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Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)最新文献

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Mossbauer effect studies of filled skutterudite compounds 填充方钨矿化合物的穆斯堡尔效应研究
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740384
H. Kitagawa, S. Kondo, K. Oda, M. Hasaka, T. Morimura
{"title":"Mossbauer effect studies of filled skutterudite compounds","authors":"H. Kitagawa, S. Kondo, K. Oda, M. Hasaka, T. Morimura","doi":"10.1109/ICT.1998.740384","DOIUrl":"https://doi.org/10.1109/ICT.1998.740384","url":null,"abstract":"Mossbauer spectra of filled skutterudite compound of LaFe/sub 4/Sb/sub 12/, La/sub 1.71/Fe/sub 4/Sb/sub 12/, CeFe/sub 4/Sb/sub 12/ and Ce/sub 1.71/Fe/sub 4/Sb/sub 12/ are measured in order to investigate the hyperfine state of iron atoms. Iron atoms in these compounds are in para-magnetic states and quadrupole splitting (Q.S) differs between LaFe/sub 4/Sb/sub 12/ and CeFe/sub 4/Sb/sub 12/ specimens whereas, no difference was observed in isomer shifts (I.S). Due to calculations, it is proposed that the difference in Q.S is attributed to the difference in the density of state at Fermi surface.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"234 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114384369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoelectric properties of Zn-In complex chalcogenides Zn-In络合硫属化合物的热电性质
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740451
W. Seo, R. Otsuka, H. Okuno, K. Koumoto
{"title":"Thermoelectric properties of Zn-In complex chalcogenides","authors":"W. Seo, R. Otsuka, H. Okuno, K. Koumoto","doi":"10.1109/ICT.1998.740451","DOIUrl":"https://doi.org/10.1109/ICT.1998.740451","url":null,"abstract":"A ceramic compact of ZnIn/sub 2/S/sub 4/ with spinel structure and another polymorphism of ZnIn/sub 2/S/sub 4/ with a layer structure known as IIIa phase were synthesized by reaction-sintering of the mixed powder of ZnS and In/sub 2/S/sub 3/ at 450/spl deg/C and 800/spl deg/C under Ar (containing 1% H/sub 2/) atmosphere, respectively. Their thermoelectric properties were investigated in the temperature range from 200/spl deg/ to 600/spl deg/C. Power factor of IIIa type was much larger than that of the spinel type, although it was slightly lower than maximum power factor of the oxide homologous compounds ((ZnO)/sub m/In/sub 2/O/sub 3/). To increase the thermoelectric properties of ZnIn/sub 2/S/sub 4/ a c-plane oriented sintered body of IIIa phase was successfully fabricated by a usual ceramic process. The power factor in the direction perpendicular to c-axis was larger than that in the direction parallel to c-axis due to higher electrical conductivity in the former direction.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"20 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123422015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Properties of thermoelectric materials prepared by gas atomizing and sintering process 气体雾化烧结制备热电材料的性能研究
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740387
H. Uchida, V. Crnko, H. Tanaka, A. Kasama, K. Matsubara
{"title":"Properties of thermoelectric materials prepared by gas atomizing and sintering process","authors":"H. Uchida, V. Crnko, H. Tanaka, A. Kasama, K. Matsubara","doi":"10.1109/ICT.1998.740387","DOIUrl":"https://doi.org/10.1109/ICT.1998.740387","url":null,"abstract":"The development of mass production process of thermoelectric materials is important for practical use. For this purpose, it has been attempted to produce and estimate the thermoelectric materials of CoSb/sub 3/, (CoPdPt)Sb/sub 3/ and CeFe/sub 3/CoSb/sub 12/ prepared by gas atomizing and sintering. It is clear that the mean diameter of gas atomized particles obtained in this work is not only less than 100 /spl mu/m, but also the inner structure of particles is very fine. For the sintering method, hot pressing process and noteworthy spark plasma sintering technique for new materials were applied. In both treatments, it is apparent that there is a difference in grain boundary structure observed by optical microscope and in time required to obtain enough sintered condition. There however is no remarkable distinction of thermoelectric properties between hot press sintered and spark plasma sintered materials, of which atomic structures and compositions are almost same as a results of X-ray diffraction and EPMA analysis.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123516003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermoelectric properties of Ru/sub 2/Si/sub 3/ prepared by FZ and arc melting methods FZ法和电弧熔炼法制备Ru/sub 2/Si/sub 3/的热电性能
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740402
Y. Arita, T. Miyagawa, T. Matsui
