlGaN/GaN技术国防应用的超宽带鲁棒LNA","authors":"E. Limiti, W. Ciccognani, P. Longhi, C. Mitrano, A. Nanni, M. Peroni","doi":"10.1109/MWSYM.2010.5514984","DOIUrl":null,"url":null,"abstract":"The design, fabrication and test of a 2–18 GHz monolithic Low Noise Amplifier utilizing 0.25 µm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7dB over the 2 – 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent degradation: to the authors knowledge this is the best RF LNA survivability reported to date in this frequency range using GaN technology.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":"{\"title\":\"An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology\",\"authors\":\"E. Limiti, W. Ciccognani, P. Longhi, C. Mitrano, A. Nanni, M. Peroni\",\"doi\":\"10.1109/MWSYM.2010.5514984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design, fabrication and test of a 2–18 GHz monolithic Low Noise Amplifier utilizing 0.25 µm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7dB over the 2 – 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent degradation: to the authors knowledge this is the best RF LNA survivability reported to date in this frequency range using GaN technology.\",\"PeriodicalId\":341557,\"journal\":{\"name\":\"2010 IEEE MTT-S International Microwave Symposium\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"39\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2010.5514984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5514984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology
The design, fabrication and test of a 2–18 GHz monolithic Low Noise Amplifier utilizing 0.25 µm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7dB over the 2 – 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent degradation: to the authors knowledge this is the best RF LNA survivability reported to date in this frequency range using GaN technology.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
