2020 European Conference on Circuit Theory and Design (ECCTD)最新文献

Introduction to Physically Unclonable Fuctions: Properties and Applications 物理不可克隆函数导论:性质和应用

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218404

M. Garcia-Bosque, Guillermo Díez-Señorans, C. Sánchez-Azqueta, S. Celma

引用次数: 7

Synergetic Algorithm for Power-Down Synthesis 断电合成的协同算法

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218442

M. Neuner, H. Graeb

引用次数: 1

On the Development of MCU-based ad hoc HW Interface Circuitry for Memristor Characterization 基于单片机的忆阻器表征专用硬件接口电路的研制

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218418

Robinson De La Fuente, I. Vourkas, M. Pérez

{"title":"On the Development of MCU-based ad hoc HW Interface Circuitry for Memristor Characterization","authors":"Robinson De La Fuente, I. Vourkas, M. Pérez","doi":"10.1109/ECCTD49232.2020.9218418","DOIUrl":"https://doi.org/10.1109/ECCTD49232.2020.9218418","url":null,"abstract":"The evolution of resistive switching device (memristor) technology during the last ten years has shown the great potential of such emerging nanoelectronic devices in several potential applications, ranging from memory to computing and sensing. As memristor technology is continuously maturing, more devices become commercially available and thus accessible to investigators working on relevant research topics, as well as to university teaching labs and academics who wish to incorporate memristor-related experiments in their classrooms. However, experimental work on circuits with memristors requires particular caution and supervision, given that such devices are both highly sensitive (i.e., can easily burn out) and still quite expensive compared to other discrete circuit components. In this context, the development of integrated instrumentation solutions that provide a safe way to experimental work with memristors is becoming increasingly relevant, and some such tools have already reached the market. In this direction, we present some early results from our experience on the design and development of an instrumentation printed circuit board (PCB), designed to provide an ad hoc low-cost solution for measurements on memristors. The driving circuitry on the PCB is interfaced through a microcontroller-based system, providing easy programming and acquisition for a variety of measurements.","PeriodicalId":336302,"journal":{"name":"2020 European Conference on Circuit Theory and Design (ECCTD)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123965583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Physical Security of Ring-based PUF 基于环的PUF物理安全性研究

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218378

L. Bossuet

引用次数: 0

Fast leak localization based on acoustic signal attenuation for pipelines in high-noise environment 基于声信号衰减的高噪声环境下管道泄漏快速定位

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218320

Georgios-Panagiotis Kousiopoulos, S. Nikolaidis

{"title":"Fast leak localization based on acoustic signal attenuation for pipelines in high-noise environment","authors":"Georgios-Panagiotis Kousiopoulos, S. Nikolaidis","doi":"10.1109/ECCTD49232.2020.9218320","DOIUrl":"https://doi.org/10.1109/ECCTD49232.2020.9218320","url":null,"abstract":"Pipeline networks are being used worldwide for a variety of reasons. A major problem that poses an obstacle to the safe and normal operation of a pipeline network is the occurrence of leaks. In the past years a large number of leak localization methods have been developed and they have presented appreciable accuracy in the estimation of the leak position. However, apart from the accuracy of such a method, another important factor is the amount of time needed for a system implementing this method to provide results, which is a topic rarely encountered in the literature. In this article a leak localization method based on the attenuation of acoustic leak signals propagating in a pipeline is presented. The minimum duration of the measurements needed for avoiding accuracy degradation is determined. By this approach accurate results in shorter time than the traditional time-delay estimation methods are achieved. Furthermore, since the proposed method is designed for the environment of an oil refinery, its efficiency is also tested under high-noise conditions and the corresponding results are provided.","PeriodicalId":336302,"journal":{"name":"2020 European Conference on Circuit Theory and Design (ECCTD)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123997478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evidence of Nanoparticle Migration in Polymeric Hybrid Memristor Devices 聚合物杂化忆阻器中纳米粒子迁移的证据

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218360

A. H. Jaafar, A. Gee, A. O. Hamza, Charlotte J. Eling, J. Bouillard, A. Adawi, N. Kemp

引用次数: 3

Implementation of Logical and Memory Functions with Memristor Cellular Nonlinear Networks 用忆阻器细胞非线性网络实现逻辑和记忆功能