{"title":"Thermoelectric properties of Ru/sub 2/Si/sub 3/ prepared by FZ and arc melting methods","authors":"Y. Arita, T. Miyagawa, T. Matsui","doi":"10.1109/ICT.1998.740402","DOIUrl":"https://doi.org/10.1109/ICT.1998.740402","url":null,"abstract":"Thermoelectric properties of undoped and Rh-doped Ru/sub 2/Si/sub 3/ Prepared by arc melting method and undoped Ru/sub 2/Si/sub 3/ by floating zone melting (FZ) method were measured. Electrical resistivity of the undoped arc-melted Ru/sub 2/Si/sub 3/ was very high because of the cracks along the grain boundary. By doping Rh the number of cracks and the value of resistivity in n-type Ru/sub 2/Si/sub 3/ were decreased, but the absolute value of Seebeck coefficient did not so change. In the case of undoped single crystalline Ru/sub 2/Si/sub 3/ prepared by FZ method, low electrical resistivity was obtained indicating Ru/sub 2/Si/sub 3/ as the promising good thermoelectric material.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116855640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Thermoelectric properties of the Ce/sub 1-x/Ln/sub x/Fe/sub 4/Sb/sub 12/ (Ln=rare earth) skutterudites Ce/sub - 1-x/Ln/sub -x/ Fe/sub - 4/Sb/sub - 12/ (Ln=稀土)角长石的热电性质
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740385
D. M. Rowe, V. Kuznetsov, L. Kuznetsova
{"title":"Thermoelectric properties of the Ce/sub 1-x/Ln/sub x/Fe/sub 4/Sb/sub 12/ (Ln=rare earth) skutterudites","authors":"D. M. Rowe, V. Kuznetsov, L. Kuznetsova","doi":"10.1109/ICT.1998.740385","DOIUrl":"https://doi.org/10.1109/ICT.1998.740385","url":null,"abstract":"A number of filled skutterudites LnFe/sub 4/Sb/sub 12/ (Ln=La, Ce, Sm, Eu, Er, Yb) have been prepared by melting the elements followed by hot pressing. The compounds were characterised by X-ray analysis. Electrical resistivity and Seebeck coefficient measurements have been performed over the temperature range from 300 to 800 K. Room temperature Hall coefficient and carrier mobilities are also measured. Several samples Ce/sub 0.8/Ln/sub 0.2/Fe/sub 4/Sb/sub 12/ have been prepared in order to study the effect of partial substitution in the rare-earth sublattice on the transport properties of the filled skutterudites.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128260718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ways of increasing efficiency and reliability of generator modules realized in "Altec" modules rational fields of use 在“Altec”模块的合理使用领域中，实现了提高发电模块效率和可靠性的途径
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740416
L. Anatychuk, V. Razinkov, V. Mikhailovsky
{"title":"Ways of increasing efficiency and reliability of generator modules realized in \"Altec\" modules rational fields of use","authors":"L. Anatychuk, V. Razinkov, V. Mikhailovsky","doi":"10.1109/ICT.1998.740416","DOIUrl":"https://doi.org/10.1109/ICT.1998.740416","url":null,"abstract":"The structural and technological ways of increasing the efficiency and reliability of single-cascade modules for thermoelectric generators with maximum operating temperature 300-350/spl deg/C have been determined. The results of testing Altec 1010-1039 generator type modules are given that determine the basic energy and reliability parameters. The structure of a special measuring installation with increased metrological characteristics designed for valid measurement of generator type module parameters in the operating temperature range has been considered. The variants of various purpose devices are given where the advantages of Altec generator type modules are most efficiently used. The rational fields of using these modules have been formulated.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128663648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Numerical computation of thermoelectric and thermomagnetic effects 热电和热磁效应的数值计算
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740324
H. Okumura, S. Yamaguchi, H. Nakamura, K. Ikeda, K. Sawada
{"title":"Numerical computation of thermoelectric and thermomagnetic effects","authors":"H. Okumura, S. Yamaguchi, H. Nakamura, K. Ikeda, K. Sawada","doi":"10.1109/ICT.1998.740324","DOIUrl":"https://doi.org/10.1109/ICT.1998.740324","url":null,"abstract":"Phenomenological equations describing the Seebeck, Hall, Nernst, Peltier, Ettingshausen, and Righi-Leduc effects are numerically solved for the temperature, electric current, and electrochemical potential distributions of semiconductors under magnetic field. The results are compared to experiments.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130196554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Electroconductivity of profiled crystals based on Bi/sub 2/Te/sub 3/ grown by direct crystallization in molding die with thin cavity Bi/sub - 2/Te/sub - 3/异型晶型在薄型腔模压模内的电导率
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740363
J.M. Belov, M. Volkov, S.M. Manyakin
