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Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)最新文献

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Crystal structure and magnetic susceptibility of a Ru/sub 2/Si/sub 3/ single crystal Ru/sub 2/Si/sub 3/单晶的晶体结构和磁化率
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740396
I. J. Ohsugi, T. Kojima, C. B. Vining, M. Sakata, I. Nishida
{"title":"Crystal structure and magnetic susceptibility of a Ru/sub 2/Si/sub 3/ single crystal","authors":"I. J. Ohsugi, T. Kojima, C. B. Vining, M. Sakata, I. Nishida","doi":"10.1109/ICT.1998.740396","DOIUrl":"https://doi.org/10.1109/ICT.1998.740396","url":null,"abstract":"X-ray diffraction photographic experiments and anisotropic magnetic susceptibility measurement were made to examine the crystal structure of a Ru/sub 2/Si/sub 3/ single crystal. The X-ray analysis revealed that the single crystal possesses a tetragonal symmetry. Some very weak X-ray diffraction spots suggest a superstructure with 4-times larger lattice constants than those of the conventional tetragonal lattice. It was found from the susceptibility measurement that the single crystal is diamagnetic at low temperatures ranging from 20 to 300 K, and that the susceptibilities are uni-axially anisotropic, which is consistent with the results of the X-ray diffraction experiments. It is concluded from the diamagnetic susceptibilities that coordinate bonding is established between Si and Ru atoms, which is consistent with the results of a previous magnetic susceptibility analysis of CrSi/sub 2/.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131135550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
III-V based heterostructure integrated thermionic coolers III-V基异质结构集成热离子冷却器
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740356
A. Shakouri, P. Abraham, C. Labounty, J. E. Bowers
{"title":"III-V based heterostructure integrated thermionic coolers","authors":"A. Shakouri, P. Abraham, C. Labounty, J. E. Bowers","doi":"10.1109/ICT.1998.740356","DOIUrl":"https://doi.org/10.1109/ICT.1998.740356","url":null,"abstract":"Solid state coolers based on III-V materials can be monolithically integrated with optoelectronic and high-speed electronics components. The use of thermionic emission in heterostructures will permit enhanced cooling capacities beyond the linear transport regime. Monte Carlo calculations are used to study the main energy relaxation mechanisms in III-V thin barrier heterostructures, i.e., polar optical phonon and intervalley scattering. The bias dependence of electron energy relaxation length is analyzed and important parameters for the design of heterostructure integrated thermionic (HIT) coolers are identified. Single-stage InGaAsP based HIT coolers have been fabricated and characterized. Cooling up to 0.7 K over a one micron thick barrier has been measured.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131421216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Effects of PbS doping on thermal conductivity of n-type CoSb/sub 3/ PbS掺杂对n型CoSb/ sub3 /导热性的影响
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740386
H. Anno, H. Tashiro, H. Kaneko, K. Matsubara
{"title":"Effects of PbS doping on thermal conductivity of n-type CoSb/sub 3/","authors":"H. Anno, H. Tashiro, H. Kaneko, K. Matsubara","doi":"10.1109/ICT.1998.740386","DOIUrl":"https://doi.org/10.1109/ICT.1998.740386","url":null,"abstract":"Additional PbS doping of heavily doped n-type Co/sub 1-x/M/sub x/Sb/sub 3/ (M=Pd/Pt) has been studied to reduce the thermal conductivity of the material. Although the heavily doped n-type material has good electrical properties, the thermal conductivity is relatively high (about 0.06 W cm/sup -1/ K/sup -1/). If PbS particles are dispersed throughout the host material, they can be expected to act as phonon scattering centers. Polycrystalline samples were prepared by hot pressing or spark plasma sintering the admixture of Co/sub 1-x/M/sub x/Sb/sub 3/ (M=Pd/Pt) and PbS fine powders. Samples were characterized by X-ray diffraction, electron probe microanalysis, and optical microscope observation. Measurements of the electrical conductivity, the Hall coefficient, the Seebeck coefficient, and the thermal conductivity were performed to study the influence of PbS doping on the electrical and thermoelectrical properties. It was found that PbS particles were uniformly dispersed throughout Co/sub 1-x/M/sub x/Sb/sub 3/ (M=Pd/Pt) host without any decomposition. About 30% reduction of the thermal conductivity can be achieved by additional PbS doping, keeping good electrical properties. This can be attributed to the phonon scattering effect of PbS particles. As a result, the thermoelectric figure of merit of the material increases to more than 1/spl times/10/sup -3/ K/sup -1/.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121779005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Case study on thermoelectric generation system utilizing the exhaust gas of interal-combustion power plant 利用内燃电厂废气的热电发电系统实例研究
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740421
T. Furue, T. Hayashida, Y. Imaizumi, T. Inoue, K. Nagao, A. Nagai, I. Fujii, T. Sakurai
