2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)最新文献

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Modification of the ray-tracing aberrometry method 射线追踪像差法的改进
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939810
V. Kovalsky, P. Yaganov
{"title":"Modification of the ray-tracing aberrometry method","authors":"V. Kovalsky, P. Yaganov","doi":"10.1109/ELNANO.2017.7939810","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939810","url":null,"abstract":"This paper describes current approach of the aberrometry, especially, the ray-tracing method. Features and issues of the ray-tracing aberrometry are mentioned. Proposed modified approach of transverse aberration and wavefront function defining. It allows take into account angle between trace ray and eye-axis. According to the estimation, this angle can be up to 25 degrees. Additionally, for presented example of aberrometer with simplified hardware was shown how the new method can correct measurement errors caused by decreased tracing accuracy.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126315277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation of defects in one-dimensional photonic crystal 一维光子晶体缺陷的模拟
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939818
V. Moskaliuk, Yevhen Tsyba
{"title":"Simulation of defects in one-dimensional photonic crystal","authors":"V. Moskaliuk, Yevhen Tsyba","doi":"10.1109/ELNANO.2017.7939818","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939818","url":null,"abstract":"A set of modeling defects in one-dimensional photonic crystal and their impact on reflectivity as a function of the wavelength of the incident wave is presented. Electric-field profiles for various situations are shown. The simulation based on the transfer-matrix method.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124187765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Dynamic 3D sensor array X-ray digital receptors 动态三维传感器阵列x射线数字接收器
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939778
S. Miroshnychenko, A. Nevgasymyi
{"title":"Dynamic 3D sensor array X-ray digital receptors","authors":"S. Miroshnychenko, A. Nevgasymyi","doi":"10.1109/ELNANO.2017.7939778","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939778","url":null,"abstract":"X-ray digital receptor structure in a form of array partial picture forming sensors (sensors array — SA), allows to optimize parameters of X-ray receptors for fluoroscopic, linear and cone beam tomography units. Analysis efficiency of sensor arrays, based on detective quantum efficiency is the subject of this article.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122790686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High speed, low-jitter level shifter for high speed ICs 用于高速集成电路的高速、低抖动电平移位器
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939742
Sh. Melikyan Vazgen, G. Levon, T. K. Karen, E. M. Ara
{"title":"High speed, low-jitter level shifter for high speed ICs","authors":"Sh. Melikyan Vazgen, G. Levon, T. K. Karen, E. M. Ara","doi":"10.1109/ELNANO.2017.7939742","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939742","url":null,"abstract":"A design and simulation of high-speed level shifter that reduces jitter deviations is presented. The proposed methodology of design provides robust mechanism to boost level-shifter output edges and improves transmitting signal quality. The edge detection circuit was used to generate pulses during signal edges and activates additional fingers of level shifter. The presented level-shifter circuit can be used in the I/O circuits of such standards as DDR, USB, PCI etc. The level-shifter is designed in 28nm CMOS process and simulated using Synopsys tools.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125302377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TE-surface vaves exitation as an instrument for control of the template relief te -面阀的抽采是控制模板溢流的一种工具
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939733
Y. Barabash, D. Grynko, Yurii Demydenko, V. Lozovski
{"title":"TE-surface vaves exitation as an instrument for control of the template relief","authors":"Y. Barabash, D. Grynko, Yurii Demydenko, V. Lozovski","doi":"10.1109/ELNANO.2017.7939733","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939733","url":null,"abstract":"The model for the optical response of the template with sinusoidal relief based on a self-consistent analytical approach is proposed. The dispersion properties of evanescent TE-polarized surface waves under Kretchman configuration is studied theoretically in the frame of the effective susceptibility concept. An influence relief parameters on dispersion spectrum of the TE waves is investigated.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"42 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120983002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analitical and numerical simulation of platelets in microchannels and their stress history 血小板在微通道中的解析和数值模拟及其应力历史
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939763
G. Fiore, A. Dimasi, M. Rasponi, A. Redaelli, I. Nesteruk
{"title":"Analitical and numerical simulation of platelets in microchannels and their stress history","authors":"G. Fiore, A. Dimasi, M. Rasponi, A. Redaelli, I. Nesteruk","doi":"10.1109/ELNANO.2017.7939763","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939763","url":null,"abstract":"Microfluidic systems are emerging as potential novel flow-based assays for monitoring platelet response under controlled shear stress conditions. Current approaches for microfluidic channel design are currently based on computing basic fluid dynamic quantities (e.g. wall shear stress) from simplified formulas. However, accurate designing approaches should take into account the variability of shear stress and related physical quantities experienced by a population of platelets flowing in a channel. 