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218420

A. Ascoli, I. Messaris, A. S. Demirkol, R. Tetzlaff, L. Chua, D. Biolek, V. Biolková, Z. Kolka

{"title":"Implementation of Logical and Memory Functions with Memristor Cellular Nonlinear Networks","authors":"A. Ascoli, I. Messaris, A. S. Demirkol, R. Tetzlaff, L. Chua, D. Biolek, V. Biolková, Z. Kolka","doi":"10.1109/ECCTD49232.2020.9218420","DOIUrl":"https://doi.org/10.1109/ECCTD49232.2020.9218420","url":null,"abstract":"The peculiar combined capability of nonvolatile resistance switching memories to store and process data within a common nanoscale physical medium allows to implement disruptive mem-computing paradigms in hybrid circuits leveraging the compatibility of CMOS and memristive technologies. This may pave the way toward the future development of minaturized, lightweight, ultra-dense, high-speed and low-power universal memcomputers with sensing functionality on board. Since the availability of technical products of this kind would respond to the current demands of the Internet-of-Things industry, it is timely to investigate the functionalities and limitations of memristive memcomputing structures, such as those arranged in cellular bio-inspired architectures. The adoption of memristors in circuit design brings new life to nonlinear system theory, since standard analysis and synthesis techniques from linear system theory are no longer applicable for the investigation of highly-nonlinear electronic systems. This paper demonstrates how the use of standard and novel concepts from nonlinear system theory allow to design a Memristor Cellular Nonlinear Network for the execution of pixel-wise logical boolean functions on binary images, and the concurrent storage of input or output data into the memristive memory bank, providing clear evidence for the truly mem-computing character of its memristor-centered signal processing paradigm.","PeriodicalId":336302,"journal":{"name":"2020 European Conference on Circuit Theory and Design (ECCTD)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121706612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

General Information 一般信息

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ecctd49232.2020.9218363

引用次数: 0

Wedge Filters Designed From 1D Digital Prototypes 从1D数字原型设计的楔形滤波器

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218422

R. Matei

引用次数: 0

Design of Low-Temperature and Radiation-Hardened JFET Direct Coupled Op-Amps without Current Mirrors 无电流镜的低温抗辐射JFET直接耦合运放设计

2020 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2020-09-01 DOI: 10.1109/ECCTD49232.2020.9218291

A. Bugakova, N. Prokopenko, A. Titov

{"title":"Design of Low-Temperature and Radiation-Hardened JFET Direct Coupled Op-Amps without Current Mirrors","authors":"A. Bugakova, N. Prokopenko, A. Titov","doi":"10.1109/ECCTD49232.2020.9218291","DOIUrl":"https://doi.org/10.1109/ECCTD49232.2020.9218291","url":null,"abstract":"The offset voltage (Voff) of the BJT and CMOS two-stage operational amplifiers (Op-Amps) substantially depends on the numerical values (differences from unit) from the current ratio (Ki≈1) of the current mirrors (CM). The CM parameter is also influenced by the Early voltage of their dominant active components. For the JFET technologies (Si, SiC, GaAs and others) with a low noise level, there are no high-quality CMs of this class today, or their construction (at Ki=1) is associated with a significant deterioration of other parameters of the Op-Amp. Nowadays, the current JFET mirrors are the weakest link in modern JFET analog circuitry and it is impractical to use them in the structure of the JFET Op-Amps. For the first time the article poses and solves the problem of determining the conditions for exclusion of the CMs in the JFET Op-Amp for the case when it is necessary to obtain a small Voff. It is shown that for this, three identical reference current sources should be used, which are implemented on the JFET transistors and the local negative feedback resistors. The Voff of the Op-Amps with the classical and proposed architectures are compared. The computer simulation results of the offset voltage (Voff) in the LTspice environment are presented, which show that silicon JFet direct coupled Op-Amps without CM have a systematic component of Voff at the level of tens to hundreds of microvolts and voltage gain of more than 80 dB in a wide temperature range.","PeriodicalId":336302,"journal":{"name":"2020 European Conference on Circuit Theory and Design (ECCTD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114824247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0