{"title":"Case study on thermoelectric generation system utilizing the exhaust gas of interal-combustion power plant","authors":"T. Furue, T. Hayashida, Y. Imaizumi, T. Inoue, K. Nagao, A. Nagai, I. Fujii, T. Sakurai","doi":"10.1109/ICT.1998.740421","DOIUrl":"https://doi.org/10.1109/ICT.1998.740421","url":null,"abstract":"This paper discusses the effects of element length, installation of fins and exhaust gas flow rate on the power output and the conversion efficiency of a thermoelectric generation system using the exhaust gas of an internal combustion plant. The thermoelectric module consists of bismuth-tellurium based thermoelectric elements, electrodes, insulators, etc. A thermoelectric generation system consists of thermoelectric generation modules sandwiched by two square heat transfer tubes inside which exhaust gas and cooling water flow in a counter-current. It is supposed that the thermoelectric generation system recovers the heat of the exhaust gas of 60000 Nm/sup 3//h at 370/spl deg/C of an internal-combustion plant whose declared power is 10000 kW until it falls to 180/spl deg/C, and converts it into electricity. The power generation performance is obtained by the heat balance equations in the steady status between fluids and thermoelectric elements for each thermoelectric element inside the system and performing interactive calculations repeatedly. The power generation performance depends on the element length, the heat transfer area inside the hear transfer tube and the exhaust gas flow rate. As the difference between the temperature applied on the upper portion of the element and the temperature applied on the lower portion of the element becomes larger, the power generation performance is improved. The power output of 184 kW is recovered from the heat of exhaust gas of an internal-combustion plant whose declared output is 10000 kW when the element length is 15.2 mm, the fin efficiency is 4 and the exhaust gas flow rate per tube is 1212 Nm/sup 3//h.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115837017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
The next generation of thermoelectric materials 下一代热电材料
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740376
G. Nolas, G. Slack, J. Cohn, S. Schujman
{"title":"The next generation of thermoelectric materials","authors":"G. Nolas, G. Slack, J. Cohn, S. Schujman","doi":"10.1109/ICT.1998.740376","DOIUrl":"https://doi.org/10.1109/ICT.1998.740376","url":null,"abstract":"From the mid-1950s to the present the major design concepts for bulk thermoelectrics were those used by A.V. Ioffe. These were to select semiconducting compounds of heavy elements from the lower part of the periodic table and then to reduce the lattice thermal conductivity by forming mixed crystals. This approach led to the thermoelectrics based on Bi, PbTe and Bi/sub 2/Te/sub 3/. In this study we report on ongoing research of a new type of semiconducting material system with an open crystal lattice structure. The concept of a \"phonon glass and an electron crystal\" (PGEC) is at the heart of this investigation. Such materials possess electronic properties normally associated with good semiconductor single crystals and thermal conductivity normally associated with amorphous materials. The introduction of this concept to thermoelectrics is one of the most significant innovations in thermoelectrics in the last 30 years. We will report on transport properties measurements on some of these new materials, some of which possess ZT values higher than any new materials presently under investigation.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124766565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Oxidation resistance of glass coated PbTe 玻璃镀膜PbTe的抗氧化性能
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740436
L. Chen, T. Goto, R. Tu, T. Hirai
{"title":"Oxidation resistance of glass coated PbTe","authors":"L. Chen, T. Goto, R. Tu, T. Hirai","doi":"10.1109/ICT.1998.740436","DOIUrl":"https://doi.org/10.1109/ICT.1998.740436","url":null,"abstract":"The SiO/sub 2/-ZnO-B/sub 2/O/sub 3/-Na/sub 2/O system glass with various composition was coated on PbTe surface in order to improve the oxidation resistance of PbTe. The oxidation behavior of the glass-coated PbTe was investigated by measuring the mass change, and the effects of the glass composition on the oxidation behavior were discussed. The addition of PbO/spl middot/TeO/sub 2/ to the SiO/sub 2/-ZnO-B/sub 2/O/sub 3/-Na/sub 2/O system glass reduced the microcracks and improved the adhesion of the glass to PbTe. The mass change of the glass coated PbTe decreased with increasing PbO/spl middot/TeO/sub 2/ content in the glass. The PbTe specimen coated by the glass containing 60 mass% PbO/spl middot/TeO/sub 2/ exhibited excellent oxidation resistance, which showed no mass changes at 773 K for 360 ks.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133634933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermoelectric microsensor for heat flux measurement 热通量测量用热电微传感器
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740355
F. Volklein, E. Kessler