3D computational fluid dynamic (CFD) models could provide accurate estimation of distributions of shear stress and related quantities in a channel, although requiring iterative and computationally demanding analyses. Thus, approximated analytical and semi-analytical models may be used to allow a fast preliminary dimensioning phase of microfluidic channels. In this work, we present the formulation of analytical models able to describe statistical distributions of shear stress and related physical quantities among a population of platelets flowing in a microfluidic channel. We also evaluate the accuracy of the models by comparing them to 3D multiphase CFD analyses of straight microfluidic channels with flowing platelets. Two analytical models were proposed based on two different approximations: a parallel plate model and a circular channel model. Good agreement was found for both models in terms of cumulative distributions of shear stress, stress accumulation and residence time among a population of platelets. In terms of probability density functions, accuracy is dependent on the aspect ratio of the channel considered. Analytical models described in this study can be also used to solve the problem of shaping a microfluidic channel so that platelets flowing therein are subjected to specific and more complex shear stress patterns with respect to time, thus providing a useful tool for the pre-dimensioning phase of microfluidic channels for controlled and dynamic shear stress exposure of platelets.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117037572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-thin silicon substrates for nanostructured solar cells 纳米结构太阳能电池用超薄硅衬底
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939753
V. Koval, A. Ivashchuk, Y. Yakymenko, M. Dusheyko, M. Fadieiev, V. Matkivskyi
{"title":"Ultra-thin silicon substrates for nanostructured solar cells","authors":"V. Koval, A. Ivashchuk, Y. Yakymenko, M. Dusheyko, M. Fadieiev, V. Matkivskyi","doi":"10.1109/ELNANO.2017.7939753","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939753","url":null,"abstract":"Textured ultra-thin silicon wafers were obtained by means of chemical etching in potassium hydroxide solution. The surface morphology and roughness of ultra-thin silicon wafers were investigated depend on their thickness, doping level and texturing. Based on thinned silicon substrates the heterojunction solar cells were produced. It was determined clear dependence of photovoltaic properties on surface morphology.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125778432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Frequency magnetic transducers on base of bipolar transistors structure 基于双极晶体管结构的频率磁换能器
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939738
A. Osadchuk, V. Osadchuk
{"title":"Frequency magnetic transducers on base of bipolar transistors structure","authors":"A. Osadchuk, V. Osadchuk","doi":"10.1109/ELNANO.2017.7939738","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939738","url":null,"abstract":"In this paper we propose a new method for constructing the magnetic field of frequency transducers based on magnetically effect in bipolar transistors. Circuits of the magnetic field of frequency transducers on the single and the two-collectors bipolar transistors have been offered, which sensitivity is here from 0.5 to 7 kHz/mT.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126857321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Phase composition, structure and magnetic properties of the ultrafine cobalt particles synthesized by spark erosion method 相组成、结构和超细钴磁性粒子合成了电火花腐蚀方法
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939712
D. Orgunova, A. Gilchuk, A. Perekos
{"title":"Phase composition, structure and magnetic properties of the ultrafine cobalt particles synthesized by spark erosion method","authors":"D. Orgunova, A. Gilchuk, A. Perekos","doi":"10.1109/ELNANO.2017.7939712","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939712","url":null,"abstract":"Ferromagnetic nanoscale Co particles in a nonferromagnetic matrix can be used as materials for spintronics and a magnetoelectronics engineering. Highly dispersive Co particles were produced by spark erosion method in distilled water, ethanol and toluene. The phase composition, crystalline structure and magnetic properties were studied. The analysis of the phase composition of spark eroded powders confirms contents alpha-Co and beta-Co phases. The biggest fraction of the alpha-phase was observed in the powder produced in water (approx. 5.3 pct.), while the smallest fraction (approx. 4.3 pct.) — in toluene. A fraction of the alpha-Co in the all studied powders increases as the annealing temperature grows. The spatial dimensions of the alpha-Co crystal phases are typically much smaller compared to beta-Cos. The intensity of a martensitic transformation is low in the studied interval of temperatures and small fraction of alpha-Co can be bound to the presence of large-size particles at samples for which a martensitic transformation is possible.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130849796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multifactor initial placement of IC cells 集成电路细胞的多因素初始放置
2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) Pub Date : 2017-04-01 DOI: 10.1109/ELNANO.2017.7939726
V. Melikyan, A. Harutyunyan, N. S. Vagharshakyan, H. Harutyunyan
{"title":"Multifactor initial placement of IC cells","authors":"V. Melikyan, A. Harutyunyan, N. S. Vagharshakyan, H. Harutyunyan","doi":"10.1109/ELNANO.2017.7939726","DOIUrl":"https://doi.org/10.1109/ELNANO.2017.7939726","url":null,"abstract":"A method for multifactorial placement of logical cells of integrated circuits (ICs) is proposed that provides joint consideration of total length of interconnection, circuit performance and topological uniformity of thermal field on IC surface. The mathematical form of the proposed criterion is an additive function of particular single-factor criteria, which allows the use of sequential algorithms for placement of IC cells.","PeriodicalId":333746,"journal":{"name":"2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132967629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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