{"title":"Electroconductivity of profiled crystals based on Bi/sub 2/Te/sub 3/ grown by direct crystallization in molding die with thin cavity","authors":"J.M. Belov, M. Volkov, S.M. Manyakin","doi":"10.1109/ICT.1998.740363","DOIUrl":"https://doi.org/10.1109/ICT.1998.740363","url":null,"abstract":"Profiled crystals based on Bi/sub 2/Te/sub 3/ in the form of flat plates were grown by direct crystallization in molding die with thin cavity. Some results of electroconductivity measurements on n- and p-type samples are presented. The melt compositions are found which ensure the most uniform electroconductivity profiles along the length of ingots.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130993512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lattice thermal resistivity and two valence band model a new understanding of transport properties of p-(Bi/sub 1-x/Sb/sub x/)/sub 2/Te/sub 3/ 点阵热电阻率和双价带模型对p-(Bi/sub - 1-x/Sb/sub -x/)/sub - 2/Te/sub - 3/输运性质的新认识
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740323
E. Muller, H. Sussmann
{"title":"Lattice thermal resistivity and two valence band model a new understanding of transport properties of p-(Bi/sub 1-x/Sb/sub x/)/sub 2/Te/sub 3/","authors":"E. Muller, H. Sussmann","doi":"10.1109/ICT.1998.740323","DOIUrl":"https://doi.org/10.1109/ICT.1998.740323","url":null,"abstract":"Usually (Bi/sub 1-x/Sb/sub x/)/sub 2/Te/sub 3/ is nowadays understood as a material with a well-known transport behaviour. This may hold true to a certain extent for optimised material at room temperature. In contrast, different conditions occur for material dedicated to low temperature cooling (100-200 K), as well as above room temperature, when thermal excitation of carriers becomes relevant. Both for high and low T transports, the band structure near the gap is of importance. From former experiments at He temperature a small valence band splitting was concluded. But attempts to interpret the anisotropic charge transport in a two-band model failed. Therefore, the single-band model established itself as a standard. Nevertheless, there are some questions which find no explanation within this picture. Detailed investigation concerning the lattice thermal resistivity did not yield the expected nearly linear temperature dependence. Instead, from experimental data a right-hand curvature is observed, predominantly at lower temperature. In the 200-300 K region a weak oscillation is superimposed to the monotonously increasing curve. These peculiarities are understandable as artefacts due to the single-band evaluation. Within a two-band model a nearly linear lattice thermal resistivity is obtained assuming an increased Lorenz number L due to unipolar diffusion. Furthermore, an oscillation of L due to non-equivalent intervalley scattering is evident, in good agreement to the calculated T dependence of the Fermi level. Conclusively, improved values of the lattice thermal resistivity are given. Thus, an estimation of the maximum figure of merit can be deduced yielding higher values in the 100-200 K region than previously calculated.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125330769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermoelectric properties of polycrystalline bismuth and bismuth-antimony alloys 多晶铋和铋锑合金的热电性能
Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365) Pub Date : 1998-05-24 DOI: 10.1109/ICT.1998.740336
V. Grabov, O.N. Uryupin, V. A. Komarov
{"title":"Thermoelectric properties of polycrystalline bismuth and bismuth-antimony alloys","authors":"V. Grabov, O.N. Uryupin, V. A. Komarov","doi":"10.1109/ICT.1998.740336","DOIUrl":"https://doi.org/10.1109/ICT.1998.740336","url":null,"abstract":"Transport and thermoelectric properties of polycrystalline bismuth-antimony alloys was investigated at temperature 80-300 K. To minimize of alloy liquation influence the polycrystalline samples was prepared from initial homogeneous single crystals by powdering pressing and annealing. Polycrystalline condition influence on the bismuth-antimony alloy transport phenomena consist in the restriction of charge carriers mobility's and energy dependence of carriers relaxation time changes. At T<180 K thermoelectric figure of merit of polycrystalline bismuth-antimony samples is smaller than initial Bi-Sb single crystal ones. At T>180 K the polycrystalline bismuth-antimony thermoelectric figure of merit is situated nearer to average for Bi-Sb single crystals, that does perspective polycrystalline bismuth-antimony thermoelectric application.","PeriodicalId":338603,"journal":{"name":"Seventeenth International Conference on Thermoelectrics. Proceedings ICT98 (Cat. No.98TH8365)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122402746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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