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High-k Materials in Multi-Gate FET Devices最新文献

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Trap Charges in High-k and Stacked Dielectric 高k和堆叠介质中的陷阱电荷
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-4
A. S. Lenka, P. Sahu
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引用次数: 0
Novel Architecture in Gate-All-Around (GAA) MOSFET with High-k Dielectric for Biomolecule Detection 用于生物分子检测的高k介电栅极全能(GAA) MOSFET新结构
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-8
Krutideepa Bhol, B. Jena, U. Nanda, Shubham Tayal, Amit K. Jain
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引用次数: 0
Impact of High-k Dielectric on the Gate-Induced Drain Leakage of Multi-Gate FETs 高k介电介质对多栅极场效应管栅极漏极的影响
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-5
Varshini K. Amirtha, Shubham Sahay
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引用次数: 0
Asymmetric Junctionless Transistor 非对称无结晶体管
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-9
Gaurav Saini, T. Sasamal
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引用次数: 0
Introduction to Multi-Gate FET Devices 多栅极FET器件简介
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-1
T. S. Arulananth, S. Prasad, K. S. Rao
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引用次数: 0
Advanced FET Design Using High-k Gate Dielectric and Characterization for Low-Power VLSI 基于高k栅极介质的先进FET设计及低功耗VLSI特性研究
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-6
P. Vimala, T. Samuel
{"title":"Advanced FET Design Using High-k Gate Dielectric and Characterization for Low-Power VLSI","authors":"P. Vimala, T. Samuel","doi":"10.1201/9781003121589-6","DOIUrl":"https://doi.org/10.1201/9781003121589-6","url":null,"abstract":"","PeriodicalId":331396,"journal":{"name":"High-k Materials in Multi-Gate FET Devices","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124152931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD 应用高k介电介质的栅极堆叠DG MOSFET的可视化TCAD仿真与分析
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-7
N. Yadav, Sunil Jadav, Gaurav Saini
{"title":"Simulation and Analysis of Gate Stack DG MOSFET with Application of High-k Dielectric Using Visual TCAD","authors":"N. Yadav, Sunil Jadav, Gaurav Saini","doi":"10.1201/9781003121589-7","DOIUrl":"https://doi.org/10.1201/9781003121589-7","url":null,"abstract":"","PeriodicalId":331396,"journal":{"name":"High-k Materials in Multi-Gate FET Devices","volume":"347 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134478202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performability Analysis of High-k Dielectric–Based Advanced MOSFET in Lower Technology Nodes 基于高介电介质的先进MOSFET低技术节点性能分析
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-10
Manoj Angara, B. Jena, Ayodeji Olalekan Salau
{"title":"Performability Analysis of High-k Dielectric–Based Advanced MOSFET in Lower Technology Nodes","authors":"Manoj Angara, B. Jena, Ayodeji Olalekan Salau","doi":"10.1201/9781003121589-10","DOIUrl":"https://doi.org/10.1201/9781003121589-10","url":null,"abstract":"","PeriodicalId":331396,"journal":{"name":"High-k Materials in Multi-Gate FET Devices","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114829013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of High-k Material in Gate Engineering and in Multi-Gate Field Effect Transistor Devices 高k材料在栅极工程和多栅极场效应晶体管器件中的影响
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-3
C. Usha, P. Vimala
{"title":"Influence of High-k Material in Gate Engineering and in Multi-Gate Field Effect Transistor Devices","authors":"C. Usha, P. Vimala","doi":"10.1201/9781003121589-3","DOIUrl":"https://doi.org/10.1201/9781003121589-3","url":null,"abstract":"","PeriodicalId":331396,"journal":{"name":"High-k Materials in Multi-Gate FET Devices","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115725739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-k Gate Dielectrics and Metal Gate Stack Technology for Advance Semiconductor Devices 用于先进半导体器件的高k栅极电介质和金属栅极堆叠技术
High-k Materials in Multi-Gate FET Devices Pub Date : 2021-07-30 DOI: 10.1201/9781003121589-2
V. Goyal, Shubham Tayal, S. Meena, Ravi Gupta, S. Bhattacharya
{"title":"High-k Gate Dielectrics and Metal Gate Stack Technology for Advance Semiconductor Devices","authors":"V. Goyal, Shubham Tayal, S. Meena, Ravi Gupta, S. Bhattacharya","doi":"10.1201/9781003121589-2","DOIUrl":"https://doi.org/10.1201/9781003121589-2","url":null,"abstract":"","PeriodicalId":331396,"journal":{"name":"High-k Materials in Multi-Gate FET Devices","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116954062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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