{"title":"Thermoelectric microsensor for heat flux measurement","authors":"F. Volklein, E. Kessler","doi":"10.1109/ICT.1998.740355","DOIUrl":"https://doi.org/10.1109/ICT.1998.740355","url":null,"abstract":"We present a new microsensor for heat flux measurement. The sensor is prepared by using thin Bi/sub 1-x/Sb/sub x/ films. which are patterned by photolithography. The films are deposited on 800 nm thin membranes of silicon oxide/silicon nitride. Which are structurized by micromachining (anisotropic etching of silicon wafers). The sensor consists of ten membranes with 889 thermocouples on each membrane. The high density of thermocouples on a small membrane size of 22 mm/sup 2/ enables the high sensitivity of 5,87 mV/(W/m/sup 2/), whereas the sensitivity of conventional heat flux sensors is only 0.07 mV/(W/m/sup 2/). This increase is achieved by the microlithographic design. The results of the sensor modelling and the design optimization are presented. The sensor can be calibrated absolutely by using an integrated thin-film heater, which generates a well-defined heat flux (self-calibration).","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122766918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Thermoelectric properties of p-type Bi-Sb-Te crystals with a composite structure 复合结构p型Bi-Sb-Te晶体的热电性质
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740341
K. Ebisumori, H. Tauchi, Y. Shinohara, I. Nishida
{"title":"Thermoelectric properties of p-type Bi-Sb-Te crystals with a composite structure","authors":"K. Ebisumori, H. Tauchi, Y. Shinohara, I. Nishida","doi":"10.1109/ICT.1998.740341","DOIUrl":"https://doi.org/10.1109/ICT.1998.740341","url":null,"abstract":"The p-type Bi-Sb-Te compounds are most useful for electric cooling devices at room temperature. When Bi-Sb-Te system is Te-rich, lamellar precipitates can be formed according to the Sb-Te phase diagram. How the precipitates affect the thermoelectric properties of Bi-Sb-Te crystals has been investigated in this paper. The Bi-Sb-Te crystals containing some precipitates were obtained from the Te-rich Bi-Sb-Te boules grown by Bridgeman method. The thermoelectric properties of the crystals were changed with the composition and the crystal growth rate. When the composition was (Bi/sub 0.21/Sb/sub 0.79/)/sub 2/Te/sub 3.15/ and also the growth rate was 7.2 mm/h, the figure of merit was highest. The precipitates consisted of Te and Bi-Sb-Te lamellas.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116501351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermoelectricity, thinking of the past and tomorrow 热电，想着过去和明天
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740312
S. Tanuma
{"title":"Thermoelectricity, thinking of the past and tomorrow","authors":"S. Tanuma","doi":"10.1109/ICT.1998.740312","DOIUrl":"https://doi.org/10.1109/ICT.1998.740312","url":null,"abstract":"The establishment of intrinsic semiconductivity of tellurium in the 1940s to 50s and the discovery of semiconductivity in the solid solution Bi-Sb alloy system in the 1950s and 60s are described in relation to thermoelectricity. The development of Peltier cooling devices using the Bi/sub 2/Te/sub 3/ family is also mentioned. As with recent studies, the merits of applying magnetic fields to thermoelectric materials are examined. Bi/sub 88/Sb/sub 12/ and the same alloy doped with various amounts of Sn were exposed to a magnetic field of 0.8 tesla. The magnetic field had a remarkable influence on the alloys; sometimes the Seebeck coefficient was enhanced by more than 50% and the sign of the Seebeck coefficient was changed. An application of a gradient magnetic field on a thermoelectric rod specimen possibly substitutes FGM. The Ettingshausen temperature gradient on Bi/sub 88/Sb/sub 12/ was also studied.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116632858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermoelectric properties of the hot-pressed Bi/sub 2/(Te,Se)/sub 3/ alloys with the Bi/sub 2/Se/sub 3/ content and addition of scattering center 随着Bi/sub 2/Se/sub 3/含量的增加和散射中心的加入，热压Bi/sub 2/(Te,Se)/sub 3/合金的热电性能
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740346
Hang-Chong Kim, Sun-Kyung Lee, T. Oh, D. Hyun
{"title":"Thermoelectric properties of the hot-pressed Bi/sub 2/(Te,Se)/sub 3/ alloys with the Bi/sub 2/Se/sub 3/ content and addition of scattering center","authors":"Hang-Chong Kim, Sun-Kyung Lee, T. Oh, D. Hyun","doi":"10.1109/ICT.1998.740346","DOIUrl":"https://doi.org/10.1109/ICT.1998.740346","url":null,"abstract":"Thermoelectric properties of the hot-pressed Bi/sub 2/(Te/sub 1-x/Se/sub x/)/sub 3/ alloys, prepared by melting/grinding and mechanical alloying, were investigated with the Bi/sub 2/Se/sub 3/ content. Whereas a p-n transition occurred at about 30 mol% Bi/sub 2/Se/sub 3/ in Bi/sub 2/(Te/sub 1-x/Se/sub x/)/sub 3/ single crystals, the hot-pressed specimens exhibited n-type conduction for all compositions of 0/spl les/x/spl les/1. Among the hot-pressed specimens, a maximum figure-of-merit of 1.92/spl times/10/sup -3//K was obtained with the Bi/sub 2/(Te/sub 0.85/Se/sub 0.15/)/sub 3/ composition. Thermoelectric properties of the mechanically-alloyed and hot-pressed Bi/sub 2/(Te/sub 0.85/Se/sub 0.15/)/sub 3/ were also investigated with addition of BN powders as scattering centers.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116300691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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